IP Library › Granted Patent US 12,457,758
Granted Patent B2
US 12,457,758 · App. 17/856,772 · Granted Oct 28, 2025

Micro-scale passive device with particles in insulator layer

Inventors: Sombel Diaham (Villeneuve les Bouloc, FR); Baoxing Chen (Westford, MA)
Assignee: Analog Devices International Unlimited Company
H10D1/714H10D1/20
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Quick Facts
Patent No.
US 12,457,758
App. No.
17/856,772
Granted
Oct 28, 2025
Kind
B2
Abstract

Micro-scale passive devices, such as transformers and capacitors, having an insulator layer with insulative particles and/or conductive or nonlinear conductive particles disposed therein. The insulative particles disposed in the insulator layer can increase a breakdown electric field of the device, and the conductive or nonlinear conductive particles disposed in the insulator layer can reduce a maximum electric field of the device. Increasing the breakdown electric field of the device and/or reducing the maximum electric field of the device can increase the lifespan of a micro-scale passive device, and/or may allow the device to operate at a higher threshold electric field without breakdown of the device.

Claims (46)

1. An isolated micro-scale passive device comprising:

an isolator comprising:

a first conductor and a second conductor formed on a substrate;

a first insulator layer disposed over the first conductor;

a second insulator layer disposed at least partially between the first insulator layer and the second conductor; and

a plurality of insulative particles embedded in at least a portion of the first insulator layer and in at least a portion of the second insulator layer.

2. The isolated micro-scale passive device of claim 1 , wherein at least a subset of the plurality of insulative particles are disposed between the first conductor and the second conductor.

3. The isolated micro-scale passive device of claim 1 , comprising a third insulator layer disposed over the second conductor with an additional plurality of insulative particles disposed in the third insulator layer.

4. The isolated micro-scale passive device of claim 3 , further comprising a plurality of conductive or nonlinear conductive particles embedded in the second insulator layer, wherein:

a first portion of the second insulator layer has a first conductivity; and

the plurality of conductive or nonlinear conductive particles define a second portion of the second insulator layer with a second conductivity greater than the first conductivity.

5. The isolated micro-scale passive device of claim 4 , wherein:

at least a subset of the plurality of insulative particles form an isolation layer between the first conductor and the second conductor; and

at least a subset of the plurality of conductive or nonlinear conductive particles form a barrier layer of the second conductor.

6. The isolated micro-scale passive device of claim 1 , wherein the plurality of insulative particles comprise at least one of SiO 2 , Al 2 O 3 , or SiN x .

7. The isolated micro-scale passive device of claim 1 , wherein the plurality of insulative particles have a size between 1 nm and 20 nm.

8. The isolated micro-scale passive device of claim 1 , wherein the plurality of insulative particles have at least one of a permittivity between 3.5 and 10 or have a conductivity between 1×10 −18 S/cm and 1×10 −10 S/cm.

9. The isolated micro-scale passive device of claim 1 , wherein the plurality of insulative particles have a density in the at least the portion of the first insulator layer between 2 and 6 g/cm 3 .

10. The isolated micro-scale passive device of claim 1 , wherein:

the first conductor is patterned as a first coil; and

the second conductor is patterned as a second coil.

11. The isolated micro-scale passive device of claim 1 , wherein:

the first conductor is disposed in a first plane; and

the second conductor is disposed in a second plane parallel to the first plane, the second plane different than the first plane.

12. The isolated micro-scale passive device of claim 1 , wherein:

at least a portion of the first conductor is disposed in a first plane; and

at least a portion of the second conductor is disposed in the first plane.

13. An isolated micro-scale passive device comprising:

an isolator comprising:

a first conductor and a second conductor formed on a substrate; and

means for increasing, between the first conductor and the second conductor, a threshold electric field for operating without breakdown of the isolated micro-scale passive device, wherein the means for increasing the threshold electric field for operating without breakdown comprises a plurality of insulative particles, a first insulator layer disposed over the first conductor, and a second insulator layer disposed at least partially between the first insulator layer and the second conductor with the plurality of insulative particles being embedded in at least a portion of the first layer and in at least a portion of the second insulator layer.

14. The isolated micro-scale passive device of claim 13 , wherein the means for increasing the threshold electric field for operating without breakdown is configured to increase a breakdown electric field of the isolated micro-scale passive device.

15. The isolated micro-scale passive device of claim 13 , wherein the means for increasing the threshold electric field for operating without breakdown further comprises a plurality of conductive or nonlinear conductive particles embedded in the second insulator layer, wherein:

a first portion of the second insulator layer has a first conductivity; and

the plurality of conductive or nonlinear conductive particles define a second portion of the second insulator layer with a second conductivity greater than the first conductivity.

16. A method of manufacturing an isolated micro-scale passive device, the method comprising:

forming a first conductor on a substrate;

forming a first insulator layer on the first conductor;

forming a second insulator layer on the first insulator layer with a plurality of insulative particles embedded in at least a portion of the first insulator layer and in at least a portion of the second insulator layer; and

forming a second conductor on the substrate so that the second insulator layer is disposed at least partially between the first insulator layer and the second conductor.

17. The method of claim 16 , wherein forming the second insulator layer comprises curing a liquid material.

18. The method of claim 17 , further comprising introducing the plurality of insulative particles into the liquid material prior to curing the liquid material.

19. The method of claim 18 , further comprising dispersing the plurality of insulative particles within the liquid material after introducing the plurality of insulative particles into the liquid material.

20. The isolated micro-scale passive device of claim 1 , comprising:

a first terminal and a second terminal formed from a metallization layer, wherein the first insulator layer is disposed over the first terminal and the first conductor is formed from the metallization layer; and

a conductive layer coupling the first terminal and the second terminal.

Assignments (1)
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Sep 30, 2022
From: DIAHAM, SOMBEL; CHEN, BAOXING
To: ANALOG DEVICES INTERNATIONAL UNLIMITED COMPANY
Reel/Frame 061264/0504 →
Continuity (1)
Related Publication 20240006470A1 · Jan 4, 2024
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