IP Library Granted Patent US 12,460,300
Granted Patent B2
US 12,460,300 · App. 17/776,590 · Granted Nov 4, 2025

Method and apparatus for sputter deposition of target material to a substrate

Inventors: Michael Edward Rendall (Newbury, GB); Robert Ian Joseph Gruar (Swindon, GB)
Assignee: Dyson Technology Limited
C23C16/52C23C14/56C23C16/45536H01J37/3277
View Patent ↗
Loading inventors, assignments & file history…
Monitor This Case
Get email alerts when status or documents change.
Order Certified Copies
Most orders are placed with the USPTO same day — all within 24 business hours.
Order via The Patent Place →
Pre-filled with this patent's details
Quick Facts
Patent No.
US 12,460,300
App. No.
17/776,590
Granted
Nov 4, 2025
Kind
B2
Abstract

Apparatus for sputter deposition of target material to a substrate is disclosed. In one form, the apparatus includes a substrate guide arranged to guide a substrate along a curved path and a target portion spaced from the substrate guide and arranged to support target material. The target portion and the substrate guide define between them a deposition zone. The apparatus includes a confining arrangement including one or more magnetic elements arranged to provide a confining magnetic field to confine plasma in the deposition zone thereby to provide for sputter deposition of target material to the web of substrate in use. The confining magnetic field includes magnetic field lines arranged to, at least in the deposition zone, substantially follow a curve of the curved path so as to confine said plasma around said curve of the curved path.

Claims (22)

1 . An apparatus for sputter deposition of target material to a substrate, the apparatus comprising:

a substrate guide arranged to guide a substrate along a curved path, wherein the substrate is in a form of a web;

a target portion spaced from the substrate guide and arranged to support target material, the target portion and the substrate guide defining between them a deposition zone; and

a confining arrangement comprising one or more magnetic elements arranged to provide a confining magnetic field to confine plasma in the deposition zone thereby to provide for sputter deposition of target material to the web of substrate in use, the confining magnetic field including magnetic field lines arranged to, at least in the deposition zone, substantially follow a curve of the curved path so as to confine said plasma around said curve of the curved path, wherein each of the one or more magnetic elements is in a form of a solenoid, the solenoid being elongate in a direction substantially perpendicular to a direction of the magnetic field lines of the confining magnetic field in use.

2 . The apparatus according to claim 1 , wherein the one or more magnetic elements are arranged to provide the confining magnetic field so as to confine plasma in the form of a curved sheet.

3 . The apparatus according to claim 1 , wherein the one or more magnetic elements are arranged to provide the confining magnetic field so as to confine plasma in the form of a curved sheet having, at least in the deposition zone, a substantially uniform density.

4 . The apparatus according to claim 1 , wherein one or more of the magnetic elements is an electromagnet.

5 . The apparatus according to claim 4 , wherein the apparatus comprises a controller arranged to control the magnetic field provided by one or more of the electromagnets.

6 . The apparatus according to claim 1 , wherein the confining arrangement comprises at least two of the magnetic elements arranged to provide the confining magnetic field.

7 . The apparatus according to claim 6 , wherein the at least two magnetic elements are arranged such that a region of relatively high magnetic field strength provided between the magnetic elements substantially follows the curve of the curved path.

8 . The apparatus according to claim 1 , wherein the magnetic field lines are each curved so as to, at least in the deposition zone, substantially follow the curve of the curved path.

9 . The apparatus according to claim 8 , wherein each solenoid has an opening via which plasma is confined in use, the opening being elongate in a direction substantially parallel to a longitudinal axis of the substrate guide.

10 . The apparatus according to claim 8 , the apparatus further comprising a plasma generation arrangement arranged to generate plasma, wherein the plasma generation arrangement comprises one or more elongate antennae that extend in a direction substantially parallel to a longitudinal axis of the substrate guide.

11 . The apparatus according to claim 1 , wherein the magnetic field lines are arranged such that an imaginary line, extending perpendicularly to each magnetic field line and connecting the magnetic field lines, is curved so as to, at least in the deposition zone, substantially follow the curve of the curved path.

12 . The apparatus according to claim 11 , wherein each solenoid has an opening through which plasma is confined in use, the opening being curved and elongate in a direction substantially perpendicular to a longitudinal axis of the substrate guide.

13 . The apparatus according to claim 11 , the apparatus further comprising a plasma generation arrangement arranged to generate plasma, wherein the plasma generation arrangement comprises one or more elongate antennae that are curved and extend in a direction substantially perpendicular to a longitudinal axis of the substrate guide.

