Semiconductor light emitting device, display apparatus including the same, and method of manufacturing the same
Provided is a semiconductor light emitting device including a semiconductor structure including a first semiconductor layer, a light emitting layer, and a second semiconductor layer, a side extension structure disposed adjacent to a sidewall of the semiconductor structure, a first electrode having a first portion extending through the second semiconductor layer and the light emitting layer and electrically connected to the first semiconductor layer, and a second portion extending on an upper surface of the side extension structure in a horizontal direction, and a second electrode having a first portion electrically connected to the second semiconductor layer and a second portion extending on the upper surface of the side extension structure in the horizontal direction.
1 . A semiconductor light emitting device comprising:
a semiconductor structure comprising a first semiconductor layer, a light emitting layer, and a second semiconductor layer;
a side extension structure disposed adjacent to a sidewall of the semiconductor structure;
a first electrode having a first portion extending through the second semiconductor layer and the light emitting layer and electrically connected to the first semiconductor layer, and a second portion extending on an upper surface of the side extension structure in a horizontal direction; and
a second electrode having a first portion electrically connected to the second semiconductor layer and a second portion extending on the upper surface of the side extension structure in the horizontal direction,
wherein a portion of the second portion of the first electrode and a portion of the second portion of the second electrode extend in mutually opposite horizontal directions to protrude more than an entirety of the sidewall of the semiconductor structure.
2 . The semiconductor light emitting device of claim 1 , wherein a portion of the second portion of the first electrode and a portion of the second portion of the second electrode extend by the sidewall of the semiconductor structure in the horizontal direction and are disposed on the side extension structure.
3 . The semiconductor light emitting device of claim 1 , further comprising an insulating layer disposed on a surface of the second semiconductor layer and a surface of the side extension structure.
4 . The semiconductor light emitting device of claim 3 , wherein the insulating layer is disposed adjacent to a sidewall of the first portion of the first electrode inside the second semiconductor layer and the light emitting layer such that the first electrode is spaced apart from the second semiconductor layer and the light emitting layer, and
wherein the first portion of the second electrode is in contact with the second semiconductor layer through the insulating layer.
5 . The semiconductor light emitting device of claim 4 , wherein the second portion of the first electrode and the second portion of the second electrode are disposed on a surface of the insulating layer.
6 . The semiconductor light emitting device of claim 1 , wherein the side extension structure comprises:
a first side extension structure spaced apart from the sidewall of the semiconductor structure and disposed adjacent to the sidewall of the semiconductor structure; and
a second side extension structure disposed between the sidewall of the semiconductor structure and the first side extension structure.
7 . The semiconductor light emitting device of claim 6 , wherein the second side extension structure extends to an upper surface of the first side extension structure.
8 . The semiconductor light emitting device of claim 1 , further comprising:
a first bump disposed on the first electrode; and
a second bump disposed on the second electrode.
9 . The semiconductor light emitting device of claim 8 , wherein at least a portion of the first bump and at least a portion of the second bump extend adjacent to the sidewall of the semiconductor structure and face a surface of the side extension structure.
10 . The semiconductor light emitting device of claim 1 , further comprising a functional layer disposed on a surface of the second semiconductor layer and including a metal or a transparent conductor.
11 . The semiconductor light emitting device of claim 1 , wherein a width or diameter of the semiconductor structure ranges from 1 μm to 100 μm.
12 . The semiconductor light emitting device of claim 11 , wherein a width or diameter of the semiconductor light emitting device is 1.5 to 2.5 times the width or diameter of the semiconductor structure.
13 . A display apparatus comprising:
a display substrate including a driving circuit; and
a plurality of semiconductor light emitting devices disposed on the display substrate,
wherein each of the semiconductor light emitting devices comprises:
a semiconductor structure including a first semiconductor layer, a light emitting layer, and a second semiconductor layer;
a side extension structure disposed adjacent to a sidewall of the semiconductor structure;
a first electrode having a first portion extending through the second semiconductor layer and the light emitting layer and electrically connected to the first semiconductor layer, and a second portion extending on an upper surface of the side extension structure in a horizontal direction; and
a second electrode having a first portion electrically connected to the second semiconductor layer and a second portion extending on the upper surface of the side extension structure in the horizontal direction,
wherein a portion of the second portion of the first electrode and a portion of the second portion of the second electrode extend in mutually opposite horizontal directions to protrude more than an entirety of the sidewall of the semiconductor structure.
