Semiconductor devices containing copper bonding pads with different conductive barrier layers and methods for forming the same
Bonding strength and yield can be enhanced by providing a mating pair of a convex bonding surface and a concave bonding surface. The convex bonding surface can be provided by employing a conductive barrier layer having a higher electrochemical potential than copper. The concave bonding surface can be provided by employing a conductive barrier layer having a lower electrochemical potential than copper. Alternatively additionally, a copper material portion in a bonding pad may include at least 10% volume fraction of (200) copper grains to provide high volume expansion toward a mating copper material portion. The mating copper material portion may be formed with at least 95% volume fraction of (111) copper grains to provide high surface diffusivity, or may be formed with at least 10% volume fraction of (200) copper grains to provide high volume expansion.
1. A bonded assembly, comprising:
a first semiconductor die comprising first semiconductor devices and a first bonding pad, wherein the first bonding pad comprises a first copper material portion and a first conductive barrier layer comprising a first conductive barrier material having a higher electrochemical potential than copper located between the first semiconductor devices and the first copper material portion; and
a second semiconductor die comprising second semiconductor devices and a second bonding pad, wherein the second bonding pad comprises a second copper material portion and a second conductive barrier layer comprising a second conductive barrier material having a lower electrochemical potential than copper located between the second semiconductor devices and the second copper material portion;
wherein:
the second bonding pad is bonded to the first bonding pad;
a bonding interface between the first bonding pads and the second bonding pads comprises a non-planar interface at which a convex surface of the first copper material portion contacts a concave surface of the second copper material portion;
the first semiconductor die further comprises:
at least one first dielectric material layer;
first metal interconnect structures embedded in the at least one first dielectric material layer and electrically connected to the first semiconductor devices; and
a first bonding-level dielectric layer, wherein the first bonding pad is embedded in the first bonding-level dielectric layer and electrically connected to at least one of the first metal interconnect structures; and
the second semiconductor die further comprises:
at least one second dielectric material layer;
second metal interconnect structures embedded in the at least one second dielectric material layer and electrically connected to the second semiconductor devices; and
a second bonding-level dielectric layer, wherein the second bonding pad is embedded in the second bonding-level dielectric layer and electrically connected to at least one of the second metal interconnect structures;
an entirety of a periphery of the convex surface of the first copper material portion is adjoined to a surface of the first bonding-level dielectric layer; and
the first conductive barrier layer is vertically spaced from the second bonding pad by a peripheral portion of the first copper material portion that contacts a sidewall of the first bonding-level dielectric layer.
2. A bonded assembly, comprising:
a first semiconductor die comprising first semiconductor devices and a first bonding pad, wherein the first bonding pad comprises a first copper material portion and a first conductive barrier layer comprising a first conductive barrier material having a higher electrochemical potential than copper located between the first semiconductor devices and the first copper material portion; and
a second semiconductor die comprising second semiconductor devices and a second bonding pad, wherein the second bonding pad comprises a second copper material portion and a second conductive barrier layer comprising a second conductive barrier material having a lower electrochemical potential than copper located between the second semiconductor devices and the second copper material portion;
wherein:
the second bonding pad is bonded to the first bonding pad;
wherein a bonding interface between the first bonding pads and the second bonding pads comprises a non-planar interface at which a convex surface of the first copper material portion contacts a concave surface of the second copper material portion;
the first semiconductor die further comprises:
at least one first dielectric material layer;
first metal interconnect structures embedded in the at least one first dielectric material layer and electrically connected to the first semiconductor devices; and
a first bonding-level dielectric layer, wherein the first bonding pad is embedded in the first bonding-level dielectric layer and electrically connected to at least one of the first metal interconnect structures; and
the second semiconductor die further comprises:
at least one second dielectric material layer;
second metal interconnect structures embedded in the at least one second dielectric material layer and electrically connected to the second semiconductor devices; and
a second bonding-level dielectric layer, wherein the second bonding pad is embedded in the second bonding-level dielectric layer and electrically connected to at least one of the second metal interconnect structures;
the second bonding-level dielectric layer is in direct contact with the first bonding-level dielectric layer at a horizontal plane;
a horizontal surface of a vertically-extending portion of the second conductive barrier layer is located within the horizontal plane; and
an annular surface of a vertically-extending portion of the first conductive barrier layer that faces the second semiconductor die and is most proximal to the second semiconductor die is vertically spaced from the horizontal plane by a peripheral portion of the first copper material portion.
3. The bonded assembly of claim 2 , wherein the annular surface comprises a non-planar grooved surface having a concave vertical cross-sectional profile, and the non-planar grooved surface is contacted entirely by the first copper material portion.