Microstructure enhanced absorption photosensitive devices
Lateral and vertical microstructure enhanced photodetectors and avalanche photodetectors are monolithically integrated with CMOS/BiCMOS ASICs and can also be integrated with laser devices using fluidic assembly techniques. Photodetectors can be configured in a vertical PIN arrangement or lateral metal-semiconductor-metal arrangement where electrodes are in an inter-digitated pattern. Microstructures, such as holes and protrusions, can improve quantum efficiency in silicon, germanium and III-V materials and can also reduce avalanche voltages for avalanche photodiodes. Applications include optical communications within and between datacenters, telecommunications, LIDAR, and free space data communication.
1. An integrated, single-chip structure comprising a photosensitive portion at one side of a substrate and an active CMOS or BICMOS electronic circuit at an opposite side of the substrate, wherein:
said photosensitive portion at one side of said substrate comprises at least one photodetector comprising a P-doped region, an N-doped region, and an I-region of low doped or undoped semiconductor material that is between the N-doped region and the P-doped region and has at least one hole deliberately formed to extend into said photosensitive portion;
wherein said I-region is essentially single-crystal semiconductor material having inherent crystal planes and said at least one hole extends into said photosensitive portion to a depth exceeding a depth of an inverted pyramid hole with sides along said crystal planes;
said active circuit at an opposite side of said substrate comprises plural active electronic elements;
connecting electrodes are configured to carry to said active electronic circuit electrical signals generated by said photosensitive portion in response to illumination, for processing by said active electronic circuit; and
output electrodes are connected to said active electronic circuit and are configured to deliver electrical signals processed by the active electronic circuit.
2. The structure of claim 1 , in which said P-doped region, N-doped region, and I-region are vertically arranged.
3. The structure of claim 2 , in which said at least one hole extends through one and toward the other of said P-doped region and N-doped region.
4. The structure of claim 3 , further including material of one of said P-doped region and N-doped region at sidewall portions of said at least one hole.
5. The structure of claim 2 in which said I-region is at a closed end of said at least one hole and along at least sidewall portions thereof.
6. The structure of claim 2 , in which one of said P-doped region and N-doped region extends along at least sidewall portions of said at least one hole.
7. The structure of claim 2 , in which said at least one hole extends through said P-doped region and N-doped region.
8. The structure of claim 2 , in which said at least one hole comprises plural holes laterally spaced from each other and said photosensitive portion comprises plural photodetectors.
9. The structure of claim 2 , further including at least one avalanche photodiode structure.
10. The structure of claim 2 , further including at least one single photon avalanche photodiode (SPAD).
11. The structure of claim 1 , in which said P-doped region, N-doped region, and I-region have at least portions that are vertically aligned.
12. The structure of claim 11 , in which one of said P-doped region and N-doped region is at a closed end and at sidewall portions of said at least one hole.
13. The structure of claim 11 , in which said at least one hole extends through at least one of said P-doped region and N-doped region.
14. The structure of claim 13 , in which said at least one hole extends into both said P-doped region and N-doped region.
15. The structure of claim 11 , in which said at least one hole penetrates through both said P-doped region and N-doped region.
16. The structure of claim 11 , in which said at least one hole comprises plural holes laterally spaced from each other and said photosensitive portion comprises plural photodetectors laterally spaced from each other.
17. The structure of claim 11 , in which said at least one hole has a closed end at one of said P-doped region and N-doped region.
18. The structure of claim 11 , further including at least one avalanche photodiode structure.
19. The structure of claim 11 , further including at least one single photon avalanche photodiode (SPAD).
20. The structure of claim 1 , wherein the photosensitive portion comprises plural pixels and each pixel has only a single one of said holes.
21. The structure of claim 20 , in which said pixels have round holes.
22. The structure of claim 20 , in which said pixels have rectangular holes.
23. An integrated, single-chip structure comprising a photosensitive portion at one side of a substrate and an active CMOS or BICMOS electronic circuit at an opposite side of the substrate, wherein:
said photosensitive portion at one side of said substrate comprises at least one photodetector comprising a P-doped region, an N-doped region, and an I-region of low doped or undoped semiconductor material that is between the N-doped region and the P-doped region and has at least one hole deliberately formed to extend into said photosensitive portion;
wherein the P-doped region and the N-doped region overlap only partly;
wherein said I-region is essentially single-crystal semiconductor material having inherent crystal planes and said at least one hole extends into said photosensitive portion to a depth exceeding a depth of an inverted pyramid hole with sides along said crystal planes;
said active circuit at an opposite side of said substrate comprises plural active electronic elements;
connecting electrodes are configured to carry to said active electronic circuit electrical signals generated by said photosensitive portion in response to illumination, for processing by said active electronic circuit; and
output electrodes are connected to said active electronic circuit and are configured to deliver electrical signals processed by the active electronic circuit.
24. The structure of claim 23 , in which one of the P-doped and N-doped regions extends at least along an entire width of said at least one hole.
25. The structure of claim 23 , in which one of the P-doped and N-doped regions extends at least along a part of a side wall of said at least one hole.