Anode structures having a multiple supplemental layers
An anode for an energy storage device is provided that includes a current collector having an electrically conductive layer, a plurality of lithium storage filamentary structures in contact with the electrically conductive layer. For each lithium storage filamentary structure of the plurality of lithium storage filamentary structures, there is a first supplemental layer overlaying at least a portion of the respective filamentary structure, the first supplemental layer including silicon nitride or a first metal compound. There is further a second supplemental layer overlaying at least a portion of the first supplemental layer, the second supplemental layer having a composition different from the first supplemental layer and comprising silicon nitride or a second metal compound.
1. An anode for an energy storage device comprising:
a current collector comprising an electrically conductive layer;
a plurality of lithium storage filamentary structures in contact with the electrically conductive layer; and
a plurality of supplemental layers for each lithium storage filamentary structure of the plurality of lithium storage filamentary structures, wherein:
a first supplemental layer overlays at least a portion of the respective filamentary structure, the first supplemental layer comprising silicon nitride or a first metal compound, wherein the first metal compound comprises a metal oxide, a metal nitride, a metal oxynitride, a lithium-containing material, or a metalcone,
a second supplemental layer overlays at least a portion of the first supplemental layer, the second supplemental layer having a composition different from the first supplemental layer and comprising silicon nitride or a second metal compound, wherein the second metal compound comprises a metal oxide, a metal nitride, a metal oxynitride, a lithium-containing material, or a metalcone, and
a third supplemental layer overlaying at least a portion of the second supplemental layer, the third supplemental layer having a composition different from the second supplemental layer and comprising silicon nitride or a third metal compound.
2. The anode of claim 1 , wherein the first supplemental layer comprises the first metal compound.
3. The anode of claim 2 , wherein the first metal compound comprises a transition metal.
4. The anode of claim 1 , wherein the second supplemental layer comprises the second metal compound.
5. The anode of claim 4 , wherein the second metal compound comprises a transition metal.
6. The anode of claim 1 , wherein the first supplemental layer, the second supplemental layer, or both the first supplemental layer and the second supplemental layer comprises an independently selected metal oxide.
7. The anode of claim 6 , wherein the metal oxide comprises a transition metal.
8. The anode of claim 6 , wherein the metal oxide comprises an oxide of aluminum, titanium, or vanadium.
9. The anode of claim 1 , wherein the first supplemental layer or the second supplemental layer, or both the first supplemental layer and the second supplemental layer comprises an independently selected metalcone.
10. The anode of claim 9 , wherein the metalcone comprises a transition metal.
11. The anode of claim 9 , wherein the metalcone comprises zinc, aluminum, titanium, or zirconium.
12. The anode of claim 1 , wherein the first supplemental layer comprises silicon nitride and the second supplemental layer comprises the second metal compound.
13. The anode of claim 1 , wherein the first supplemental layer comprises a metalcone and the second supplemental layer comprises a metal oxide.
14. The anode of claim 1 , wherein the composition of the third supplemental layer is substantially the same as the composition of the first supplemental layer.
15. The anode of claim 1 , wherein the plurality of supplemental layers comprises a fourth supplemental layer overlaying at least a portion of the third supplemental layer, the fourth supplemental layer having a composition different from the third supplemental layer and comprising silicon nitride or a fourth metal compound.
16. The anode of claim 15 , wherein the composition of the fourth supplemental layer is substantially the same as the composition of the second supplemental layer.
17. The anode of claim 16 , wherein:
the first supplemental layer and the third supplemental layer comprise a first metal oxide, and
the second supplemental layer and the fourth supplemental layer comprise a second metal oxide.
18. The anode of claim 1 , a lithium ion-conducting organic material capping layer provided over a distal supplemental layer of the plurality of supplemental layers, wherein the distal supplemental layer is disposed farthest from the electrically conductive layer.
19. The anode of claim 1 , wherein each lithium storage filamentary structure of the plurality of lithium storage filamentary structures comprises silicon.
20. The anode of claim 1 , wherein the plurality of lithium storage filamentary structures (i) has an average height in a range of 0 . 2 um to 100 um, (ii) has an average maximum width in a range of 0.1 μm to 10 μm, and (iii) each has an aspect ratio of at least 2:1.
21. The anode of claim 1 , wherein the first supplemental layer is an oxide of titanium, and the second supplemental layer is an oxide of aluminum.