IP Library › Granted Patent US 12,412,753
Granted Patent B2
US 12,412,753 · App. 17/756,576 · Granted Sep 9, 2025

Semiconductor device and manufacturing method of the same

Inventor: Tsuyoshi Watanabe (Kanagawa, JP)
Assignee: SONY SEMICONDUCTOR SOLUTIONS CORPORATION
H01L21/563H01L23/3128H01L23/66H01L24/16H01L24/73H01L2223/6677H01L2224/16225H01L2224/73204
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Quick Facts
Patent No.
US 12,412,753
App. No.
17/756,576
Granted
Sep 9, 2025
Kind
B2
Abstract

Restrictions in placement of an antenna for performing transmission and reception of a signal by wireless communication when the antenna is used together with a CSP (Chip Size Package) are eliminated. A semiconductor device includes a chip size package and a substrate. The chip size package includes a semiconductor element. Further, the chip size package includes a connection portion that electrically connects the semiconductor element and an outside to each other. The substrate includes an antenna connected to the connection portion of the chip size package for performing transmission and reception of a signal by wireless communication. With this configuration, the semiconductor device performs transmission and reception of a signal to and from the outside through the antenna provided on the substrate.

Claims (27)

1. A semiconductor device, comprising:

a substrate; and

a chip size package that includes:

a semiconductor element,

a glass on a front surface of the semiconductor element, and

a connection portion configured to electrically connect the semiconductor element and the substrate, wherein

the substrate includes a first antenna connected to the connection portion, wherein the first antenna is configured to execute each of transmission of a first signal and reception of a second signal by wireless communication.

2. The semiconductor device according to claim 1 , further comprising a conductive resin on an upper surface of the substrate, wherein

the upper surface faces the chip size package.

3. The semiconductor device according to claim 2 , wherein the conductive resin includes carbon or ferrite.

4. The semiconductor device according to claim 1 , wherein the connection portion includes a solder bump.

5. The semiconductor device according to claim 1 , further comprising an underfill between the substrate and the semiconductor element of the chip size package.

6. The semiconductor device according to claim 5 , wherein the underfill includes a non-conductive resin.

7. The semiconductor device according to claim 1 , wherein the substrate further includes a wire configured to connect the first antenna to a position corresponding to the connection portion.

8. The semiconductor device according to claim 1 , wherein a width of the chip size package is equal to a width of the substrate.

9. The semiconductor device according to claim 1 , further comprising an external substrate external to the chip size package, wherein

the external substrate includes a second antenna, and

the second antenna is configured to execute each of transmission of the second signal to the first antenna, and reception of the first signal from the first antenna.

10. The semiconductor device according to claim 9 , wherein the substrate further includes a plurality of connection terminals configured to electrically connect the substrate and the external substrate.

11. The semiconductor device according to claim 10 , wherein, the plurality of connection terminals includes a power supply terminal and a ground terminal.

12. The semiconductor device according to claim 1 , wherein the connection portion is within a vicinity of the semiconductor element.

13. The semiconductor device according to claim 1 , wherein the semiconductor element includes a solid-state imaging element.

14. The semiconductor device according to claim 1 , wherein the chip size package further includes a rib between the glass and the semiconductor element.

15. The semiconductor device according to claim 1 , wherein

the semiconductor element includes a pixel area on the front surface of the semiconductor element, and

the pixel area is configured to receive incident light through the glass.

16. The semiconductor device according to claim 10 , wherein the plurality of connection terminals is configured to electrically connect the substrate and the external substrate via a plurality of solder balls.

Assignments (1)
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded May 27, 2022
From: WATANABE, TSUYOSHI
To: SONY SEMICONDUCTOR SOLUTIONS CORPORATION
Reel/Frame 060037/0411 →
Priority Claims (1)
JP 2019-221783 · Dec 9, 2019 · national
Continuity (1)
Related Publication 20230005759A1 · Jan 5, 2023
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