Granted Patent B2

US 12,548,756 · App. 17/776,746 · Granted Feb 10, 2026

Inventors: Michael Edward Rendall (Newbury, GB); Robert Ian Joseph Gruar (Swindon, GB)

Assignee: Dyson Technology Limited

H01M4/0426C23C14/0036C23C14/0676C23C14/085C23C14/3464C23C14/562H01J37/32357H01J37/3417H01J37/3429H01M4/131H01M4/1391H01M4/366H01M4/525H01M10/0525H01M10/0562H01J2237/332H01M2004/028H01M2300/0068

Abstract

Claims (22)

1 . A method of manufacturing a crystalline layer of material on a surface, the crystalline layer comprising lithium, at least one transition metal and at least one counter-ion, wherein the method comprises the following steps:

generating a plasma using a remote plasma generator,

plasma sputtering material from a first target comprising lithium onto a surface of or supported by a substrate, there being at least a first plume corresponding to trajectories of particles from the first target onto the surface, and

plasma sputtering material from a second target comprising at least one transition metal onto the surface, there being at least a second plume corresponding to trajectories of particles from the second target onto the surface,

wherein the first target is positioned to be non-parallel with the second target, wherein the first target faces towards the substrate in a first direction, and the second target faces towards the substrate in a second direction, the first and second directions converging towards the substrate, wherein a first notional line parallel to the first direction which extends from the center of a surface of the first target facing the substrate intersects, in the cross-section, a second notional line parallel to the second direction which extends from the center of a surface of the second target facing the substrate, at a location on a side of the substrate opposite to a front side of the substrate facing the targets;

wherein the first plume and the second plume converge at a region proximate to the surface of or supported by the substrate, and

wherein the crystalline layer is formed on the surface at said region.

2 . The method according to claim 1 , wherein more plasma energy is received at the first target than at the second target.

3 . The method according to claim 1 , wherein at least one of the substrate and the first and second targets are moving as crystalline layer is being formed on the surface.

4 . The method according to claim 1 , wherein the substrate has a radius of curvature at the region at which the first plume and the second plume converge and the targets are arranged circumferentially around the center of the radius of curvature.

5 . The method according to claim 1 , wherein at least part of the substrate is carried by a rotating drum.

6 . The method according to claim 1 , wherein the working distance between the first target and the substrate is within +/−50% of the theoretical mean free path of the system.

7 . The method according to claim 1 , wherein the working distance between the first target and the substrate is from 1 cm to 50 cm.

8 . The method according to claim 1 , wherein the surfaces facing the substrate of the first and second targets are planar.

9 . The method according to claim 1 , wherein plasma is shaped to form a sheet of plasma that extends in a direction along the width of the substrate and in a direction along the length of the substrate.

10 . The method according to claim 1 , wherein the second target comprises at least one transition metal selected from the group consisting of Fe, Co, Mn, Ni, Ti, Nb, Al and V.

11 . The method according to claim 1 , wherein the substrate has a thickness of from 0.1 to 10 μm.

12 . The method according to claim 1 , wherein the crystalline layer formed on the surface has a thickness of from 0.001 to 10 μm.

13 . The method according to claim 1 , wherein the steps of sputtering material onto the surface are so performed that the maximum temperature reached at any given time by any given square of substrate material having an area of 1 cm 2 , as measured on the surface opposite to said surface on which the material is deposited and as averaged over a period of 1 second, is no more than 500 degrees Celsius.

14 . A method of manufacturing an electronic component including forming a multilayer sheet of different materials, integrating the multilayer sheet or a part thereof in an electronic product, wherein at least one of the layers of the sheet is a crystalline layer of conducting or semiconducting material made by performing the method of claim 1 .

15 . The method according to claim 14 , wherein the substrate is retained as a part of the electronic component.

16 . The method according to claim 15 , wherein the electronic component is a battery, a functional layer of a battery, an energy storage device or a cell of battery.

Assignments (1)

Priority Claims (1)

Continuity (1)

References Cited (192)