14 . The apparatus according to claim 1 , wherein the target portion is arranged, or is configurable to be arranged, such that at least one part of the target portion defines a supporting surface forming an obtuse angle with respect to a supporting surface of another part of the target portion.

15 . The apparatus according to claim 1 , wherein the target portion is substantially curved.

16 . The apparatus according to claim 1 , wherein the target portion is arranged to substantially follow or approximate the curve of the curved path.

17 . The apparatus according to claim 1 , wherein the substrate guide is provided by a curved member that guides a web of substrate along the curved path.

18 . A method of sputter deposition of target material to substrate using the apparatus of claim 1 , the substrate being guided by a substrate guide along a curved path, wherein a deposition zone is defined between the substrate guide and a target portion supporting target material, the method comprising:

providing a magnetic field to confine plasma in the deposition zone thereby to cause sputter deposition of target material to the web of substrate, the magnetic field including magnetic field lines arranged to, at least in the deposition zone, substantially follow a curve of the curved path so as to confine said plasma around the curved path.

Assignments (1)
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Nov 20, 2023
From: RENDALL, MICHAEL EDWARD; GRUAR, ROBERT IAN JOSEPH
To: DYSON TECHNOLOGY LIMITED
Reel/Frame 065624/0420 →
Priority Claims (1)
GB 1916622 · Nov 15, 2019 · national
Continuity (1)
Related Publication 20220389586A1 · Dec 8, 2022
References Cited (186)
US 3829373A · Kuehnle · 1974 [cited by examiner]
US 4026787A · Kuehnle · 1977 [cited by applicant]
US 4278528A · Kuehnle et al. · 1981 [cited by applicant]
US 4492620A · Matsuo et al. · 1985 [cited by applicant]
US 4515107A · Fournier · 1985 [cited by examiner]
US 4849087A · Meyer · 1989 [cited by applicant]
US 4990229A · Campbell et al. · 1991 [cited by applicant]
US 5091049A · Campbell et al. · 1992 [cited by applicant]
US 5122251A · Campbell et al. · 1992 [cited by applicant]
US 5215638A · Hausler · 1993 [cited by applicant]
US 6066826A · Yializis · 2000 [cited by examiner]
US 6103070A · Hong · 2000 [cited by applicant]
US 6632563B1 · Krasnov et al. · 2003 [cited by applicant]
US 20010033952A1 · Jenson et al. · 2001 [cited by applicant]
US 20020144656A1 · Yoshikawa et al. · 2002 [cited by applicant]
US 20020175069A1 · Domoto et al. · 2002 [cited by applicant]
US 20040048157A1 · Neudecker et al. · 2004 [cited by applicant]
US 20040089535A1 · Wolfe et al. · 2004 [cited by applicant]
US 20040118678A1 · Hartig · 2004 [cited by applicant]
US 20060134522A1 · Zhang et al. · 2006 [cited by applicant]
US 20060196766A1 · Chen · 2006 [cited by applicant]
US 20070125638A1 · Zhang et al. · 2007 [cited by applicant]
US 20070166612A1 · Krasnov et al. · 2007 [cited by applicant]
US 20070181421A1 · Wei et al. · 2007 [cited by applicant]
US 20070187229A1 · Aksenov · 2007 [cited by examiner]
US 20080023146A1 · Shabalin · 2008 [cited by applicant]
US 20080035471A1 · Mikami et al. · 2008 [cited by applicant]
US 20090032191A1 · Chistyakov · 2009 [cited by applicant]
US 20090057136A1 · Wang et al. · 2009 [cited by applicant]
US 20090159429A1 · Tsukamoto · 2009 [cited by applicant]
US 20090159433A1 · Neudecker et al. · 2009 [cited by applicant]
US 20090159441A1 · Marunaka et al. · 2009 [cited by applicant]
US 20090277778A1 · Stowell et al. · 2009 [cited by applicant]
US 20090288943A1 · Kwak et al. · 2009 [cited by applicant]
US 20110117433A1 · Sabi et al. · 2011 [cited by applicant]
US 20110226617A1 · Hofmann et al. · 2011 [cited by applicant]
US 20110266141A1 · Drayton et al. · 2011 [cited by applicant]
US 20120275008A1 · Pradhan et al. · 2012 [cited by applicant]