14 . The display apparatus of claim 13 , wherein the plurality of semiconductor light emitting devices comprises a first semiconductor light emitting device and a second semiconductor light emitting device disposed adjacent to each other, and
wherein the first semiconductor light emitting device and the second semiconductor light emitting device share a single side extension structure disposed between the first semiconductor light emitting device and the second semiconductor light emitting device.
15 . The display apparatus of claim 13 , wherein the plurality of semiconductor light emitting devices are integrally formed.
16 . The display apparatus of claim 13 , further comprising a wavelength conversion layer configured to convert a wavelength of light emitted from the plurality of semiconductor light emitting devices.
17 . The display apparatus of claim 16 , wherein the wavelength conversion layer comprises:
a first wavelength conversion layer configured to convert light emitted from the plurality of semiconductor light emitting devices into light having a first wavelength band; and
a second wavelength conversion layer configured to convert light emitted from the plurality of semiconductor light emitting devices into light having a second wavelength band different from the first wavelength band.
18 . The display apparatus of claim 17 , further comprising a color filter layer comprising:
a first filter facing the first wavelength conversion layer and configured to transmit light having the first wavelength band; and
a second color filter layer facing the second wavelength conversion layer and configured to transmit light having the second wavelength band.
19 . The display apparatus of claim 13 , wherein a portion of the second portion of the first electrode and a portion of the second portion of the second electrode extend adjacent to the sidewall of the semiconductor structure in the horizontal direction and are disposed on the side extension structure.
20 . The display apparatus of claim 13 , wherein each of the semiconductor light emitting devices further comprises an insulating layer disposed on a surface of the second semiconductor layer and a surface of the side extension structure.
21 . The display apparatus of claim 20 , wherein the insulating layer is disposed adjacent to a sidewall of the first portion of the first electrode inside the second semiconductor layer and the light emitting layer such that the first electrode is spaced apart from the second semiconductor layer and the light emitting layer, and
wherein the first portion of the second electrode is in contact with the second semiconductor layer through the insulating layer.
22 . The display apparatus of claim 21 , wherein the second portion of the first electrode and the second portion of the second electrode are disposed on a surface of the insulating layer.
23 . The display apparatus of claim 13 , wherein the side extension structure comprises:
a first side extension structure spaced apart from the sidewall of the semiconductor structure and disposed adjacent to the sidewall of the semiconductor structure; and
a second side extension structure disposed between the sidewall of the semiconductor structure and the first side extension structure.
24 . The display apparatus of claim 23 , wherein the second side extension structure extends to an upper surface of the first side extension structure.
25 . The display apparatus of claim 13 , wherein each of the semiconductor light emitting devices comprises:
a first bump disposed on the first electrode; and
a second bump disposed on the second electrode.
26 . The display apparatus of claim 25 , wherein at least a portion of the first bump and at least a portion of the second bump extend adjacent to the sidewall of the semiconductor structure and face a surface of the side extension structure.
27 . The display apparatus of claim 13 , wherein each of the semiconductor light emitting devices comprises a functional layer disposed on a surface of the second semiconductor layer and including a metal or a transparent conductor.
28 . The display apparatus of claim 13 , wherein a width or diameter of the semiconductor structure ranges from 1 μm to 100 μm.
29 . The display apparatus of claim 28 , wherein a width or diameter of each of the semiconductor light emitting devices is 1.5 to 2.5 times the width or diameter of the semiconductor structure.
30 . A semiconductor light emitting device comprising:
a semiconductor structure comprising a first semiconductor layer, a light emitting layer, and a second semiconductor layer;
a side extension structure extending adjacent to a sidewall of the semiconductor structure;
a first electrode comprising:
a first portion extending in a vertical direction through the second semiconductor layer and the light emitting layer and in contact with the first semiconductor layer; and
a second portion extending on an upper surface of the side extension structure in a horizontal direction; and
a second electrode comprising:
a first portion extending in the vertical direction and in contact with the second semiconductor layer; and
a second portion extending on the upper surface of the side extension structure in the horizontal direction,
wherein a portion of the second portion of the first electrode and a portion of the second portion of the second electrode extend in mutually opposite horizontal directions to protrude more than an entirety of the sidewall of the semiconductor structure.