Loop dependent word line ramp start time for program verify of multi-level NAND memory

1. A non-volatile memory device, comprising:

a control circuit configured to connect to an array of non-volatile memory cells having a NAND architecture and configured to store data in a multi-level cell (MLC) format for the memory cells, the control circuit configured to:

program a selected memory cell of a NAND string connected along a selected word line by applying a series of a plurality of program pulses to the selected word line alternating with a corresponding one or more of a plurality of verify operations for the selected memory cell, where to perform each of the verify operations the control circuit is configured to:

bias the selected word line and unselected word lines connected to the NAND string to an unselected word line read voltage level;

subsequent to biasing the selected word line the unselected word line read voltage level, bias the selected word line to a low voltage level;

determine one or more of a plurality of verify voltage levels;

based on a number of the determined one or more of the verify voltage levels, select a corresponding one of a plurality of delay times; and

subsequent to biasing the selected word line to the low voltage level, sequentially bias the selected word line to the plurality of determined verify voltage levels after waiting the corresponding selected delay time.

2. The non-volatile memory device of claim 1 , wherein the control circuit is on a control die, the non-volatile memory device further comprising:

a memory die including the array of non-volatile memory cells, the memory die formed separately from and bonded to the control die.

3. The non-volatile memory device of claim 1 , wherein the plurality of delay times includes a first delay time and a second delay time, the second delay time being greater than the first delay time and the second delay time corresponds to a greater number of determined verify voltage levels than the first delay time.

4. The non-volatile memory device of claim 3 , wherein the first delay time corresponds to a single determined verify voltage level and the second delay time corresponds to two determined verify voltage levels.

5. The non-volatile memory device of claim 1 , wherein the plurality of verify voltage levels includes levels corresponding to a plurality of target data states.

6. The non-volatile memory device of claim 5 , wherein to perform each of the verify operations the control circuit is further configured to:

in response to a selected memory cell verifying at the selected memory cell's target data state, bias the selected memory cell to inhibit further programming.

7. The non-volatile memory device of claim 1 , wherein the plurality of verify voltage levels include levels corresponding to a low verify level of a first target data state and a high verify level of the first target data state.

8. The non-volatile memory device of claim 7 , wherein to perform each of the verify operations the control circuit is further configured to:

in response to a selected memory cell having the first target data state verifying at the low verify level of the first target data state, bias the selected memory cell to partially inhibit further programming; and

in response to the selected memory cell having the first target data state verifying at the high verify level of the first target data state, bias the selected memory cell to inhibit further programming.

9. The non-volatile memory device of claim 1 , further comprising:

the array of non-volatile memory cells having a NAND architecture, the array having a three dimensional architecture in which NAND string run vertically relative to a horizontal substrate.

10. The non-volatile memory of claim 1 , wherein the control circuit comprises:

registers configured to store operating parameters for the memory array, the operating parameters including parameter values corresponding to the plurality of delay times, selecting the corresponding one of a plurality of delay times comprises selecting the corresponding parameter value.

11. A method, comprising:

writing each of a plurality of non-volatile memory cells connected along a selected word line to a corresponding one of a plurality of target data states, each of the non-volatile memory cells belonging to a corresponding NAND string to which the selected word line is connected, by performing a plurality of programming loops each comprising:

applying a programming pulse to the selected word line;

selecting one or more of a plurality of verify voltage levels;

based on a number of the one or more of the verify voltage levels selected, selecting a corresponding one of a plurality of delay times; and

subsequent to applying the programming pulse to the selected word line and selecting the corresponding one of the plurality of delay times, sequentially biasing the selected word line to the selected one or more verify voltage levels after waiting the corresponding selected delay time.

12. The method of claim 11 , wherein the plurality of verify voltage levels include levels corresponding to a low verify level of a first target data state and a high verify level of the first target data state, and wherein performing each of the plurality of programming loops further comprises:

in response to a selected memory cell having the first target data state verifying at the low verify level of the first target data state, biasing the selected memory cell to partially inhibit further programming; and

in response to the selected memory cell having the first target data state verifying at the high verify level of the first target data state, biasing the selected memory cell to inhibit further programming.

13. The method of claim 11 , wherein the plurality of verify voltage levels includes levels corresponding to a plurality of target data states, and wherein performing each of the plurality of programming loops further comprises:

in response to a selected memory cell verifying at the selected memory cell's corresponding target data state, biasing the selected memory cell to inhibit further programming.

14. The method of claim 11 , wherein performing each of the plurality of programming loops further comprises:

subsequent to applying the programming pulse to the selected word line and prior to sequentially biasing the selected word line to the selected one or verify voltage levels, biasing the selected word line and unselected word lines of the connected to the NAND strings to an unselected word line read voltage level; and

subsequent to biasing the selected word line the unselected word line read voltage level, biasing the selected word line to a low voltage level prior to waiting the corresponding selected delay time.

15. The method of claim 11 , wherein the NAND strings are part of a memory array on a memory die and the performing each of the plurality of programming loops further comprises:

applying the programming pulse to the selected word line by a control circuit formed on a control die formed separately from and bonded to the memory die; and

biasing the selected word line to the selected one or more verify voltage levels by the control circuit.

16. A non-volatile memory device, comprising:

an array of non-volatile memory cells configured to store data in a multi-level cell format, comprising:

a plurality of word lines; and

a plurality of NAND strings each having a plurality of memory cells each with a control gate connected to a corresponding one of the word lines; and

one or more control circuits connected to the array and configured to write each of a plurality of non-volatile memory cells connected along a selected word line to a corresponding one of a plurality of target data states by performing a plurality of programming loops in each of which the one or more control circuits are configured to:

apply a programming pulse to the selected word line;

select one or more of a plurality of verify voltage levels;

based on a number of the one or more of the verify voltage levels selected, select a corresponding one of a plurality of delay times; and

subsequent to applying the programming pulse to the selected word line and selecting the corresponding one of the plurality of delay times, sequentially bias the selected word line to the selected one or more verify voltage levels after waiting the corresponding selected delay time.

17. The non-volatile memory device of claim 16 , wherein the plurality of verify voltage levels include levels corresponding to a low verify level of a first target data state and a high verify level of the first target data state, and wherein to perform each of the plurality of programming loops the one or more control circuits are further configured to:

in response to a selected memory cell having the first target data state verifying at the low verify level of the first target data state, bias the selected memory cell to partially inhibit further programming; and

in response to the selected memory cell having the first target data state verifying at the high verify level of the first target data state, bias the selected memory cell to inhibit further programming.

18. The non-volatile memory device of claim 16 , wherein the plurality of verify voltage levels includes levels corresponding to a plurality of target data states, and wherein to perform each of the plurality of programming loops the one or more control circuits are further configured to:

in response to a selected memory cell verifying at the selected memory cell's corresponding target data state, biasing the selected memory cell to inhibit further programming.

19. The non-volatile memory device of claim 16 , wherein to perform each of the plurality of programming loops the one or more control circuits are further configured to:

subsequent to applying the programming pulse to the selected word line and prior to sequentially biasing the selected word line to the selected one or more verify voltage levels, bias the selected word line and unselected word lines of the connected to the NAND strings to an unselected word line read voltage level; and

subsequent to biasing the selected word line the unselected word line read voltage level, bias the selected word line to a low voltage level prior to waiting the corresponding selected delay time.

20. The non-volatile memory device of claim 16 , wherein the NAND strings are part of a memory die and the one or more control circuits are on a memory die formed separately from and bonded to the memory die.