IP Library › Granted Patent US 12,581,796
Granted Patent B2
US 12,581,796 · App. 17/559,054 · Granted Mar 17, 2026

Light-emitting device, light-emitting apparatus, electronic device, and lighting device

Inventors: Satoshi Seo (Kanagawa, JP); Tsunenori Suzuki (Kanagawa, JP); Nobuharu Ohsawa (Kanagawa, JP)
Assignee: Semiconductor Energy Laboratory Co., Ltd.
H10K50/171H10K50/131H10K50/16H10K50/17H10K59/80521H10K59/12
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Quick Facts
Patent No.
US 12,581,796
App. No.
17/559,054
Filed
Dec 22, 2021
Granted
Mar 17, 2026
Kind
B2
Art Unit
2893
USPC
257/40
Abstract

A novel light-emitting device that is highly convenient, useful, or reliable is provided. The light-emitting device includes a second electrode over a first electrode with an EL layer therebetween. The EL layer includes at least a light-emitting layer, an electron-transport layer, and an electron-injection layer. The electron-transport layer is positioned over the light-emitting layer. An insulating layer is in contact with side surfaces of the light-emitting layer and the electron-transport layer. The electron-injection layer is positioned over the electron-transport layer. The electron-injection layer is in contact with the electron-transport layer and the insulating layer.

Claims (84)

1 . A light-emitting device comprising:

a second electrode over a first electrode with an EL layer therebetween,

wherein the EL layer comprises a light-emitting layer, an electron-transport layer, and an electron-injection layer,

wherein the electron-transport layer is over the light-emitting layer,

wherein a side surface of an insulating layer is in contact with the light-emitting layer and the electron-transport layer,

wherein the electron-injection layer is over the electron-transport layer and the insulating layer, and

wherein the electron-injection layer is in contact with the electron-transport layer and the insulating layer.

2 . The light-emitting device according to claim 1 , wherein the electron-injection layer comprises a composite material in which an organic compound and an electron donor are mixed, or a composite material in which an organic compound and any of an alkali metal, an alkaline earth metal, a rare earth metal, and a metal that belongs to Group 5, Group 7, Group 9, Group 11, or Group 13 in the periodic table are mixed.

3 . A light-emitting apparatus comprising:

the light-emitting device according to claim 1 ; and

at least one of a transistor and a substrate.

4 . An electronic device comprising:

the light-emitting apparatus according to claim 3 ; and

at least one of a sensor, an operation button, a speaker, and a microphone.

5 . A lighting device comprising:

the light-emitting apparatus according to claim 3 ; and

a housing.

6 . A light-emitting device according to claim 1 , wherein the insulating layer comprises at least one of aluminum oxide, magnesium oxide, hafnium oxide, gallium oxide, indium gallium zinc oxide, silicon nitride, and silicon nitride oxide.

7 . A light-emitting device comprising:

a second electrode over a first electrode with an EL layer therebetween,

wherein the EL layer comprises a hole-injection layer, a light-emitting layer, an electron-transport layer, and an electron-injection layer,

wherein the hole-injection layer is over the first electrode,

wherein the light-emitting layer is over the hole-injection layer,

wherein the electron-transport layer is over the light-emitting layer,

wherein a side surface of an insulating layer is in contact with the hole-injection layer, the light-emitting layer, and the electron-transport layer,

wherein the electron-injection layer is over the electron-transport layer and the insulating layer, and

wherein the electron-injection layer is in contact with the electron-transport layer and the insulating layer.

8 . The light-emitting device according to claim 7 , wherein the electron-injection layer comprises a composite material in which an organic compound and an electron donor are mixed, or a composite material in which an organic compound and any of an alkali metal, an alkaline earth metal, a rare earth metal, and a metal that belongs to Group 5, Group 7, Group 9, Group 11, or Group 13 in the periodic table are mixed.

9 . A light-emitting apparatus comprising:

the light-emitting device according to claim 7 ; and

at least one of a transistor and a substrate.

10 . An electronic device comprising:

the light-emitting apparatus according to claim 9 ; and

at least one of a sensor, an operation button, a speaker, and a microphone.

11 . A lighting device comprising:

the light-emitting apparatus according to claim 9 ; and

a housing.

12 . A light-emitting device according to claim 7 , wherein the insulating layer comprises at least one of aluminum oxide, magnesium oxide, hafnium oxide, gallium oxide, indium gallium zinc oxide, silicon nitride, and silicon nitride oxide.

