Microstructure enhanced absorption photosensitive devices
Microstructures of micro and/or nano holes on one or more surfaces enhance photodetector optical sensitivity. Arrangements such as a CMOS Image Sensor (CIS) as an imaging LIDAR using a high speed photodetector array wafer of Si, Ge, a Ge alloy on SI and/or Si on Ge on Si, and a wafer of CMOS Logic Processor (CLP) ib Si fi signal amplification, processing and/or transmission can be stacked for electrical interaction. The wafers can be fabricated separately and then stacked or can be regions of the same monolithic chip. The image can be a time-of-flight image. Bayer arrays can be enhanced with microstructure holes. Pixels can be photodiodes, avalanche photodiodes, single photon avalanche photodiodes and phototransistors on the same array and can be Ge or Si pixels. The array can be of high speed photodetectors with data rates of 56 Gigabits per second, Gbps, or more per photodetector.
1. A semiconductor device comprising:
an I-region of undoped or low doped semiconductor material configured to generate electrical charges in response to light;
a top doped region of semiconductor material over at least a central part of the I-region configured for passage of said light to the I-region to generate said electrical charges;
a bottom doped region of semiconductor material under at least a part of the I-region;
wherein the top and bottom doped regions are doped to opposite polarities such that one is P-doped and the other is N-doped and each is doped more than the I-region;
one or more deliberately formed nanoholes extending up from a bottom surface of the bottom doped region and having closed contours and said bottom surface and centers spaced from each other in two orthogonal dimensions;
wherein the top doped region has a top surface free of deliberately formed nanoholes;
a cover layer and a microlens over said top doped layer;
a dielectric base region comprising solid material that is under said bottom doped region;
an ASIC monolithically integrated with said I-region and doped regions such that the ASIC, the I-region and the doped regions are in a single wafer of semiconductor material;
an ASIC wafer mounted under said dielectric base region;
a first set of electrical contacts in said dielectric base region operatively coupled with said ASIC and a second set of electrical contacts in said dielectric base region operatively coupled with said ASIC wafer; and
deep trench insulation at lateral sides of said I-region and top and bottom doped regions.
2. The semiconductor device of claim 1 , in which the one or more nanoholes have lateral dimensions of 10-10,000 nm and heights of 20-5,000 nm.
3. The semiconductor device of claim 1 , in which the top doped region comprises a portion over a top side of said I-region and side portions that are between said deep trench insulation and said lateral sides of said I-regions.
4. The semiconductor device of claim 3 , further comprising at least one nanohole extending up from a bottom surface of at least one of said side portions of the top doped region.
5. The semiconductor device of claim 4 , in which said one or more nanoholes extending up from at least one of the side portions of the top doped region are narrower and/or shallower that said one or more nanoholes extending up from a bottom surface of said bottom doped layer.
6. The semiconductor device of claim 1 , in which the I-region and the top and bottom doped regions comprise Si.
7. The semiconductor device of claim 4 , in which said cover layer comprises one or more of a solid dielectric material, an antireflection material, and a color filter.
8. A semiconductor device comprising:
an I-region of undoped or low doped semiconductor material comprising Ge or an alloy thereof;
a first top doped region of semiconductor material comprising Ge or an alloy thereof over at least a part of the I-region;
a second top doped region of semiconductor material comprising Si over said first doped region;
a bottom doped region of semiconductor material comprising Ge or an alloy thereof under at least a part of the I-region;
wherein the first and second top doped regions are doped to one polarity and the bottom doped region is doped to another polarity and each is doped more than the I-region;
one or more deliberately formed nanoholes extending up from a bottom surface of the bottom doped region;
wherein the second top doped region has a top surface free of deliberately formed nanoholes;
a cover layer and a microlens over said top doped layer;
a dielectric base region comprising solid material that is under said bottom doped layer;
an ASIC monolithically integrated with said I-region and doped regions;
an ASIC wafer mounted under said dielectric base region;
a first set of electrical contacts in said dielectric base region operatively coupled with said ASIC and a second set of electrical contacts in said dielectric base region operatively coupled with said ASIC wafer; and
deep trench insulation ( 1280 ) at each lateral side of said I-region and top and bottom doped regions.
9. The semiconductor device of claim 8 , in which the one or more nanoholes have lateral dimensions of 10-10,000 nm and heights of 20-5,000 nm.
10. The semiconductor device of claim 8 in which at least one of said first and second top doped regions comprises side portions that are adjacent to lateral sides of said I-region.
11. The semiconductor device of claim 10 , further comprising at least one nanohole extending up from a top surface of said dielectric base region.
12. The semiconductor device of claim 11 , in which said one or more nanoholes extending up from said dielectric base region are narrower and/or shallower that said one or more nanoholes extending up from a bottom surface of said bottom doped layer.
13. The semiconductor device of claim 12 , further including a semiconductor region that is under the bottom doped region.
14. The semiconductor device of claim 13 , in which said one or more nanoholes extending up from the bottom surface of the bottom doped region and said one or more nanoholes extending up from said dielectric base region pass through said semiconductor region that is under the bottom doped region.
15. The semiconductor device of claim 8 in which said cover layer comprises one or more of a solid dielectric material, an antireflection material, and a color filter.
16. A semiconductor device comprising:
an I-region of undoped or low doped semiconductor material material configured to generate electrical charges in response to light;
a first doped region of semiconductor material at one side of the I-region configured for passage of said light to the I-region to generate said electrical charges;
a second doped region of semiconductor material at another side of the I-region;
wherein the first and second doped regions are doped to opposite polarities such that one is P-doped and the other is N-doped and each is doped more than the I-region;
one or more deliberately formed nanoholes extending into the second doped region from a surface thereof that faces away from the I-region and having closed contours at said surface and centers spaced from each other in two orthogonal dimensions;
wherein the first doped region has a surface that faces away from the I-region and is free of deliberately formed nanoholes;
a cover layer and a microlens over said first doped layer;
a dielectric base region comprising solid material that is adjacent to said surface of the second doped region that faces away from the I-region;
an ASIC monolithically integrated with said I-region and doped regions such that the I-region, the doped regions and the ASIC are in a single wafer of semiconductor material;
an ASIC wafer mounted adjacent said dielectric base region;
a first set of electrical contacts in said dielectric base region operatively coupled with said ASIC and a second set of electrical contacts in said dielectric base region operatively coupled with said ASIC wafer; and
deep trench insulation at outwardly facing sides of said I-region and top and bottom doped regions.
17. The semiconductor device of claim 16 , in which the one or more nanoholes have lateral dimensions of 10-10,000 nm and heights of 20-5,000 nm.
18. The semiconductor device of claim 16 , in which the first doped region comprises a top portion over a top side of said I-region and side portions that are between said deep trench insulation and lateral sides of said I-regions.
19. The semiconductor device of claim 16 , further comprising at least one additional nanohole extending from said dielectric base region into material that is outside said second doped region.
20. The semiconductor device of claim 19 , in which said one or more nanoholes extending from said dielectric base region into said material that is outside the second doped region are narrower and/or shallower that said one or more nanoholes extending into said second doped layer.