Granted Patent B2

US 12,751,321 · App. 17/853,776 · Granted Sep 29, 2026

Inventor: Young Do Kweon (Chandler, AZ)

Assignee: Amkor Technology Singapore Holding Pte. Ltd.

H10W90/00H10W40/037H10W40/251H10W40/258H10W40/77H10W72/07338H10W72/387H10W74/15H10W76/12H10W76/60H10W76/63H10W76/67H10W90/724H10W90/734

Abstract

Claims (124)

1 . An electronic device, comprising:

a substrate comprising a substrate top side and a substrate bottom side opposite to the substrate top side;

a first electronic component coupled to the substrate top side and comprising a first electronic component top side distal to the substrate top side;

a second electronic component coupled to the substrate top side, laterally spaced apart from the first electronic component, and comprising a second electronic component top side distal to the substrate top side;

a lid coupled to the substrate top side, covering the first electronic component and the second electronic component, and comprising:

a lid ceiling; and

a lid wall extending from the lid ceiling and defining a lid periphery;

a multi-part dam structure forming a sealed perimeter around the first electronic component except for a vent, the multi-part dam structure comprising:

a component dam comprising a first material and bonded to the first electronic component top side, the component dam comprising a component dam top side; and

a lid dam comprising a second material and bonded to the lid ceiling, the lid dam comprising a lid dam bottom side, wherein the lid dam is vertically aligned with and vertically overlaps the component dam such that the component dam top side and the lid dam bottom side contact each other along a closed interface to form the sealed perimeter, and wherein the lid dam vertically separates the component dam from the lid, and wherein the component dam vertically separates the lid dam from the first electronic component;

a first interface material over the first electronic component top side and contained within the multi-part dam structure; and

a second interface material over the second electronic component top side and coupled to the lid ceiling;

wherein:

the first interface material comprises a first thermal conductivity;

the second interface material comprises a second thermal conductivity different than the first thermal conductivity; and

the sealed perimeter formed by the lid dam and the component dam is configured to prevent cross-migration of the first interface material toward the second interface material during curing.

2 . The electronic device of claim 1 , wherein:

the first interface material directly contacts the lid dam;

the component dam comprises a lateral side;

the vent extends through the lateral side of the component dam; and

the lid dam is devoid of the vent.

3 . The electronic device of claim 1 , wherein:

the lid dam comprises a first width in a cross-sectional view;

the component dam comprises a second width in the cross-sectional view less than the first width;

the first material is different than the second material;

the difference in width exposes a portion of the component dam top side; and

the first interface material contacts the portion of the component dam top side.

4 . The electronic device of claim 1 , wherein:

the first material and the second material are different materials;

the lid dam comprises a larger planar area than the component dam; and

the lid dam laterally extends into a portion of the second interface material.

5 . The electronic device of claim 1 , wherein:

the component dam comprises a first shape comprising three interconnected walls that are each directly bonded to the first electronic component and forming a C-shaped structure with an open side;

the open side defines the vent;

the lid dam comprises a second shape comprising four interconnected walls forming a closed rectangular ring; and

one of the four interconnected walls of the lid dam spans over the open side of the component dam above the vent.

6 . The electronic device of claim 1 , further comprising:

a lid metallization between the first interface material and the lid ceiling; and

a component metallization on the first electronic component top side between the first electronic component and the first interface material, wherein the lid metallization has a larger area than the component metallization.

7 . The electronic device of claim 6 , wherein:

the first interface material is an indium alloy thermal interface material; and

the second electronic component top side is devoid of any component metallization.

8 . The electronic device of claim 1 , wherein:

the component dam is a printed structure; and

the lid dam is a film structure.

9 . The electronic device of claim 1 , further comprising:

a component metallization;

wherein:

the first electronic component top side comprises an outer periphery; and

the component metallization is only inside the outer periphery.

10 . The electronic device of claim 1 , wherein:

the component dam comprises a first lateral side that is distal to the second electronic component and a second lateral side opposite the first lateral side and proximate to the second electronic component;

the vent extends through the first lateral side of the component dam and is configured to laterally direct overflow of the first interface material away from the second electronic component; and

the second lateral side and the lid dam together form a continuous barrier configured to physically separate the first interface material from the second interface material and to restrict the overflow of the first interface material toward the second interface material during curing.

11 . The electronic device of claim 10 , wherein:

the second interface material contacts the second lateral side of the component dam and the lid dam.

12 . The electronic device of claim 1 , wherein:

the first interface material comprises a metal thermal interface material and the first thermal conductivity is greater than 10 W/mK; and

the second interface material comprises a polymer thermal interface material and the second thermal conductivity type-less than 5 W/mK.

