Polishing pad and preparing method of semiconductor device using the same
The present disclosure is to provide a polishing pad which is capable of providing physical properties corresponding to various polishing purposes for various polishing objects through the subdivided structural design in a thickness direction, and of securing environmental friendliness by applying a recycled or recyclable material to at least some components, in relation to disposal after use, unlike the conventional polishing pad. Specifically, the polishing pad includes a polishing layer, wherein the polishing layer includes a polishing variable layer having a polishing surface; and a polishing constant layer disposed on a rear surface side of the polishing variable layer opposite to the polishing surface, and wherein the polishing constant layer includes a cured product of a composition having thermosetting polyurethane particles and a binder.
1 . A polishing pad comprising:
a polishing layer,
wherein the polishing layer includes a polishing variable layer having a polishing surface; and a polishing constant layer disposed on a rear surface side of the polishing variable layer opposite to the polishing surface, and
wherein the polishing variable layer refers to a region whose physical and/or chemical characteristics change during a polishing process using the polishing pad,
wherein the polishing constant layer refers to a region whose physical and/or chemical characteristics do not change during a polishing process using the polishing pad,
wherein an interface between the polishing variable layer and the polishing constant layer is a separable interface, and
wherein a ratio of shore D hardness of the polishing variable layer and shore D hardness of the polishing constant layer is from 0.50 to 1.50, and
wherein the polishing variable layer is from 30% to 60% by volume of a total volume of the polishing layer, and
wherein a first polishing variability index of the polishing variable layer according to Equation 1 below is from 0.1 to 11.0:
(
Ri
-
Rf
)
·
Ti
(
Ti
-
Tf
)
·
Ri
[
Equation
1
]
wherein Ri is a surface roughness (Ra) of the polishing surface at a lifespan introduction time of the polishing variable layer, Rf is a surface roughness (Ra) of the polishing surface at a lifespan end time of the polishing variable layer, Ti is a total thickness of the polishing pad at the lifespan introduction time of the polishing variable layer, and Tf is the total thickness of the polishing pad at the lifespan end time of the polishing variable layer.
2 . The polishing pad of claim 1 , wherein the polishing variable layer includes at least one groove on the polishing surface, the groove having a depth that is less than or equal to a total thickness of the polishing variable layer, and
wherein a second polishing variability index of the polishing variable layer according to Equation 2 below is from 0.1 to 3.5:
(
Ri
-
Rf
)
·
Gi
(
Gi
-
Gf
)
·
Ri
[
Equation
2
]
wherein Ri is a surface roughness (Ra) of the polishing surface at a lifespan introduction time of the polishing variable layer, Rf is a surface roughness (Ra) of the polishing surface at a lifespan end time of the polishing variable layer, Gi is the depth of the groove at the lifespan introduction time of the polishing variable layer, and Gf is the depth of the groove at the lifespan end time of the polishing variable layer.
3 . The polishing pad of claim 1 , wherein the polishing variable layer includes at least one groove on the polishing surface, the groove having a depth that is less than or equal to a total thickness of the polishing variable layer, and
wherein a depth change rate (%) of the groove according to Equation 3 below is from 20% to 100%:
(
Gi
-
Gf
)
Gi
×
100
[
Equation
3
]
wherein Gi is the depth of the groove at the lifespan introduction time of the polishing variable layer, and Gf is the depth of the groove at the lifespan end time of the polishing variable layer.
4 . The polishing pad of claim 1 , wherein Shore D hardness for an entire laminated structure is from 45 to 70.
5 . The polishing pad of claim 1 , wherein the polishing variable layer includes a thermosetting resin, and
wherein the polishing constant layer includes a thermoplastic resin.
6 . The polishing pad of claim 1 , wherein the polishing variable layer includes a cured product of a preliminary composition having a urethane-based prepolymer.
7 . The polishing pad of claim 1 , wherein the polishing constant layer includes one selected from the group consisting of polyethylene (PE), polypropylene (PP), polystyrene (PS), polyvinylchloride (PVC), thermoplastic polyurethane (TPU), and combinations thereof.
8 . The polishing pad of claim 1 , wherein the polishing constant layer includes a cured product of a composition having thermosetting polyurethane particles and a binder.
9 . The polishing pad of claim 8 , wherein each of the polishing variable layer and the polishing constant layer includes at least one layer.
10 . The polishing pad of claim 8 , wherein an average particle diameter of the thermosetting polyurethane particles is from 20 μm to 3.0 mm.
11 . The polishing pad of claim 8 , wherein the binder includes a first urethane-based prepolymer and a first curing agent.
12 . The polishing pad of claim 8 , wherein the composition includes from 15 parts by weight to 150 parts by weight of the binder with respect to 100 parts by weight of the thermosetting polyurethane particles.
13 . The polishing pad of claim 8 , wherein the polishing variable layer includes a cured product of a composition including a second urethane-based prepolymer.
14 . A method for preparing a semiconductor device, the method comprising:
providing a polishing pad on a surface plate, the polishing pad including a polishing layer having a polishing surface; and
polishing a polishing object while rotating the polishing pad and the polishing object relative to each other under a pressure condition after arranging a polished surface of the polishing object to be in contact with the polishing surface,
wherein the polishing layer includes a polishing variable layer having the polishing surface, and a polishing constant layer disposed on a rear surface side of the polishing variable layer opposite to the polishing surface,
wherein the polishing variable layer refers to a region of which physical and/or chemical characteristics change during a polishing process using the polishing pad,
wherein the polishing constant layer refers to a region of which physical and/or chemical characteristics do not change during a polishing process using the polishing pad,
wherein an interface between the polishing variable layer and the polishing constant layer is a separable interface,
wherein a ratio of shore D hardness of the polishing variable layer and shore D hardness of the polishing constant layer is from 0.50 to 1.50,
wherein the polishing variable layer is from 30% to 60% by volume of a total volume of the polishing layer, and
wherein a first polishing variability index of the polishing variable layer according to Equation 1 below is from 0.1 to 11.0:
(
Ri
-
Rf
)
·
Ti
(
Ti
-
Tf
)
·
Ri
[
Equation
1
]
wherein Ri is a surface roughness (Ra) of the polishing surface at a lifespan introduction time of the polishing variable layer, Rf is a surface roughness (Ra) of the polishing surface at a lifespan end time of the polishing variable layer, Ti is a total thickness of the polishing pad at the lifespan introduction time of the polishing variable layer, and Tf is the total thickness of the polishing pad at the lifespan end time of the polishing variable layer.
15 . The method of claim 14 , wherein the polishing constant layer includes a cured product of a composition having thermosetting polyurethane particles and a binder.
16 . The method of claim 14 , wherein a load by which the polished surface of the polishing object is pressed against the polishing surface of the polishing layer is from 0.01 psi to 20 psi.