Optoelectronic device
An optoelectronic device, in particular an at least semi-transparent pane for example for a vehicle, comprises: a cover layer, a carrier layer, an intermediate layer between the cover layer and the carrier layer, wherein at least one and preferably a plurality of optoelectronic light sources, in particular μLEDS, is arranged on at least one surface of the intermediate layer and/or is at least partially embedded in the intermediate layer, wherein the intermediate layer is adapted such that light emitted by the optoelectronic light sources at least partially spreads in and along the intermediate layer and exits the intermediate layer within and/or at a pre-set distance to the respective optoelectronic light source in a direction through the cover layer and/or through the carrier layer.
1. An optoelectronic device, in particular an at least semi-transparent pane for a vehicle, comprising:
a cover layer;
a carrier layer; and
an intermediate layer between the cover layer and the carrier layer;
wherein at least one and preferably a plurality of optoelectronic light sources is arranged on the intermediate layer and is at least partially exposed through at least one surface of the intermediate layer;
wherein the intermediate layer is adapted such that at least a portion of light emitted by the optoelectronic light sources spreads into and along the intermediate layer and exits the intermediate layer within a pre-set distance to the respective optoelectronic light source in one or more of a first direction through the cover layer or a second direction through the carrier layer;
wherein a first refractive index of the intermediate layer is larger than a second refractive index of the cover layer and of the carrier layer, or of an adhesive covering the intermediate layer; and
wherein one or more of dispersive structures, scattering structures, or reflective structures are arranged on the intermediate layer and are at least partially exposed through at least one surface of the intermediate layer.
2. The optoelectronic device according to claim 1 , wherein the light which spreads in and along the intermediate layer exits the intermediate layer within a pre-set angle of view, in particular almost perpendicular to the intermediate layer.
3. The optoelectronic device according to claim 1 , wherein the intermediate layer comprises or consists of a foil, which is laminated or fixed by an adhesive at the cover layer and/or at the carrier layer.
4. The optoelectronic device according to claim 1 , wherein the refractive index of the intermediate layer is larger than the refractive index of material adjacent to the intermediate layer.
5. The optoelectronic device according to claim 1 , wherein the dispersive or scattering structures are diffusion and/or scattering centers.
6. The optoelectronic device according to claim 5 , wherein a diffusion concentration of the diffusion centers is pre-set such that the mean free path length of light is larger than the thickness of the intermediate layer.
7. The optoelectronic device according to claim 1 , wherein the dispersive or scattering structures are formed in the intermediate layer as transparent particles, white particles, holes, density modifications, or air bubbles, in particular comprising sizes smaller than the emitted light wavelengths, in particular around or smaller than 2 μm.
8. The optoelectronic device according to claim 1 , wherein the dispersive or scattering structures are formed at the intermediate layer as structured areas, in particularly structured by stamping, printing, and/or by applying laser light.
9. The optoelectronic device according to claim 1 , wherein the reflective structures are formed close to a respective optoelectronic light source.
10. The optoelectronic device according to claim 1 , wherein the reflective structures are formed at a surface of the cover layer and/or at a surface of the carrier layer.
11. The optoelectronic device according to claim 1 , wherein the reflective structures are formed outside of the cover layer and/or outside of the carrier layer.
12. The optoelectronic device according to claim 1 , wherein the reflective structures are mirrors and/or metal coatings and/or dielectric coatings.
13. The optoelectronic device according to claim 1 , wherein the reflective structures directly cover at least one of the main surfaces of an optoelectronic light source.
14. The optoelectronic device according to claim 1 , wherein the device comprises, between the cover layer and the carrier layer, one or more combinations of an inside cover layer and an inside intermediate layer.
15. The optoelectronic device according to claim 14 , wherein optoelectronic light sources of each combination emits a selected colour, in particular at least one of red, green, and blue.
16. The optoelectronic device according to claim 14 , wherein light emitted by each optoelectronic light source at least partially spreads in and along the intermediate layer and exits the intermediate layer at a pre-set distance to the respective optoelectronic light source, wherein a dispersive or scattering structure, in particular with diffusion centers, transparent particles and/or white particles, is arranged on the inside of each intermediate layer.
17. The optoelectronic device according to claim 16 , wherein the dispersive or scattering structures form different two-dimensional indicator areas, in particular uniform symbols, colors, and/or animations.
18. The optoelectronic device according to claim 16 , wherein the dispersive structures of the intermediate layers are staggered along the intermediate layers.
19. The optoelectronic device according to claim 1 , wherein for light spreading and/or light extraction a converter material is integrated into the intermediate layer.
20. The optoelectronic device according to claim 1 , wherein the optoelectronic light sources are smaller than 300 μm, in particular smaller than 150 μm and/or the device includes electrical conductor paths which are made of at least one transparent material and/or which comprise widths smaller than 300 μm, in particular smaller than 150 μm.
21. The optoelectronic device according to claim 1 ,
wherein the device is a vehicle window, a cover of a vehicle lamp, a cover of a vehicle signal light, a mirror glass or an element of a car body lighting; and/or
the cover layer and/or the carrier layer and/or the intermediate layer is made of glass or another transparent material including methacrylate (PMMA) or polycarbonate (PC) or polyvinyl butyral (PVB) or polyvinyl acetate (PVA) or polyethylene terephthalate (PET).
22. An optoelectronic device, in particular an at least semi-transparent pane for a vehicle, comprising:
a cover layer;
a carrier layer; and
an intermediate layer between the cover layer and the carrier layer;
wherein at least one and preferably a plurality of optoelectronic light sources, is arranged on the intermediate layer and is at least partially exposed through at least one surface of the intermediate layer;
wherein the intermediate layer is adapted such that at least a portion of light emitted by the optoelectronic light sources spreads into and along the intermediate layer and exits the intermediate layer within a pre-set distance to the respective optoelectronic light source in one or more of a first direction through the cover layer or a second direction through the carrier layer;
wherein, for one or more of light spreading or light extraction, a converter material is integrated into the intermediate layer;
wherein a first refractive index of the intermediate layer is larger than a second refractive index of the cover layer and of the carrier layer, or of an adhesive covering the intermediate layer; and
wherein one or more of dispersive structures, scattering structures, or reflective structures are arranged on the intermediate layer and are at least partially exposed through at embedded in the intermediate layer.
23. A method of manufacturing of an optoelectronic device, in particular an at least semi-transparent pane, comprising:
arranging at least one and preferably a plurality of optoelectronic light sources on an intermediate layer;
exposing, at least partially, the at least one and preferably the plurality of optoelectronic light sources through at least one surface of the intermediate layer; and
arranging the intermediate layer between a cover layer and a carrier layer;
wherein a first refractive index of the intermediate layer is larger than a second refractive index of the cover layer and of the carrier layer, or of an adhesive covering the intermediate layer; and
wherein one or more of dispersive structures, scattering structures, or reflective structures are arranged on the intermediate layer and are at least partially exposed through at least one surface of the intermediate layer.