Direct bonded stack structures for increased reliability and improved yield in microelectronics
Direct bonded stack structures for increased reliability and improved yields in microelectronics are provided. Structural features and stack configurations are provided for memory modules and 3DICs to reduce defects in vertically stacked dies. Example processes alleviate warpage stresses between a thicker top die and direct bonded dies beneath it, for example. An etched surface on the top die may relieve warpage stresses. An example stack may include a compliant layer between dies. Another stack configuration replaces the top die with a layer of molding material to circumvent warpage stresses. An array of cavities on a bonding surface can alleviate stress forces. One or more stress balancing layers may also be created on a side of the top die or between other dies to alleviate or counter warpage. Rounding of edges can prevent stresses and pressure forces from being destructively transmitted through die and substrate layers. These measures may be applied together or in combinations in a single package.
1. An apparatus comprising:
a substrate; and
a direct bonded die stack formed on the substrate, the direct bonded die stack comprising a plurality of dies including:
a first die comprising a first bonding surface, wherein the first die possesses first physical dimensions and is a top die of the direct bonded die stack;
a second die comprising a second bonding surface, wherein the second die possesses second physical dimensions different than the first physical dimensions; and
an array of cavities on the first bonding surface of the top die,
wherein the first bonding surface of the first die is direct bonded to the second bonding surface of the second die.
2. The apparatus of claim 1 , wherein the top first die has a greater vertical thickness than the second die.
3. The apparatus of claim 1 , wherein the top die has at least one horizontal dimension greater than a corresponding horizontal dimension of the second die.
4. The apparatus of claim 3 , wherein the top die has two horizontal dimensions greater than corresponding horizontal dimensions of the second die.
5. The apparatus of claim 1 , further comprising an underfill or molding material on the substrate and surrounding at least a portion of the dies in the direct bonded die stack.
6. The apparatus of claim 1 , wherein the top die comprises a dummy die.
7. The apparatus of claim 1 , wherein the top die has a surface with a central region in contact with the second die in the direct bonded die stack and a peripheral region with at least a portion of the surface not in contact with the second die in the direct bonded die stack.
8. The apparatus of claim 1 , wherein at least one of the dies in the direct bonded die stack comprises a memory die.
9. The apparatus of claim 1 , wherein at least one of the dies in the direct bonded die stack has rounded edges.
10. An apparatus comprising:
a substrate; and
a direct bonded die stack formed on the substrate, the direct bonded die stack comprising:
a plurality of dies including:
a first die comprising a first bonding surface, wherein the first die possesses first physical dimensions and is a top die of the direct bonded die stack; and
a second die comprising a second bonding surface, wherein the second die possesses second physical dimensions different than the first physical dimensions,
wherein the first bonding surface of the first die is direct bonded to the second bonding surface of the second die; and
a non-die layer within the direct bonded die stack.
11. The apparatus of claim 10 , wherein the non-die layer comprises one of a molding material, an underfill material, an electrical interconnect, an electrical interconnect embedded in a molding material, or an electrical interconnect embedded in an underfill material.
12. The apparatus of claim 11 , wherein the molding material, the underfill material, or the electrical interconnect extends at least partially between the top die and the second die in the direct bonded die stack.
13. The apparatus of claim 10 , wherein the non-die layer comprises at least one compliant layer in the direct bonded die stack.
14. The apparatus of claim 13 , wherein the at least one compliant layer has a Young's modulus of less than 4 GPa.
15. The apparatus of claim 10 , wherein the non-die layer comprises one of a titanium nitride-tantalum (TiN/Ta) layer, an aluminum layer, a tantalum layer, or a combination of aluminum and tantalum layers.
16. The apparatus of claim 10 , wherein the non-die layer comprises a curved surface.
17. The apparatus of claim 10 , further comprising a die support structure contacting at least a portion of the dies in the direct bonded die stack, the non-die layer in contact with the die support structure.
18. The apparatus of claim 10 , wherein a functional die in the direct bonded die stack is vertically thinner than the top die.