13 . A light-emitting apparatus comprising a first light-emitting device and a second light-emitting device adjacent to each other,

wherein the first light-emitting device comprises a second electrode over a first electrode with a first EL layer therebetween,

wherein the first EL layer comprises a first light-emitting layer, a first electron-transport layer, and an electron-injection layer,

wherein the first electron-transport layer is over the first light-emitting layer,

wherein a first insulating layer is in contact with side surfaces of the first light-emitting layer and the first electron-transport layer,

wherein the electron-injection layer is over the first electron-transport layer,

wherein the second light-emitting device comprises the second electrode over a third electrode with a second EL layer therebetween,

wherein the second EL layer comprises a second light-emitting layer, a second electron-transport layer, and the electron-injection layer,

wherein the second electron-transport layer is over the second light-emitting layer,

wherein a second insulating layer is in contact with side surfaces of the second light-emitting layer and the second electron-transport layer,

wherein the electron-injection layer is over the first electron-transport layer and the second electron-transport layer, and

wherein the electron-injection layer is in contact with the first electron-transport layer, the second electron-transport layer, the first insulating layer, and the second insulating layer.

14 . The light-emitting apparatus according to claim 13 , wherein the second electrode is positioned on the side surfaces of the first light-emitting layer and the second light-emitting layer with the electron-injection layer therebetween.

15 . The light-emitting apparatus according to claim 13 , wherein the second electrode is positioned on the side surfaces of the first electron-transport layer, the second electron-transport layer, the first light-emitting layer, and the second light-emitting layer with the electron-injection layer therebetween.

16 . The light-emitting apparatus according to claim 13 , wherein the electron-injection layer comprises a composite material in which an organic compound and an electron donor are mixed, or a composite material in which an organic compound and any of an alkali metal, an alkaline earth metal, a rare earth metal, and a metal that belongs to Group 5, Group 7, Group 9, Group 11, or Group 13 in the periodic table are mixed.

17 . An electronic device comprising:

the light-emitting apparatus according to claim 13 ; and

at least one of a sensor, an operation button, a speaker, and a microphone.

18 . A lighting device comprising:

the light-emitting apparatus according to claim 13 ; and

a housing.

19 . A light-emitting apparatus comprising a first light-emitting device and a second light-emitting device adjacent to each other,

wherein the first light-emitting device comprises a second electrode over a first electrode with a first EL layer therebetween,

wherein the first EL layer comprises a first hole-injection layer, a first light-emitting layer, a first electron-transport layer, and an electron-injection layer,

wherein the first hole-injection layer is over the first electrode,

wherein the first light-emitting layer is over the first hole-injection layer,

wherein the first electron-transport layer is over the first light-emitting layer,

wherein a first insulating layer is in contact with side surfaces of the first hole-injection layer, the first light-emitting layer, and the first electron-transport layer,

wherein the electron-injection layer is over the first electron-transport layer,

wherein the second light-emitting device comprises the second electrode over a third electrode with a second EL layer therebetween,

wherein the second EL layer comprises a second hole-injection layer, a second light-emitting layer, a second electron-transport layer, and the electron-injection layer,

wherein the second hole-injection layer is over the third electrode,

wherein the second light-emitting layer is over the second hole-injection layer,

wherein the second electron-transport layer is over the second light-emitting layer,

wherein a second insulating layer is in contact with side surfaces of the second hole-injection layer, the second light-emitting layer, and the second electron-transport layer,

wherein the electron-injection layer is over the first electron-transport layer and the second electron-transport layer, and

wherein the electron-injection layer is in contact with the first electron-transport layer, the second electron-transport layer, the first insulating layer, and the second insulating layer.

20 . The light-emitting apparatus according to claim 19 , wherein the second electrode is positioned on the side surfaces of the first light-emitting layer and the second light-emitting layer with the electron-injection layer therebetween.

21 . The light-emitting apparatus according to claim 19 , wherein the second electrode is positioned on the side surfaces of the first electron-transport layer, the second electron-transport layer, the first light-emitting layer, and the second light-emitting layer with the electron-injection layer therebetween.

22 . The light-emitting apparatus according to claim 19 , wherein the electron-injection layer comprises a composite material in which an organic compound and an electron donor are mixed, or a composite material in which an organic compound and any of an alkali metal, an alkaline earth metal, a rare earth metal, and a metal that belongs to Group 5, Group 7, Group 9, Group 11, or Group 13 in the periodic table are mixed.

