IP Library › Granted Patent US 12,542,533
Granted Patent B2
US 12,542,533 · App. 17/816,989 · Granted Feb 3, 2026

Packaged surface acoustic wave device with conductive roof supporting structure

Inventors: Hironori Fukuhara (Ibaraki, JP); Rei Goto (Osaka, JP); Keiichi Maki (Suita, JP)
Assignee: Skyworks Solutions, Inc.
H03H9/25H03H3/08H03H9/02574H03H9/1071H03H9/1092H03H9/145H03H9/64
View Patent ↗
Loading inventors, assignments & file history…
Monitor This Case
Get email alerts when status or documents change.
Order Certified Copies
Most orders are placed with the USPTO same day — all within 24 business hours.
Order via The Patent Place →
Pre-filled with this patent's details
Quick Facts
Patent No.
US 12,542,533
App. No.
17/816,989
Granted
Feb 3, 2026
Kind
B2
Abstract

A packaged surface acoustic wave device is disclosed. The packaged surface acoustic wave device can include a support substrate that has a first side and a second side opposite the first side. The support substrate including a conductive via extending vertically between the first side to the second side. The packaged surface acoustic wave device can include a piezoelectric layer over the first side of the support substrate, an interdigital transducer electrode over the piezoelectric layer, a roof structure over the interdigital transducer electrode, and a conductive pillar between the first side of the support substrate and the roof structure. The conductive pillar supports the roof structure and defines at least a portion of an electrical pathway between the interdigital transducer electrode and the conductive via. A maximum horizontal dimension of the conductive pillar is greater than a maximum horizontal dimension of the conductive via.

Claims (29)

1 . A packaged surface acoustic wave device comprising:

a support substrate having a first side and a second side opposite the first side, the support substrate including a conductive via extending vertically between the first side to the second side;

a piezoelectric layer over the first side of the support substrate;

an interdigital transducer electrode over the piezoelectric layer;

a roof structure over the interdigital transducer electrode; and

a conductive pillar disposed between the first side of the support substrate and the roof structure, the conductive pillar supporting the roof structure, a maximum horizontal dimension of the conductive pillar being greater than a maximum horizontal dimension of the conductive via.

2 . The packaged surface acoustic wave device of claim 1 wherein the conductive pillar defines at least a portion of an electrical pathway between the interdigital transducer electrode and the conductive via.

3 . The packaged surface acoustic wave device of claim 1 wherein the maximum horizontal dimension of the conductive pillar is at least three times greater than the maximum horizontal dimension of the conductive via.

4 . The packaged surface acoustic wave device of claim 1 wherein the roof structure is configured such that there is no signal communication between the conductive pillar and the roof structure, and the roof structure does not include any electronic component mounted thereon.

5 . The packaged surface acoustic wave device of claim 1 wherein the roof structure and the support substrate includes the same material.

6 . The packaged surface acoustic wave device of claim 1 wherein the roof structure includes resin.

7 . The packaged surface acoustic wave device of claim 1 further comprising a dielectric layer disposed between the support substrate and the piezoelectric layer.

8 . The packaged surface acoustic wave device of claim 1 further comprising a conductive structure disposed between and connecting the interdigital transducer electrode and the conductive pillar.

9 . The packaged surface acoustic wave device of claim 8 further comprising a second interdigital transducer electrode over the piezoelectric layer.

10 . The packaged surface acoustic wave device of claim 9 further comprising a second conductive structure electrically connecting the interdigital transducer electrode and the second interdigital transducer electrode.

11 . The packaged surface acoustic wave device of claim 10 further comprising a second conductive pillar disposed between the second conductive structure and the roof structure, the second conductive pillar configured to dissipate heat generated by the interdigital transducer electrode.

12 . The packaged surface acoustic wave device of claim 11 further comprising a third conductive pillar supporting the roof structure relative to the support substrate and a third conductive structure electrically connecting the second interdigital transducer electrode and the third conductive pillar, wherein the support substrate includes a second conductive via formed therein, the third conductive pillar defining at least a portion of an electrical pathway between the second interdigital transducer electrode and the second conductive via.

13 . The packaged surface acoustic wave device of claim 1 wherein the interdigital transducer electrode is positioned in a cavity defined between the support substrate and the roof structure, the cavity is sealed by a cavity seal disposed laterally around the interdigital transducer electrode.

14 . The packaged surface acoustic wave device of claim 13 wherein the conductive pillar and the cavity seal includes the same material.

15 . The packaged surface acoustic wave device of claim 1 wherein the piezoelectric layer is partially disposed over the support substrate.

16 . The packaged surface acoustic wave device of claim 1 wherein the conductive via extends vertically through the support substrate, and a maximum horizontal dimension of the conductive pillar being greater than a maximum horizontal dimension of the conductive via.

17 . The packaged surface acoustic wave device of claim 1 wherein the conductive pillar is positioned directly over the conductive via.