US 20130112546A1 · Brown et al. · 2013 [cited by applicant]
US 20140183036A1 · Shao et al. · 2014 [cited by applicant]
US 20150016265A1 · Ahmadi · 2015 [cited by applicant]
US 20160233541A1 · Anapolsky et al. · 2016 [cited by applicant]
US 20170207071A1 · De Bosscher et al. · 2017 [cited by applicant]
US 20180245217A1 · Guo · 2018 [cited by applicant]
US 20190153589A1 · Puls et al. · 2019 [cited by applicant]
US 20200095672A1 · Honma et al. · 2020 [cited by applicant]
US 20210371297A1 · Perkins et al. · 2021 [cited by applicant]
US 20220277940A1 · Rendall · 2022 [cited by applicant]
US 20220380885A1 · Rendall et al. · 2022 [cited by applicant]
US 20220380903A1 · Rendall et al. · 2022 [cited by applicant]
US 20220384159A1 · Rendall et al. · 2022 [cited by applicant]
US 20220393142A1 · Gruar · 2022 [cited by applicant]
US 20220396865A1 · Rendall et al. · 2022 [cited by applicant]
US 20220396869A1 · Rendall · 2022 [cited by applicant]
US 20220403499A1 · Rendall et al. · 2022 [cited by applicant]
US 20220407043A1 · Rendall et al. · 2022 [cited by applicant]
US 20220411913A1 · Gruar · 2022 [cited by applicant]
US 20230220539A1 · Rendall et al. · 2023 [cited by applicant]
CN 101457343A · 2009 [cited by applicant]
CN 101527362A · 2009 [cited by applicant]
CN 101796213A · 2010 [cited by applicant]
CN 101903560A · 2010 [cited by applicant]
CN 101970709A · 2011 [cited by applicant]
CN 102037586A · 2011 [cited by applicant]
CN 105593395A · 2016 [cited by applicant]
CN 105874641A · 2016 [cited by applicant]
CN 105951053A · 2016 [cited by applicant]
CN 205803586U · 2016 [cited by applicant]
CN 106684325A · 2017 [cited by applicant]
CN 108281618A · 2018 [cited by applicant]
CN 109075006A · 2018 [cited by applicant]
CN 109402562A · 2019 [cited by applicant]
CN 109415802A · 2019 [cited by applicant]
CN 109415804A · 2019 [cited by applicant]
CN 109477203A · 2019 [cited by applicant]
CN 109844900A · 2019 [cited by applicant]
CN 110168130A · 2019 [cited by applicant]
CN 110349838A · 2019 [cited by applicant]
DE 4126236A1 · 1993 [cited by applicant]
DE 4418906A1 · 1995 [cited by applicant]
EP 0103461A2 · 1984 [cited by applicant]
EP 0403418A2 · 1990 [cited by applicant]
EP 0837490A2 · 1998 [cited by applicant]
EP 1729330A1 · 2006 [cited by applicant]
EP 2527487A1 · 2012 [cited by applicant]
EP 3396751A1 · 2018 [cited by applicant]
EP 3399539A1 · 2018 [cited by applicant]
GB 1462241A · 1977 [cited by applicant]
GB 0007173 · 2000 [cited by applicant]
GB 2360530A · 2001 [cited by applicant]
GB 2572610A · 2019 [cited by applicant]
JP 49101273A · 1974 [cited by applicant]
JP 61009575A · 1986 [cited by applicant]
JP 61093542A · 1986 [cited by applicant]
JP 03068773A · 1991 [cited by applicant]
JP H05171433A · 1993 [cited by applicant]
JP 10150210A · 1998 [cited by applicant]
JP H10510676A · 1998 [cited by applicant]
JP 11269643A · 1999 [cited by applicant]
JP 2002235171A · 2002 [cited by applicant]
JP 2003007291A · 2003 [cited by applicant]
JP 2004043934A · 2004 [cited by applicant]
JP 2006257546A · 2006 [cited by applicant]
JP 2006322055A · 2006 [cited by applicant]
JP 2007005219A · 2007 [cited by applicant]
JP 2007067183A · 2007 [cited by applicant]
JP 2008045213A · 2008 [cited by applicant]
JP 2008138229A · 2008 [cited by applicant]
JP 2011032550A · 2011 [cited by applicant]
JP 2011108532A · 2011 [cited by applicant]
JP 2011521433A · 2011 [cited by applicant]
JP 2011225932A · 2011 [cited by applicant]
JP 2013028824A · 2013 [cited by applicant]
JP 2013164971A · 2013 [cited by applicant]
JP 2015193863A · 2015 [cited by applicant]
JP 2015232158A · 2015 [cited by applicant]
JP 2017066429A · 2017 [cited by applicant]
JP 2017186581A · 2017 [cited by applicant]
JP 6215329B2 · 2017 [cited by applicant]
JP 2019104956A · 2019 [cited by applicant]
KR 1020060124978A · 2006 [cited by applicant]
KR 100762698B1 · 2007 [cited by applicant]
