Semiconductor device and manufacturing method thereof
A device incudes a substrate. A first fin and a second fin are over the substrate. An isolation structure is laterally between the first fin and the second fin. A gate structure crosses the first fin and the second fin. A first source/drain epitaxy structure is over the first fin. A second source/drain epitaxy structure is over the second fin. A spacer layer extends from a first sidewall of the first fin to a first sidewall of the second fin along a top surface of the isolation structure.
1. A device, comprising:
a substrate;
a first fin and a second fin over the substrate;
an isolation structure laterally between the first fin and the second fin;
a gate structure crossing the first fin and the second fin;
a first source/drain epitaxy structure over the first fin;
a second source/drain epitaxy structure over the second fin; and
a spacer layer extending from a first sidewall of the first fin to a first sidewall of the second fin along a top surface of the isolation structure, wherein the first source/drain epitaxy structure is in contact with the spacer layer.
2. The device of claim 1 , further comprising a dielectric material over the spacer layer.
3. The device of claim 2 , wherein a top surface of the dielectric material is lower than a top surface of the first source/drain epitaxy structure.
4. The device of claim 2 , wherein the dielectric material is in contact with the first source/drain epitaxy structure.
5. The device of claim 1 , wherein the first source/drain epitaxy structure has a first portion in contact with the first sidewall of the first fin and a second portion in contact with a second sidewall of the first fin, the first sidewall of the first fin is opposite to the second sidewall of the first fin, and wherein a bottom surface of the first portion of the first source/drain epitaxy structure is lower than a bottom surface of the second portion of the first source/drain epitaxy structure.
6. The device of claim 5 , wherein the first portion of the first source/drain epitaxy structure is wider than the second portion of the first source/drain epitaxy structure.
7. The device of claim 1 , wherein the spacer layer has a portion vertically between the first source/drain epitaxy structure and the isolation structure.
8. A device, comprising:
a substrate;
a first fin and a second fin over the substrate;
isolation structures over the substrate having a portion laterally between the first fin and the second fin;
a gate structure crossing the first fin and the second fin;
a first source/drain epitaxy structure over the first fin and vertically separated from the portion of the isolation structure;
a second source/drain epitaxy structure over the second fin and vertically separated from the portion of the isolation structure; and
a dielectric material in contact with the first and second source/drain epitaxy structures, and vertically separated from the portion of the isolation structure.
9. The device of claim 8 , wherein the portion of the isolation structures is separated from the first source/drain epitaxy structure and the second source/drain epitaxy structure.
10. The device of claim 8 , further comprising a spacer layer between the dielectric material and the portion of the isolation structures.
11. The device of claim 10 , wherein the spacer layer is in contact with the first fin and the first source/drain epitaxy structure.
12. The device of claim 11 , wherein an interface between the spacer layer and the first source/drain epitaxy structure is at a level lower than a top surface of the first fin.
13. The device of claim 8 , wherein a top surface of the dielectric material is lower than a top surface of the first fin.
14. A device, comprising:
a substrate;
a first fin and a second fin over the substrate;
isolation structures over the substrate having a portion laterally between the first fin and the second fin;
a gate structure crossing the first fin and the second fin;
a first source/drain epitaxy structure over the first fin;
a second source/drain epitaxy structure over the second fin;
a spacer layer in contact with the first and second source/drain epitaxy structures and the portion of the isolation structures; and
a dielectric material over the spacer layer and in contact with the first and second source/drain epitaxy structures.
15. The device of claim 14 , wherein the dielectric material is separated from the portion of the isolation structures by the spacer layer.
16. The device of claim 14 , wherein the dielectric material passes an interface between the first source/drain epitaxy structure and the spacer layer.
17. The device of claim 14 , wherein the spacer layer has an U-shape cross-section.
18. The device of claim 14 , wherein a top surface of the dielectric material is higher than a topmost end of the spacer layer, and a bottom surface of the dielectric material is lower than the topmost end of the spacer layer.
19. The device of claim 14 , wherein the first source/drain epitaxy structure has a first portion in contact with a first sidewall of the first fin and a second portion in contact with a second sidewall of the first fin, the first sidewall of the first fin is opposite to the second sidewall of the first fin, and wherein a bottom surface of the first portion of the first source/drain epitaxy structure is lower than a bottom surface of the second portion of the first source/drain epitaxy structure.
20. The device of claim 1 , wherein the first source/drain epitaxy structure and the spacer layer both extend along the first sidewall of the first fin.