Semiconductor integrated circuit device and wearable device
To provide a semiconductor device which can be stably operated while achieving a reduction of the power consumption. A semiconductor device includes a CPU, a system controller which designates an operation speed of the CPU, P-type SOTB transistors, and N-type SOTB transistors. The semiconductor device is provided with an SRAM which is connected to the CPU, and a substrate bias circuit which is connected to the system controller and is capable of supplying substrate bias voltages to the P-type SOTB transistors and the N-type SOTB transistors. Here, when the system controller designates a low speed mode to operate the CPU at a low speed, the substrate bias circuit supplies the substrate bias voltages to the P-type SOTB transistors and the N-type SOTB transistors.
1. A semiconductor integrated circuit device comprising:
a first circuit including a P-type transistor and an N-type transistor;
a second circuit including a P-type SOTB transistor and an N-type SOTB transistor; and
a voltage supplying circuit for supplying a voltage to the first circuit and the second circuit,
wherein the P-type SOTB transistor includes a first gate electrode, a first source region, a first drain region, a first channel region, which is arranged between the first source region and the first drain region and in which a channel is formed, a first insulation film, and a first region which faces the first channel region through the first insulation film,
wherein the N-type SOTB transistor includes a second gate electrode, a second source region, a second drain region, a second channel region, which is arranged between the second source region and the second drain region and in which a channel is formed, a second insulation film, and a second region which faces the second channel region through the second insulation film,
wherein the first circuit includes an input/output circuit,
wherein the second circuit includes a memory cell,
wherein the semiconductor integrated circuit device has a first operation mode and a second operation mode,
wherein the voltage supplying circuit outputs a first voltage and a second voltage, and
wherein, in the first operation mode, the first voltage is supplied to the first region of the P-type SOTB transistor and the second voltage is supplied to the second region of the N-type SOTB transistor.
2. The semiconductor integrated circuit device according to claim 1 ,
wherein the P-type transistor includes a third gate electrode, a third source region, a third drain region, a third channel region, which is arranged between the third source region and the third drain region and in which a channel is formed, and a third region formed under the third channel region, and
wherein an impurity concentration of the first channel region is lower than an impurity concentration of the third channel region.
3. The semiconductor integrated circuit device according to claim 2 ,
wherein the N-type transistor includes a fourth gate electrode, a fourth source region, a fourth drain region, a fourth channel region, which is arranged between the fourth source region and the fourth drain region and in which a channel is formed, and a fourth region formed under the fourth channel region, and
wherein an impurity concentration of the second channel region is lower than an impurity concentration of the fourth channel region.
4. The semiconductor integrated circuit device according to claim 1 ,
wherein the first voltage is different from the second voltage.
5. The semiconductor integrated circuit device according to claim 3 , further comprising an SRAM,
wherein the SRAM includes the memory cell and a peripheral circuit connected to the memory cell.
6. The semiconductor integrated circuit device according to claim 5 ,
wherein an operation frequency of the first operation mode is lower than an operation frequency of the second operation mode.