KR 1020080000736A · 2008 [cited by applicant]
KR 1020110092965A · 2011 [cited by applicant]
KR 1020150005262A · 2015 [cited by applicant]
KR 20180049257A · 2018 [cited by applicant]
KR 101990881B1 · 2019 [cited by applicant]
KR 20190065233A · 2019 [cited by applicant]
WO 8907664A1 · 1989 [cited by applicant]
WO 0221627A2 · 2002 [cited by applicant]
WO 2004017356A2 · 2004 [cited by applicant]
WO 2009143254A2 · 2009 [cited by applicant]
WO 2010023878A1 · 2010 [cited by applicant]
WO 2010144761A2 · 2010 [cited by applicant]
WO 2011131921A1 · 2011 [cited by applicant]
WO 2014156129A1 · 2014 [cited by applicant]
WO 2016078693A1 · 2016 [cited by applicant]
WO 2018001523A1 · 2018 [cited by applicant]
WO 2018128009A1 · 2018 [cited by applicant]
WO 2018202656A1 · 2018 [cited by applicant]
WO 2018225822A1 · 2018 [cited by applicant]
WO 2019181095A1 · 2019 [cited by applicant]
WO 2021094721A1 · 2021 [cited by applicant]
WO 2021094772A1 · 2021 [cited by applicant]
Kikuchi et al., “Modification of Film Structure in Sputtering Process,” Journal of the Vacuum Society of Japan, vol. 50, No. 1, 2007, pp. 14-21. [cited by applicant]
Office Action received for Japanese Patent Application No. 2022-528173, mailed on Aug. 1, 2023, 4 pages (2 pages of English Translation and 2 pages of Original Document). [cited by applicant]
Office Action received for Japanese Patent Application No. 2022-528178, mailed on Aug. 8, 2023, 6 pages (3 pages of English Translation and 3 pages of Original Document). [cited by applicant]
Office Action received for Japanese Patent Application No. 2022-528188, mailed on Aug. 8, 2023, 6 pages (3 pages of English Translation and 3 pages of Original Document). [cited by applicant]
Office Action received for Japanese Patent Application No. 2022-528189, mailed on Aug. 8, 2023, 6 pages (3 pages of English Translation and 3 pages of Original Document). [cited by applicant]
Office Action received for Japanese Patent Application No. 2022-528195, mailed on Oct. 17, 2023, 10 pages (6 pages of English Translation and 4 pages of Original Document). [cited by applicant]
International Search Report and Written Opinion received for PCT Patent Application No. PCT/GB2020/052838, mailed on Feb. 18, 2021, 9 pages. [cited by applicant]
International Search Report and Written Opinion received for PCT Patent Application No. PCT/GB2020/052893, mailed on Feb. 22, 2021, 11 pages. [cited by applicant]
International Search Report and Written Opinion received for PCT Patent Application No. PCT/GB2020/052896, mailed on Feb. 22, 2021, 10 pages. [cited by applicant]
Ribeiro, J. F., et al. “Lithium cobalt oxide crystallization on flexible polyimide substrate.” Journal of Materials Science: Materials in Electronics 27 (2016): 631-636. [cited by applicant]
Office Action received for Japanese Patent Application No. 2022-528153, mailed on Jul. 25, 2023, 7 pages (3 pages of English Translation and 4 pages of Original Document). [cited by applicant]
Akazawa, “Highly adhesive Pt-electrode films directly deposited on SiO2 by electron-cyclotron-resonance plasma sputtering”, Surface & Coatings Technology, vol. 204, 2010, pp. 1836-1841. [cited by applicant]
Combined Search and Examination Report Received for GB Application No. 1916628.9, mailed on May 5, 2020, 6 pages. [cited by applicant]
Combined Search and Examination Report Received for GB Application No. 1916632.1, mailed on May 5, 2020, 3 pages. [cited by applicant]
Combined Search and Examination Report Received for GB Application No. 1916633.9, mailed on May 4, 2020, 3 pages. [cited by applicant]
Combined Search and Examination Report Received for GB Application No. 1916634.7, mailed on May 15, 2020, 3 pages. [cited by applicant]
Combined Search and Examination Report Received for GB Application No. 1916635.4, mailed on May 5, 2020, 4 pages. [cited by applicant]
