Direct bonded stack structures for increased reliability and improved yield in microelectronics
Direct bonded stack structures for increased reliability and improved yields in microelectronics are provided. Structural features and stack configurations are provided for memory modules and 3DICs to reduce defects in vertically stacked dies. Example processes alleviate warpage stresses between a thicker top die and direct bonded dies beneath it, for example. An etched surface on the top die may relieve warpage stresses. An example stack may include a compliant layer between dies. Another stack configuration replaces the top die with a layer of molding material to circumvent warpage stresses. An array of cavities on a bonding surface can alleviate stress forces. One or more stress balancing layers may also be created on a side of the top die or between other dies to alleviate or counter warpage. Rounding of edges can prevent stresses and pressure forces from being destructively transmitted through die and substrate layers. These measures may be applied together or in combinations in a single package.
1. An apparatus comprising:
a substrate; and
a die stack disposed on the substrate, the die stack comprising:
a plurality of directly bonded dies comprising a first die having a first hybrid bonding surface and a second die having a second hybrid bonding surface, wherein the first bonding surface of the first die is hybrid bonded to the second bonding surface of the second die without an adhesive;
a top die on the plurality of directly bonded dies; and
a non-die layer disposed between the top die and the plurality of directly bonded dies, wherein the non-die layer comprises at least one compliant layer;
a first lateral die support layer disposed along at least a portion of a sidewall of the first die, an entirety of the first lateral die support layer disposed laterally outside a footprint of the first die; and
a second lateral die support layer disposed laterally adjacent the top die and at least a portion of the first lateral die support layer, an entirety of the second lateral die support layer disposed laterally outside the die stack.
2. The apparatus of claim 1 , wherein the top die has first physical dimensions and wherein at least one die of the plurality of directly bonded dies has second physical dimensions different than the first physical dimensions.
3. The apparatus of claim 1 , wherein the non-die layer comprises one or more of a molding material, an underfill material, and an electrical interconnect.
4. The apparatus of claim 1 , wherein the at least one compliant layer comprises an adhesive.
5. The apparatus of claim 4 , wherein the at least one compliant layer has a Young's modulus of less than 4 GPa.
6. The apparatus of claim 1 , wherein the top die is a top-most die of the die stack.
7. The apparatus of claim 1 , further comprising one or more dies above the top die.
8. The apparatus of claim 1 , wherein the top die comprises a dummy die.
9. The apparatus of claim 1 , wherein the top die has a greater vertical thickness than at least one die of the plurality of directly bonded dies.
10. The apparatus of claim 1 , wherein the top die has at least one horizontal dimension greater than a corresponding horizontal dimension of at least one die of the plurality of directly bonded dies.
11. The apparatus of claim 1 , wherein the first lateral die support layer comprises a solid material that stabilizes the die stack.
12. The apparatus of claim 11 , wherein the solid material comprises underfill.
13. The apparatus of claim 11 , wherein the solid material comprises molding material.
14. The apparatus of claim 1 , wherein the plurality of directly bonded dies comprises a plurality of directly hybrid bonded integrated device dies.
15. An apparatus comprising:
a carrier; and
a singulated die having a bonding surface prepared for direct bonding, the bonding surface having a central region in contact with and directly bonded to the carrier and a peripheral region not in contact with and spaced apart from the carrier, the central region including a first dielectric layer in contact with and directly bonded to a second dielectric layer of the carrier without an adhesive.
16. The apparatus of claim 15 , wherein the carrier comprises a substrate, the singulated die comprising a bottom die of a die stack including a plurality of directly bonded dies.
17. The apparatus of claim 15 , wherein the carrier comprises a second die of a die stack including a plurality of directly bonded dies.
18. The apparatus of claim 17 , wherein the singulated die comprises a top die of the die stack.
19. The apparatus of claim 18 , wherein the top die comprises a dummy die.
20. The apparatus of claim 15 , wherein the peripheral region comprises a rounded corner of the singulated die.
21. The apparatus of claim 15 , further comprising an encapsulant surrounding at least a portion of the singulated die.
22. The apparatus of claim 21 , wherein the encapsulant comprises an underfill or molding material.
23. The apparatus of claim 21 , wherein the encapsulant covers substantially an entirety of a side surface of the singulated die.
24. The apparatus of claim 15 , wherein the peripheral region comprises a chamfered corner of the singulated die.
25. The apparatus of claim 15 , wherein the peripheral region comprises an angled transition from the central region to a side edge of the singulated die, wherein the angle is less than 90 degrees.
26. The apparatus of claim 15 , wherein the central region further includes a first conductive layer in contact with and directly bonded to a second conductive layer of the carrier without an adhesive.
27. An apparatus comprising:
a substrate;
a die stack on the substrate, the die stack comprising a plurality of dies including:
a first integrated device die comprising a first integrated circuit;
a second integrated device die comprising a second integrated circuit, the first integrated device die hybrid bonded to a first bonding layer on the second integrated device die; and
a dummy die directly bonded to a second bonding layer on an underlying die of the die stack without an intervening adhesive;
a first lateral die support layer disposed along at least a portion of a sidewall of the first integrated device die, an entirety of the first lateral die support layer disposed laterally outside a footprint of the first integrated device die; and
a second lateral die support layer disposed laterally adjacent at least a portion of the first lateral die support layer, an entirety of the second lateral die support layer disposed laterally outside the die stack.