18 . A packaged surface acoustic wave device comprising:

a multilayer piezoelectric substrate having a first side and a second side opposite the first side, the support substrate including a conductive a via extending vertically between the first side to the second side, the multilayer piezoelectric substrate including a support substrate and a piezoelectric layer over the support substrate;

an interdigital transducer electrode over the piezoelectric layer;

a roof structure over the interdigital transducer electrode; and

a conductive support structure disposed between the multilayer piezoelectric substrate and the roof structure, the conductive support structure supporting the roof structure, a maximum horizontal dimension of the conductive pillar being greater than a maximum horizontal dimension of the conductive via.

19 . The packaged surface acoustic wave device of claim 18 wherein the conductive support structure defines at least a portion of an electrical pathway between the interdigital transducer electrode and the conductive via.

20 . The packaged surface acoustic wave device of claim 18 wherein the interdigital transducer electrode is positioned in a cavity defined between the support substrate and the roof structure, the cavity is sealed by a cavity seal disposed laterally around the interdigital transducer electrode.

Assignments (1)
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Aug 27, 2023
From: FUKUHARA, HIRONORI; GOTO, REI; MAKI, KEIICHI
To: SKYWORKS SOLUTIONS, INC.
Reel/Frame 064712/0810 →
Continuity (4)
Provisional Application 63237894 · Aug 27, 2021
Provisional Application 63237942 · Aug 27, 2021
Provisional Application 63237905 · Aug 27, 2021
Related Publication 20230066822A1 · Mar 2, 2023
References Cited (53)
US 8008837B2 · Fukano et al. · 2011 [cited by applicant]
US 8405199B2 · Lu et al. · 2013 [cited by applicant]
US 8471441B2 · Tsuda · 2013 [cited by applicant]
US 8531254B2 · Yamaji et al. · 2013 [cited by applicant]
US 8975803B2 · Fukano et al. · 2015 [cited by applicant]
US 9021669B2 · Fukano · 2015 [cited by applicant]
US 9270252B2 · Nishii et al. · 2016 [cited by applicant]
US 9312230B2 · Chen et al. · 2016 [cited by applicant]
US 9831849B2 · Lee · 2017 [cited by applicant]
US 9882540B2 · Fukano · 2018 [cited by applicant]
US 10153736B2 · King et al. · 2018 [cited by applicant]
US 10298199B2 · Park et al. · 2019 [cited by applicant]
US 10333493B2 · Nagarkar et al. · 2019 [cited by applicant]
US 10340883B2 · Sugaya · 2019 [cited by applicant]
US 10483942B2 · Goto et al. · 2019 [cited by applicant]
US 10944377B2 · Hosagavi et al. · 2021 [cited by applicant]
US 10999932B2 · Takano et al. · 2021 [cited by applicant]
US 11057015B2 · Kawasaki · 2021 [cited by applicant]
US 11323073B2 · King et al. · 2022 [cited by applicant]
US 11626854B2 · Hosagavi et al. · 2023 [cited by applicant]
US 11757426B2 · Hsu · 2023 [cited by examiner]
US 20170288123A1 · Hatano et al. · 2017 [cited by applicant]
US 20170331455A1 · Kuroyanagi · 2017 [cited by applicant]
US 20180013404A1 · Kawasaki et al. · 2018 [cited by applicant]
US 20180159503A1 · Takano · 2018 [cited by applicant]
US 20190019939A1 · Park et al. · 2019 [cited by applicant]
US 20190393857A1 · Iwamoto · 2019 [cited by applicant]
US 20200035654A1 · Chen et al. · 2020 [cited by applicant]
US 20200076398A1 · Koo et al. · 2020 [cited by applicant]
US 20200076399A1 · Koo et al. · 2020 [cited by applicant]
US 20200076400A1 · Koo et al. · 2020 [cited by applicant]
US 20200076402A1 · Koo et al. · 2020 [cited by applicant]
US 20200112297A1 · Nomiya · 2020 [cited by applicant]
US 20200168520A1 · Iwamoto · 2020 [cited by applicant]
US 20200185354A1 · Iwamoto · 2020 [cited by applicant]
US 20200212875A1 · Goto et al. · 2020 [cited by applicant]
US 20200212883A1 · Goto et al. · 2020 [cited by applicant]
US 20210013865A1 · Shih et al. · 2021 [cited by applicant]
US 20210028767A1 · Sugaya · 2021 [cited by applicant]
US 20210099157A1 · Takano et al. · 2021 [cited by applicant]
US 20210159882A1 · Lee et al. · 2021 [cited by applicant]
US 20230046261A1 · Yu et al. · 2023 [cited by applicant]
US 20230062981A1 · Fukuhara et al. · 2023 [cited by applicant]
US 20230069327A1 · Fukuhara et al. · 2023 [cited by applicant]
US 20230361748A1 · Hosagavi et al. · 2023 [cited by applicant]
US 20240171136A1 · Hosagavi et al. · 2024 [cited by applicant]
CN 106688180 · 2019 [cited by applicant]
CN 110380703 · 2019 [cited by applicant]
CN 111371429 · 2020 [cited by applicant]
JP 2008245310 · 2008 [cited by applicant]
JP 2016066989 · 2016 [cited by applicant]
KR 1336150 · 2013 [cited by applicant]
KR 1354977 · 2014 [cited by applicant]