Display device including reflective structure
Provided is a display device including a driving substrate, a barrier layer disposed on an upper surface of the driving substrate and including a plurality of recesses, a micro-semiconductor light emitting device disposed in each of the plurality of recesses, and a side reflective structure disposed in the barrier layer and provided adjacent to a sidewall of each of the plurality of recesses.
1 . A display device comprising:
a driving substrate comprising a driving circuit;
a barrier layer disposed on an upper surface of the driving substrate and including a plurality of recesses;
a micro-semiconductor light emitting device disposed in each of the plurality of recesses;
a side reflective structure disposed in the barrier layer and provided adjacent to a sidewall of each of the plurality of recesses; and
a lower reflective structure on a bottom surface of each of the plurality of recesses,
wherein the side reflective structure is spaced apart from the driving substrate,
wherein an uppermost surface of the side reflective structure opposite to the driving substrate is coplanar to an upper surface of the barrier layer, and a bottom surface of the micro-semiconductor light emitting device is coplanar to a bottom surface of the side reflective structure,
wherein the lower reflective structure comprises a reflective metal layer and an insulating layer disposed on the reflective metal layer, the insulating layer having a hydrophilic surface,
wherein an upper surface of the insulating layer is in contact with a lower surface of the side reflective structure, and
wherein a width of the reflective metal layer is larger than a width of the micro-semiconductor light emitting device such that the reflective metal layer faces an entire bottom surface of the micro-semiconductor light emitting device and extends continuously across the entire bottom surface of the micro-semiconductor light emitting device.
2 . The display device of claim 1 , wherein the side reflective structure is disposed such that the sidewall of each of the plurality of recesses is disposed between the micro-semiconductor light emitting device and the side reflective structure, and
wherein a distance from the sidewall of each of the plurality of recesses to the side reflective structure is within a range from 0.1 μm to 50 μm.
3 . The display device of claim 1 , wherein a width of the side reflective structure in a direction parallel to the upper surface of the driving substrate is within a range from 1 μm to a value smaller than a width of the micro-semiconductor light emitting device.
4 . The display device of claim 1 , wherein the side reflective structure includes a metallic material.
5 . The display device of claim 1 , wherein the side reflective structure extends from the upper surface of the barrier layer to a lower surface of the barrier layer.
6 . The display device of claim 1 , wherein the side reflective structure is configured to reflect light emitted from the micro-semiconductor light emitting device.
7 . The display device of claim 1 , wherein an area of the lower reflective structure is larger than an area of each of the plurality of recesses, and a portion of the barrier layer is disposed above a portion of an upper surface of the lower reflective structure.
8 . The display device of claim 7 , wherein the lower reflective structure is disposed such that the upper surface of the lower reflective structure is in contact with the lower surface of the side reflective structure.
9 . The display device of claim 1 , wherein a thickness of the reflective metal layer in a normal direction of the upper surface of the driving substrate is within a range of 50 nm to 1 μm.
10 . The display device of claim 1 , wherein the reflective metal layer includes at least one of metals among aluminum (Al) or silver (Ag).
11 . The display device of claim 1 , further comprising a hydrophobic pattern disposed on the upper surface of the barrier layer and including a material same as a material of the side reflective structure.
12 . The display device of claim 1 , wherein a lower surface of the micro-semiconductor light emitting device in contact with the bottom surface of each of the plurality of recesses has hydrophilicity.
13 . The display device of claim 12 , wherein the micro-semiconductor light emitting device comprises a first electrode and a second electrode disposed on an upper surface thereof.
14 . The display device of claim 1 , wherein each of the plurality of recesses comprises a first trap region having a space in which the micro-semiconductor light emitting device moves and a second trap region having a shape and size in which the micro-semiconductor light emitting device is seated, the second trap region being connected to the first trap region.
15 . The display device of claim 14 , wherein a size of the first trap region is set such that two or more of the micro-semiconductor light emitting devices do not enter each of the plurality of recesses.
16 . The display device of claim 14 , wherein a width of the second trap region is within a range from 100% to about 105% of a width of the micro-semiconductor light emitting device.
17 . The display device of claim 1 , further comprising a wavelength conversion layer configured to convert a wavelength of light emitted from the micro-semiconductor light emitting device.
18 . A display device comprising:
a driving substrate comprising a driving circuit;
a plurality of micro-semiconductor light emitting devices disposed on an upper surface of the driving substrate;
a protective layer disposed on the upper surface of the driving substrate and the plurality of micro-semiconductor light emitting devices;
a side reflective structure disposed inside the protective layer and adjacent to a periphery of each of the plurality of micro-semiconductor light emitting devices; and
a lower reflective structure between a bottom surface of each of the plurality of micro-semiconductor light emitting devices and the upper surface of the driving substrate,
wherein the side reflective structure is spaced apart from the driving substrate,
wherein an uppermost surface of the side reflective structure opposite to the driving substrate is coplanar to an upper surface of the protective layer, and the bottom surface of each of the plurality of micro-semiconductor light emitting devices is coplanar to a bottom surface of the side reflective structure,
wherein the lower reflective structure comprises a reflective metal layer and an insulating layer disposed on the reflective metal layer, the insulating layer having a hydrophilic surface,
wherein an upper surface of the insulating layer is in contact with a lower surface of the side reflective structure, and
wherein a width of the reflective metal layer is larger than a width of the micro-semiconductor light emitting device such that the reflective metal layer faces an entire bottom surface of the micro-semiconductor light emitting device and extends continuously across the entire bottom surface of the micro-semiconductor light emitting device.
19 . The display device of claim 18 , wherein a width of the side reflective structure in a direction parallel to the upper surface of the driving substrate is within a range from 1 μm to a value smaller than a width of each of the plurality of micro-semiconductor light emitting devices.
20 . The display device of claim 18 , wherein the side reflective structure includes a metallic material.
21 . The display device of claim 18 , wherein the side reflective structure extends from the upper surface of the protective layer to a lower surface of the protective layer.
22 . The display device of claim 18 , wherein each of the plurality of micro-semiconductor light emitting devices comprises a first electrode and a second electrode disposed on a surface.