28. The apparatus of claim 27 , wherein the dummy die comprises a top die of the die stack.
29. The apparatus of claim 27 , wherein the dummy die has a greater vertical thickness than an underlying die on which the dummy die is mounted.
30. The apparatus of claim 27 , wherein the dummy die has at least one horizontal dimension greater than a corresponding horizontal dimension of an underlying die on which the dummy die is mounted.
31. The apparatus of claim 27 , wherein the first lateral die support layer comprises an encapsulant.
32. The apparatus of claim 31 , wherein the encapsulant comprises a molding compound or underfill.
33. The apparatus of claim 27 , wherein the underlying die is the first or second integrated device die.
34. A method comprising:
forming a directly bonded die stack by directly bonding a first bonding surface of at least a first integrated device die and a second bonding surface of at least a second integrated device die without an adhesive;
providing a top die over the directly bonded die stack, the top die having a footprint larger than at least one of the first and second integrated device dies;
providing a non-die layer between the top die and the directly bonded die stack, wherein providing the non-die layer comprises providing a compliant layer between the top die and the directly bonded die stack;
providing a first lateral die support layer disposed along at least a portion of a sidewall of the first integrated device die, an entirety of the first lateral die support layer disposed laterally outside a footprint of the first integrated device die; and
providing a second lateral die support layer disposed laterally adjacent the top die and at least a portion of the first lateral die support layer, an entirety of the second lateral die support layer disposed laterally outside the directly bonded die stack.
35. The method of claim 34 , further comprising applying an encapsulant to abut at least a portion of the periphery of the first integrated device die or the second integrated device die.
36. The method of claim 34 , wherein the top die is a dummy die.
37. The method of claim 34 , wherein the top die is thicker than at least one of the first and second integrated device dies.
38. The method of claim 34 , wherein the compliant layer comprises an adhesive.
39. The method of claim 34 , further including the step of, before providing a top die over the directly bonded die stack, attaching the directly bonded die stack to a substrate, the substrate having a footprint larger than at least one of the first and second integrated device dies.
40. An apparatus comprising:
a die stack, the die stack comprising a plurality of dies including:
a first integrated device die comprising a first integrated circuit;
a second integrated device die comprising a second integrated circuit, the first integrated device die hybrid bonded to a first bonding layer on the second integrated device die; and
a top die directly bonded to a second bonding layer on the first integrated device die without an adhesive, the top die comprising a dummy die;
a first lateral die support layer disposed along at least a portion of a sidewall of the first integrated device die, an entirety of the first lateral die support layer disposed laterally outside a footprint of the first integrated device die; and
a second lateral die support layer disposed laterally adjacent the top die and at least a portion of the first lateral die support layer, an entirety of the second lateral die support layer disposed laterally outside the die stack.
41. The apparatus of claim 40 , wherein the first lateral die support layer abuts a sidewall of the first integrated device die but not a sidewall of the top die.
42. The apparatus of claim 40 , wherein the top die is a top-most die of the die stack.
43. The apparatus of claim 40 , wherein the top die has a greater vertical thickness than the first and second integrated device dies.
44. The apparatus of claim 40 , wherein the first lateral die support layer comprises an encapsulant that covers an entirety of the sidewall of the first integrated device die.
45. An apparatus comprising:
a substrate; and
a singulated die directly bonded to the substrate, the singulated die disposed above the substrate along a vertical direction and having a bonding surface directly bonded to the substrate, the bonding surface at least partially defined by a lateral bonding plane disposed transverse to the vertical direction,
wherein the singulated die comprises a first die edge, a second die edge transverse to the first die edge, and a corner region having a transition between the first and second die edges that is non-perpendicular in the bonding plane.
46. The apparatus of claim 45 , wherein the non-perpendicular transition is chamfered.
47. The apparatus of claim 45 , wherein the non-perpendicular transition is rounded.
48. The apparatus of claim 45 , wherein the non-perpendicular transition is angled relative to the first and second die edges.
49. The apparatus of claim 45 , wherein the non-perpendicular transition reduces stress concentration as compared to a perpendicular transition.
50. The apparatus of claim 45 , wherein multiple corner regions of the singulated die include transitions between adjacent die edges that are non-perpendicular in the bonding plane.
51. The apparatus of claim 45 , wherein the singulated die is hybrid bonded to the substrate.
52. The apparatus of claim 45 , wherein the first and second die edges are covered by an encapsulant.
53. The apparatus of claim 45 , wherein the substrate comprises a second die.
54. The apparatus of claim 53 , wherein the second die comprises a third die edge, a fourth die edge transverse to the third die edge, and a second corner region having a transition between the third and fourth die edges that is non-perpendicular in the bonding plane.
55. The apparatus of claim 45 , wherein the singulated die further comprises a third die edge transverse to the second die edge and a fourth die edge transverse to the third die edge, and wherein at least one of the first, second, third, and fourth die edges is laterally offset from an outside edge of the substrate.