13 . An electronic device, comprising:

a substrate comprising a substrate top side, a substrate bottom side opposite to the substrate top side and comprising a substrate dielectric structure and a substrate conductive structure;

a first electronic component coupled to the substrate conductive structure at the substrate top side and comprising a first electronic component top side distal to the substrate top side;

a second electronic component coupled to the substrate conductive structure at the substrate top side, laterally spaced apart from the first electronic component, and comprising a second electronic component top side distal to the substrate top side;

a component dam coupled to the first electronic component top side and defining a component dam cavity, wherein the component dam comprises a component dam top side;

an enclosure coupled to the substrate and over the first electronic component and the second electronic component, the enclosure comprising:

an enclosure ceiling;

an enclosure wall extending from the enclosure ceiling and defining an enclosure periphery; and

an enclosure dam within the enclosure periphery and coupled to the enclosure ceiling and the component dam and defining an enclosure dam cavity, wherein the enclosure dam comprises enclosure dam bottom side;

a first interface material over the first electronic component top side and within the component dam cavity and the enclosure dam cavity; and

a second interface material over the second electronic component top side;

wherein:

the first interface material comprises a first thermal conductivity;

the second interface material comprises a second thermal conductivity different than the first thermal conductivity;

the enclosure dam comprises a larger planar area than the component dam and the enclosure dam is vertically aligned with and vertically overlaps the component dam to form a nested enclosure;

the enclosure dam laterally extends into a portion of the second interface material; and

the enclosure dam bottom side is attached to the component dam top side such that the enclosure dam and the component dam form a continuous barrier configured to physically separate the first interface material from the second interface material and to restrict overflow of the first interface material toward the second interface material during curing.

14 . The electronic device of claim 13 , further comprising:

a vent;

wherein:

the component dam comprises a first lateral side that is distal to the second electronic component and a second lateral side opposite the first lateral side and proximate to the second electronic component;

the vent extends through the first lateral side of the component dam and is configured to laterally direct the overflow of the first interface material away from the second electronic component;

the enclosure dam is devoid of the vent; and

the second lateral side and the enclosure dam together form the continuous barrier.

15 . The electronic device of claim 13 , further comprising:

an enclosure metallization within the enclosure dam cavity; and

a component metallization on the first electronic component top side between the first electronic component and the first interface material, wherein:

the second electronic component top side is devoid of any component metallization; and

the enclosure metallization has a larger area than the component metallization.

16 . The electronic device of claim 13 , wherein:

the first interface material comprises a metal interface material;

the second interface material comprises a polymer interface material;

the first thermal conductivity is greater than 10 W/mK; and

the second thermal conductivity is less than 5 W/mK.

17 . A method of manufacturing an electronic device, comprising:

providing a substrate comprising a substrate top side, a substrate bottom side opposite to the substrate top side and comprising a substrate dielectric structure and a substrate conductive structure;

coupling a first electronic component to the substrate conductive structure at the substrate top side, the first electronic component comprising a first electronic component top side distal to the substrate top side and a component dam coupled to the first electronic component top side that defines a component dam cavity, wherein the component dam comprises a component dam top side;

coupling a second electronic component to the substrate conductive structure at the substrate top side, laterally spaced apart from the first electronic component, and comprising a second electronic component top side distal to the substrate top side devoid of any dam structure;

providing a first interface material over the first electronic component top side and within the component dam cavity;

providing a second interface material over the second electronic component top side;

providing an enclosure comprising:

an enclosure ceiling;

an enclosure wall extending from the enclosure ceiling and defining an enclosure periphery; and

an enclosure dam within the enclosure periphery and coupled to the enclosure ceiling and the component dam and defining an enclosure dam cavity, wherein the enclosure dam comprises an enclosure dam bottom side;

coupling the enclosure to the substrate over the first electronic component and the second electronic component; and

curing the first interface material and the second interface material;

wherein:

the first interface material comprises a first thermal conductivity;

the second interface material comprises a second thermal conductivity different than the first thermal conductivity;

the enclosure dam comprises a larger planar area than the component dam and the enclosure dam is vertically aligned with and vertically overlaps the component dam to form a nested enclosure;

the enclosure dam laterally extends into a portion of the second interface material; and

the enclosure dam bottom side is attached to the component dam top side such that the enclosure dam and the component dam form a continuous barrier configured to physically separate the first interface material from the second interface material and to restrict overflow of the first interface material toward the second interface material during the curing.

18 . The method of claim 17 , wherein:

providing the first interface material comprises providing a metal thermal interface material and the first thermal conductivity is greater than 10 W/mK; and

providing the second interface material comprises providing a polymer interface material and the second thermal conductivity is less than 5 W/mK.

19 . The method of claim 17 , wherein:

coupling the first electronic component comprises providing the component dam comprising:

a first lateral side that is distal to the second electronic component and a second lateral side opposite the first lateral side and proximate to the second electronic component; and

a vent extending through the first lateral side of the component dam and configured to laterally direct the overflow of the first interface material away from the second electronic component; and

the second lateral side and the enclosure dam together form the continuous barrier.

20 . The method of claim 17 , wherein:

coupling the first electronic component comprises coupling the first electronic component having a component metallization over the first electronic component top side;

coupling the second electronic component comprises coupling the second electronic component devoid of any component metallization over the second electronic component top side;

providing the enclosure comprises providing an enclosure metallization within the enclosure dam cavity; and

the enclosure metallization has a larger area than the component metallization.

Assignments (2)

Continuity (1)

References Cited (26)