Pellicle for extreme ultraviolet lithography based on yttrium
This application relates to a pellicle for extreme ultraviolet lithography based on yttrium (Y) and used in a lithography process using extreme ultraviolet rays. In one aspect, the pellicle includes a pellicle layer including a core layer formed of an yttrium-based material expressed as Y-M (M is one of B, Si, O, or F).
1. A pellicle for extreme ultraviolet lithography, the pellicle comprising:
a pellicle layer including a core layer formed of an yttrium-based material expressed as Y-M, wherein M is one of Si, O, or F.
2. The pellicle of claim 1 , wherein the yttrium-based material includes Y—Si x (x≥1), Y 2 O 3 , or YF 3 .
3. The pellicle of claim 1 , wherein the yttrium-based material includes YSi 2 or Y 3 Si 5 .
4. The pellicle of claim 1 , wherein the pellicle layer includes:
the core layer; and
a capping layer formed on one or both surfaces of the core layer,
wherein the capping layer includes Y-M-α (M is one of B, Si, O, or F, and α is one of Si, C, B, N, O, or Ru).
5. The pellicle of claim 4 , wherein the capping layer includes YC x Si y (x+y≥1), YC x B y (x+y≥1), YSi x N y (x+y≥1), YC x (x≥1), YSi x (x≥1), YN x (x≥1), SiN x (x≥1), SiO 2 , B 4 C, or RuC.
6. The pellicle of claim 1 , wherein the pellicle layer includes:
the core layer;
an intermediate layer formed on one or both surfaces of the core layer; and
a capping layer formed on the intermediate layer,
wherein each of the intermediate layer and the capping layer includes Y-M-α (M is one of B, Si, O, or F, and α is one of Si, C, B, N, O, or Ru).
7. The pellicle of claim 6 , wherein each of the intermediate layer and the capping layer includes YC x Si y (x+y≥1), YC x B y (x+y≥1), YSi x N y (x+y≥1), YC x (x≥1), YSi x (x≥1), YN x (x≥1), SiN x (x≥1), SiO 2 , B 4 C, or RuC.
8. A pellicle for extreme ultraviolet lithography, the pellicle comprising:
a substrate having an opening formed in a central portion thereof; and
a pellicle layer formed on the substrate so as to cover the opening and including a core layer formed of an yttrium-based material expressed as Y-M, wherein M is one of Si, O, or F.
9. The pellicle of claim 8 , wherein the yttrium-based material includes Y—Si x (x≥1), Y 2 O 3 , or YF 3 .
10. The pellicle of claim 8 , wherein the pellicle layer includes:
the core layer formed on the substrate so as to cover the opening; and
a capping layer formed on the core layer,
wherein the capping layer includes Y-M-α (M is one of B, Si, O, or F, and α is one of Si, C, B, N, O, or Ru).
11. The pellicle of claim 10 , wherein the capping layer includes YC x Si y (x+y≥1), YC x B y (x+y≥1), YSi x N y (x+y≥1), YC x (x≥1), YSi x (x≥1), YN x (x≥1), SiN x (x≥1), SiO 2 , B 4 C, or RuC.
12. The pellicle of claim 8 , wherein the pellicle layer includes:
the core layer formed on the substrate so as to cover the opening;
an intermediate layer formed on one or both surfaces of the core layer; and
a capping layer formed on the intermediate layer,
wherein each of the intermediate layer and the capping layer includes Y-M-α (M is one of B, Si, O, or F, and α is one of Si, C, B, N, O, or Ru).
13. The pellicle of claim 12 , wherein each of the intermediate layer and the capping layer includes YC x Si y (x+y≥1), YC x B y (x+y≥1), YSi x N y (x+y≥1), YC x (x≥1), YSi x (x≥1), YN x (x≥1), SiN x (x≥1), SiO 2 , B 4 C, or RuC.
14. A pellicle for extreme ultraviolet lithography, the pellicle comprising:
a pellicle layer including:
a core layer formed of an yttrium-based material expressed as Y-M, wherein M is one of B, Si, O, or F; and
a capping layer formed on one or both surfaces of the core layer, and formed of an yttrium-based material expressed as Y-M-α, wherein M is one of B, Si, O, or F, and α is one of Si, C, B, N, O, or Ru.
15. The pellicle of claim 14 , wherein the yttrium-based material includes Y—B x (x≥2), Y—Si x (x≥1), Y 2 O 3 , or YF 3 .
16. The pellicle of claim 14 , wherein the yttrium-based material includes YB 2 , YB 4 , YB 6 , YB 12 , YB 25 , YB 50 , or YB 66 .