23 . An electronic device comprising:

the light-emitting apparatus according to claim 19 ; and

at least one of a sensor, an operation button, a speaker, and a microphone.

24 . A lighting device comprising:

the light-emitting apparatus according to claim 19 ; and

a housing.

Assignments (1)
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Dec 22, 2021
From: SEO, SATOSHI; SUZUKI, TSUNENORI; OHSAWA, NOBUHARU
To: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.
Reel/Frame 058462/0094 →
Priority Claims (2)
JP 2020-219886 · Dec 29, 2020 · national
JP 2021-188595 · Nov 19, 2021 · national
Continuity (1)
Related Publication 20220209162A1 · Jun 30, 2022
References Cited (88)
US 5953985A · Kobayashi · 1999 [cited by applicant]
US 6120338A · Hirano et al. · 2000 [cited by applicant]
US 8877532B2 · Hiroki. et al. · 2014 [cited by applicant]
US 8975811B2 · Yoon · 2015 [cited by applicant]
US 8993127B2 · Osaka et al. · 2015 [cited by applicant]
US 9564597B2 · Osaka et al. · 2017 [cited by applicant]
US 9755162B2 · Jiao · 2017 [cited by applicant]
US 10153449B2 · Seo et al. · 2018 [cited by applicant]
US 11404656B2 · Ohsawa et al. · 2022 [cited by applicant]
US 11678550B2 · Kato · 2023 [cited by applicant]
US 11889739B2 · Wei et al. · 2024 [cited by applicant]
US 12096671B2 · Kato · 2024 [cited by applicant]
US 20020072139A1 · Kashiwabara · 2002 [cited by applicant]
US 20070123133A1 · Winters · 2007 [cited by examiner]
US 20070129545A1 · Inoue · 2007 [cited by examiner]
US 20110108817A1 · Nishi. et al. · 2011 [cited by applicant]
US 20110148290A1 · Oota · 2011 [cited by applicant]
US 20120252149A1 · Hiroki et al. · 2012 [cited by applicant]
US 20120256204A1 · Yoshizumi et al. · 2012 [cited by applicant]
US 20120273804A1 · Hatano · 2012 [cited by applicant]
US 20120276484A1 · Izumi et al. · 2012 [cited by applicant]
US 20130057143A1 · Sugimoto et al. · 2013 [cited by applicant]
US 20130084531A1 · Hamaguchi et al. · 2013 [cited by applicant]
US 20130084664A1 · Yoshitoku et al. · 2013 [cited by applicant]
US 20130084666A1 · Oshige · 2013 [cited by applicant]
US 20130280839A1 · Sonoda et al. · 2013 [cited by applicant]
US 20130295705A1 · Sonoda et al. · 2013 [cited by applicant]
US 20140004640A1 · Hamaguchi et al. · 2014 [cited by applicant]
US 20140004642A1 · Otsuka et al. · 2014 [cited by applicant]
US 20150060826A1 · Matsumoto et al. · 2015 [cited by applicant]
US 20150069360A1 · Sato · 2015 [cited by applicant]
US 20150076476A1 · Odaka et al. · 2015 [cited by applicant]
US 20160172595A1 · Malinowski et al. · 2016 [cited by applicant]
US 20160254474A1 · Zou · 2016 [cited by examiner]
US 20160315133A1 · Sato · 2016 [cited by applicant]
US 20160351833A1 · Hosoumi et al. · 2016 [cited by applicant]
US 20170141167A1 · Naganuma · 2017 [cited by applicant]
US 20170256754A1 · Defranco et al. · 2017 [cited by applicant]
US 20170317316A1 · Yang · 2017 [cited by examiner]
US 20180190908A1 · Ke et al. · 2018 [cited by applicant]
US 20190115553A1 · Seo et al. · 2019 [cited by applicant]
US 20200203662A1 · Mollard et al. · 2020 [cited by applicant]
US 20200321541A1 · Hosoumi et al. · 2020 [cited by applicant]
US 20210408217A1 · Miao · 2021 [cited by examiner]
US 20220407027A1 · Ohsawa et al. · 2022 [cited by applicant]
US 20250008802A1 · Kato. · 2025 [cited by applicant]
CN 108539028A · 2018 [cited by applicant]
CN 110828683A · 2020 [cited by applicant]
EP 2428512A · 2012 [cited by applicant]
EP 3001473A · 2016 [cited by applicant]
JP 2000036385A · 2000 [cited by applicant]
JP 2003059663A · 2003 [cited by applicant]
