Magnetic tunneling junction device, memory device including the same, and method of manufacturing the magnetic tunneling junction device
Provided are magnetic tunneling junction devices, memory devices including the magnetic tunneling junction devices, and methods of manufacturing the magnetic tunneling junction devices. The magnetic tunneling junction device includes a first magnetic layer; a second magnetic layer disposed to face the first magnetic layer; and a first oxide layer disposed between the first magnetic layer and the second magnetic layer and including a metal oxide, wherein the metal oxide of the first oxide layer has a stoichiometrically oxygen-deficient composition, and wherein the second magnetic layer includes a magnetic material doped with a metal element.
1 . A magnetic tunneling junction device comprising:
a first magnetic layer;
a second magnetic layer facing the first magnetic layer; and
a first oxide layer between the first magnetic layer and the second magnetic layer and comprising a metal oxide,
wherein the metal oxide of the first oxide layer has a stoichiometrically oxygen-deficient composition, and
the second magnetic layer comprises a magnetic material doped with a metal element,
wherein the metal oxide includes MgO, a proportion of magnesium (Mg) in the metal oxide is greater than 50 at % and a proportion of oxygen (O) in the metal oxide is less than 50 at %,
an oxygen affinity of the metal element doped in the second magnetic layer is greater than an oxygen affinity of the magnetic material of the second magnetic layer,
the magnetic material of the second magnetic layer comprises at least one of Fe, Co, Ni, Mn, a Fe-containing alloy, a Co-containing alloy, a Ni-containing alloy, a Mn-containing alloy, and a Heusler alloy, and
the metal element doped in the second magnetic layer comprises at least one of Ca, Sc, Y, Mg, Sr, Ba, V, Zn, Nb, Al, Cr, Li, Cd, Pb, In, Ga, and Ta;
wherein the first oxide layer comprises a first region adjacent to the first magnetic layer and a second region adjacent to the second magnetic layer, and a proportion of a first element in the second region is greater than a proportion of the first element in the first region, the first element being oxygen or nitrogen diffused to the first oxide layer.
2 . The magnetic tunneling junction device of claim 1 ,
wherein the first oxide layer further comprises a metal layer between the first region and the second region.
3 . The magnetic tunneling junction device of claim 2 ,
wherein a thickness of the second region is less than a thickness of the first region.
4 . The magnetic tunneling junction device of claim 2 ,
wherein a thickness of the metal layer is about 0.2 nm to about 0.3 nm.
5 . The magnetic tunneling junction device of claim 2 ,
wherein a metal material of the metal layer is same as a metal material of the metal oxide of the first oxide layer.
6 . The magnetic tunneling junction device of claim 1 , further comprising:
a second oxide layer facing the first oxide layer with the second magnetic layer between the second oxide layer and the first oxide layer, the second oxide layer comprising a metal oxide.
7 . The magnetic tunneling junction device of claim 6 ,
wherein the metal oxide of the second oxide layer has a stoichiometrically oxygen-deficient composition.
8 . The magnetic tunneling junction device of claim 7 ,
wherein the second oxide layer comprises a first region disposed farther from the second magnetic layer and a second region adjacent to the second magnetic layer, and
a proportion of a first element in the second region is greater than a proportion of the first element in the first region, the first element being nitrogen or oxygen.
9 . The magnetic tunneling junction device of claim 8 ,
wherein the second oxide layer further comprises a metal layer between the first region and the second region.
10 . A magnetic tunneling junction device comprising:
a first magnetic layer;
a second magnetic layer facing the first magnetic layer; and
a first oxide layer between the first magnetic layer and the second magnetic layer and comprising a metal oxide,
wherein the first oxide layer comprises a first region adjacent to the first magnetic layer and a second region adjacent to the second magnetic layer, and
a proportion of a first element in the second region is greater than a proportion of the first element in the first region, the first element being oxygen or nitrogen diffused to the first oxide layer,
the metal oxide includes MgO, a proportion of magnesium (Mg) in the metal oxide is greater than 50 at % and a proportion of oxygen (O) in the metal oxide is less than 50 at %,
an oxygen affinity of the metal element doped in the second magnetic layer is greater than an oxygen affinity of a magnetic material of the second magnetic layer,
the magnetic material of the second magnetic layer comprises at least one of Fe, Co, Ni, Mn, a Fe-containing alloy, a Co-containing alloy, a Ni-containing alloy, a Mn-containing alloy, and a Heusler alloy, and
the metal element doped in the second magnetic layer comprises at least one of Ca, Sc, Y, Mg, Sr, Ba, V, Zn, Nb, Al, Cr, Li, Cd, Pb, In, Ga, and Ta.
11 . A nonvolatile memory device comprising:
the magnetic tunneling junction device of claim 10 ; and
a transistor connected to the magnetic tunneling junction device, the transistor configured to control the magnetic tunneling junction device.
12 . The nonvolatile memory device of claim 11 , wherein the magnetic tunneling junction device is connected to a drain of the transistor, and
the nonvolatile memory device further comprises:
a selection line connected to a source of the transistor; and
a word line connected to a gate of the transistor.
13 . An electronic system comprising:
the nonvolatile memory device of claim 11 ; and
a controller configured to control the nonvolatile memory device to perform at least one of a read operation, a write operation, or an erase operation.
14 . The electronic system of claim 13 , further comprising:
a processor configured to communicate with the controller, to instruct the controller to store data in the nonvolatile memory device.
15 . The magnetic tunneling junction device of claim 1 , wherein the first oxide layer has an oxygen-deficient composition compared to an inherent oxygen composition of an oxide material forming the first oxide layer.
16 . The magnetic tunneling junction device of claim 15 , wherein the proportion of magnesium (Mg) in the metal oxide is greater than 52 at %.
17 . The magnetic tunneling junction device of claim 16 , wherein the proportion of magnesium (Mg) in the metal oxide is less than 65 at %.
18 . The magnetic tunneling junction device of claim 15 , wherein the proportion of oxygen (O) in the metal oxide is less than 40 at %.
19 . The magnetic tunneling junction device of claim 18 , wherein the proportion of oxygen (O) in the metal oxide is greater than 35 at %.
20 . The magnetic tunneling junction device of claim 1 , wherein the first oxide layer has an oxygen-deficient composition compared to an inherent oxygen composition of an oxide material forming the first oxide layer.