GB Search Report received for Application No. 1916619.8, mailed on May 7, 2020, 1 page. [cited by applicant]
GB Search Report received for Application No. 1916622.2, mailed on Mar. 30, 2020, 1 page. [cited by applicant]
GB Search Report received for Application No. 1916624.8, mailed on Apr. 29, 2020, 1 Page. [cited by applicant]
GB Search Report Received for GB Application No. 1916626.3, mailed on May 12, 2020, 1 page. [cited by applicant]
GB Search Report Received for GB Application No. 1916629.7, mailed on May 15, 2020, 1 page. [cited by applicant]
GB Search Report received for Patent Application No. 1916627.1, mailed on May 12, 2020, 1 page. [cited by applicant]
GB Search Report received for Patent Application No. 1916637.0, mailed on Mar. 30, 2020, 1 Page. [cited by applicant]
Hayashi et al., “Preparation of positive LiCoO2 films by electron cyclotron resonance (ECR) plasma sputtering method and its application to all-solid-state thin-film lithium batteries”, Journal of Power Sources vol. 174… [cited by applicant]
International Search Report and Written Opinion received for PCT Patent Application No. PCT/GB20/052837, mailed on Feb. 12, 2021, 11 pages. [cited by applicant]
International Search Report and Written Opinion received for PCT Patent Application No. PCT/GB2020/052839, mailed on Feb. 23, 2021, 11 pages. [cited by applicant]
International Search Report and Written Opinion received for PCT Patent Application No. PCT/GB2020/052840, mailed on Feb. 25, 2021, 11 pages. [cited by applicant]
International Search Report and Written Opinion received for PCT Patent Application No. PCT/GB2020/052841, mailed on Mar. 1, 2021, 13 pages. [cited by applicant]
International Search Report and Written Opinion received for PCT Patent Application No. PCT/GB2020/052842, mailed on Feb. 25, 2021, 11 pages. [cited by applicant]
International Search Report and Written Opinion received for PCT Patent Application No. PCT/GB2020/052843, mailed on Feb. 26, 2021, 13 pages. [cited by applicant]
International Search Report and Written Opinion received for PCT Patent Application No. PCT/GB2020/052844, mailed on Feb. 18, 2021, 12 pages. [cited by applicant]
International Search Report and Written Opinion received for PCT Patent Application No. PCT/GB2020/052848, mailed on Dec. 23, 2020, 10 pages. [cited by applicant]
International Search Report and Written Opinion received for PCT Patent Application No. PCT/GB2020/052892, mailed on Feb. 25, 2021, 12 pages. [cited by applicant]
International Search Report and Written Opinion received for PCT Patent Application No. PCT/GB2020/052894, mailed on Mar. 9, 2021, 13 pages. [cited by applicant]
International Search Report and Written Opinion received for PCT Patent Application No. PCT/GB2020/052895, mailed on Mar. 5, 2021, 12 pages. [cited by applicant]
International Search Report and Written Opinion received for PCT Patent Application No. PCT/GB2020/052897, mailed on Mar. 3, 2021, 12 pages. [cited by applicant]
Julien E. et al., “Sputtered LiCoO2 Cathode Materials for All-solid-state Thin-film Lithium Microbatteries,” Materials, vol. 12, No. 17, 2019, 2687, pp. 26. [cited by applicant]
Knox-Davies et al., “Properties of nanocrystalline GaN films deposited by reactive sputtering,” Diamond and Related Materials, Elsevier Science Publishers, vol. 12, No. 8, 2003, pp. 1417-1421. [cited by applicant]
Office Action received for Japanese Patent Application No. 2022-528191, mailed on Jun. 27, 2023, 14 pages (8 pages of English Translation and 6 pages of Original Document). [cited by applicant]
Office Action received for Japanese Patent Application No. 2022-528195, mailed on Jun. 27, 2023, 11 pages (6 pages of English Translation and 5 pages of Original Document). [cited by applicant]
Office Action received for Japanese Patent Application No. 2022-528167, mailed on Aug. 29, 2023, 2 pages of Original Document Only. [cited by applicant]