Semiconductor structure and method of forming the same
A semiconductor structure and method of forming the same are provided. The semiconductor structure includes a circuit structure, an interlayer structure and a memory structure. The circuit structure includes a substrate having semiconductor devices formed thereon; a dielectric structure disposed over the semiconductor devices; and an interconnect layer embedded in the dielectric structure and connected to the semiconductor devices. The interlayer structure is disposed over the circuit structure. The memory structure is disposed over the interlayer structure and physically separated from the circuit structure by the interlayer structure.
1. A semiconductor structure, comprising:
a logic circuit structure;
an interlayer structure, disposed on the logic circuit structure; and
a memory structure, disposed on the interlayer structure, wherein the memory structure comprises:
a word line, extending along a first direction parallel with a top surface of the interlayer structure;
a pair of source line and bit line, extending along a second direction perpendicular to the first direction and perpendicular to the top surface of the interlayer structure; and
an isolation structure, disposed adjacent to the pair of source line and bit line for isolating adjacent memory cells;
a first conductive contact, landing on the word line;
a second conductive contact, penetrating through the isolation structure and the interlayer structure and landing on a conductive feature of the logic circuit structure; and
a conductive line, electrically connected to the first conductive contact and the second conductive contact.
2. The semiconductor structure of claim 1 , wherein the memory structure further comprises:
a channel layer, disposed between the word line and the pair of source line and bit line; and
a data storage layer, disposed between the word line and the channel layer, and surrounding sidewalls and a bottom surface of the isolation structure,
wherein the second conductive contact further penetrates through the data storage layer, and at least a portion of the interlayer structure is disposed between the data storage layer and the logic circuit structure.
3. The semiconductor structure of claim 1 , wherein the memory structure comprises a stack structure comprising a plurality of dielectric layers and a plurality of word lines alternately stacked on the interlayer structure, and a bottommost dielectric layer of the plurality of dielectric layers is in contact with the interlayer structure.
4. The semiconductor structure of claim 3 , wherein bottom surfaces of the pair of source line and bit line are located at a level height vertically between a bottom surface and a top surface of the interlayer structure.
5. The semiconductor structure of claim 1 , wherein the interlayer structure is a multilayer structure comprises a plurality of interlayers having different materials.
6. The semiconductor structure of claim 5 , wherein the pair of source line and bit line further extend into at least one of the plurality of interlayers.
7. A semiconductor structure, comprising:
a logic circuit structure, including semiconductor devices and a conductive feature electrically connected with the semiconductor devices formed therein;
an interlayer structure, disposed on the logic circuit structure; and
a memory structure disposed on the interlayer structure, wherein the interlayer structure is interposed between the memory structure and the logic circuit substrate, and the memory structure comprises:
a word line, extending along a first direction parallel with a top surface of the interlayer structure;
a pair of source line and bit line, extending along a second direction perpendicular to the first direction and perpendicular to the top surface of the interlayer structure; and
an isolation structure, disposed adjacent to the pair of source line and bit line for isolating adjacent memory cells;
a first conductive contact, landing on the word line;
a second conductive contact, penetrating through the isolation structure and the interlayer structure and landing on the conductive feature of the logic circuit structure; and
a conductive line, electrically connected to the first conductive contact and the second conductive contact.
8. The semiconductor structure of claim 7 , wherein the memory structure further comprises:
a channel layer, disposed between the word line and the pair of source line and bit line; and
a data storage layer, disposed between the word line and the channel layer, and surrounding sidewalls and a bottom surface of the isolation structure,
wherein the second conductive contact further penetrates through the data storage layer, and at least a portion of the interlayer structure is disposed between the data storage layer and the circuit structure so that the data storage layer is separated from the logic circuit structure by the interlayer structure.
9. The semiconductor structure of claim 7 , wherein the memory structure comprises a stack structure comprising alternately stacked dielectric layers and word lines on the interlayer structure, bottom surfaces of the pair of source line and bit line are higher than a bottom surface of the bottommost dielectric layer.
10. The semiconductor structure of claim 7 , wherein the memory structure comprises a stack structure comprising alternately stacked dielectric layers and word lines on the interlayer structure, bottom surfaces of the pair of source line and bit line are substantially levelled with a bottom surface of the bottommost dielectric layer.
11. The semiconductor structure of claim 7 , wherein the memory structure comprises a stack structure comprising alternately stacked dielectric layers and word lines on the interlayer structure, bottom surfaces of the pair of source line and bit line are lower than a bottom surface of the bottommost dielectric layer.