JP 2003100457A · 2003 [cited by applicant]
JP 2004171951A · 2004 [cited by applicant]
JP 2008098106A · 2008 [cited by applicant]
JP 2008147072A · 2008 [cited by applicant]
JP 2008251270A · 2008 [cited by applicant]
JP 2012160473A · 2012 [cited by applicant]
JP 2012216501A · 2012 [cited by applicant]
JP 2014120218A · 2014 [cited by applicant]
JP 2014135251A · 2014 [cited by applicant]
JP 2014232568A · 2014 [cited by applicant]
JP 2015115178A · 2015 [cited by applicant]
JP 2016082239A · 2016 [cited by applicant]
JP 2016518729 · 2016 [cited by applicant]
JP 2016197494A · 2016 [cited by applicant]
JP 2016225619A · 2016 [cited by applicant]
JP 2018181916A · 2018 [cited by applicant]
JP 2019179696A · 2019 [cited by applicant]
JP 2020043181A · 2020 [cited by applicant]
JP 2020160305A · 2020 [cited by applicant]
KR 20140139864A · 2014 [cited by applicant]
TW 201627298 · 2016 [cited by applicant]
WO WO2012011471 · 2012 [cited by applicant]
WO WO2019123190 · 2019 [cited by applicant]
WO WO2020004086 · 2020 [cited by applicant]
Zakhidov.A et al., “Orthogonal processing: A new strategy for organic electronics”, Chem. Sci. (Chemical Science), Apr. 7, 2011, vol. 2, No. 6, pp. 1178-1182. [cited by applicant]
Malinowski.P et al., “High resolution photolithography for direct view active matrix organic light-emitting diode augmented reality displays”, J. Soc. Inf. Display (Journal of the Society for Information Display), Apr. … [cited by applicant]
Malinowski.P et al., “Photolithographic patterning of organic photodetectors with a non-fluorinated photoresist system”, Organic Electronics, Jul. 12, 2014, vol. 15, No. 10, pp. 2355-2359. [cited by applicant]
Malinowski.P et al., “Multicolor 1250 ppi OLED Arrays Patterened by Photolithography”, SID Digest '16 : SID International Symposium Digest of Technical Papers, May 22, 2016, vol. 47, No. 1, pp. 1009-1012. [cited by applicant]
Papadopoulos.N et al., “AMOLED Displays with In-Pixel Photodetector”, Liquid Crystals and Display Technology, Jul. 9, 2020, pp. 1-19. [cited by applicant]
Ke.T et al., “Technology Developments in High-Resolution FMM-free OLED and BEOL IGZO TFTs for Power-Efficient Microdisplays”, SID Digest '21 : SID International Symposium Digest of Technical Papers, May 1, 2021, vol. 52… [cited by applicant]
Malinowski.P et al., “Integration of additional functionalities into the frontplane of AMOLED displays”, SID Digest '20 : SID International Symposium Digest of Technical Papers, Aug. 1, 2020, vol. 51, No. 1, pp. 646-649. [cited by applicant]
Malinowski.P et al., “Organic photolithography for displays with integrated fingerprint scanner”, SID Digest '19 : SID International Symposium Digest of Technical Papers, May 29, 2019, vol. 50, No. 1, pp. 1007-1010. [cited by applicant]
Ke.T et al., “Island and Hole Fabrication on OLED Stack for High-Resolution Sensor in Display Application”, IDW '20 : Proceedings of the 27th International Display Workshops, Dec. 9, 2020, vol. 27, pp. 902-905. [cited by applicant]
Gather.M et al., “Solution-Processed Full-Color Polymer-OLED Displays Fabricated by Direct Photolithography”, SID Digest '06 : SID International Symposium Digest of Technical Papers, Jun. 1, 2006, vol. 37, No. 1, pp. 90… [cited by applicant]
Malinowski.P et al., “Photolithography as Enabler of AMOLED Displays Beyond 1000 ppi”, SID Digest '17 : SID International Symposium Digest of Technical Papers, May 1, 2017, vol. 48, No. 1, pp. 623-626. [cited by applicant]
Taiwanese Office Action (Application No. 110148713) Dated Sep. 10, 2025. [cited by applicant]