Gas diffuser housings, devices, and related methods
Described are directional gas diffuser devices and housing components thereof; systems that include the gas diffuser devices; methods of using the gas diffuser devices; and methods of manufacturing gas diffuser devices.
1 . A directional gas diffuser comprising:
an elongate housing, the housing comprising:
an inlet end,
a closed end,
a length between the inlet end and the closed end,
an opening extending along the length on a front side of the housing, and
a channel extending between the inlet end and the closed end, the channel defined along the length by:
the opening extending along the front side,
an elongate back surface, and
elongate side surfaces, wherein
the channel has a length, a width, a depth, and a varied cross-sectional area along the channel length.
2 . The diffuser of claim 1 , wherein the length is greater than the width, and the width is greater than a maximum depth of the channel.
3 . The diffuser of claim 1 , wherein the depth decreases along a portion of the length as the channel extends toward the closed end.
4 . The diffuser of claim 1 , wherein the elongate back surface is non-porous and the two elongate side surfaces are non-porous.
5 . The diffuser of claim 1 , the housing further comprising a multi-layer composite that extends from the elongate back surface to the front side.
6 . The diffuser of claim 5 , wherein the multi-layer composite comprises: a metal or metal alloy, a metal composite matrix, a ceramic, or a polymer.
7 . The diffuser of claim 1 , wherein the multi-layer composite does not contain a seam.
8 . The diffuser of claim 1 , further comprising a diffuser membrane secured to the opening.
9 . The diffuser of claim 8 , wherein relative to an otherwise comparable diffuser having a channel with a uniform cross-sectional area, the varied cross-sectional area along the length produces a more uniform rate of flow of fluid through the diffuser membrane along the length of the diffuser membrane.
10 . The diffuser of claim 8 capable of producing a laminar flow of water through the diffuser membrane, whereby with the diffuser situated horizontally with the diffuser membrane facing down, water passing through the diffuser is capable of producing a continuous thin water film that forms from the flowing water along a length of the diffuser membrane.
11 . A directional gas diffuser comprising:
an elongate housing, the housing comprising:
an inlet end that comprises an inlet,
a closed end,
a length between the inlet end and the closed end,
an opening extending along the length on a front face of the housing, and
an interior channel extending between the inlet and the closed end, the channel defined along the length by:
the opening on the front side,
an elongate, non-porous back surface, and
elongate non-porous side surfaces.
12 . The diffuser of claim 11 , wherein the length is greater than the width, and the width is greater than a maximum depth of the channel.
13 . The diffuser of claim 11 , wherein a depth of the channel decreases along a portion of the length as the channel extends toward the closed end.
14 . The diffuser of claim 11 , the housing further comprising a multi-layer composite that extends from the elongate back surface to the front side.
15 . The diffuser of claim 14 , wherein the multi-layer composite comprises: a metal or metal alloy, a metal composite matrix, a ceramic, or a polymer.
16 . The diffuser of claim 14 , wherein the multi-layer composite does not contain a seam.
17 . An apparatus comprising a chamber that includes an interior adapted to contain one or more semiconductor wafers, the chamber comprising the directional gas diffuser of claim 1 at the interior, connected to a source of inert gas.
18 . The apparatus of claim 17 , selected from a wafer carrier and a wafer transfer station.
19 . A method of equalizing pressure in a chamber of the wafer transfer station of claim 18 , the method comprising: with the chamber containing multiple semiconductor wafers, with the chamber closed and containing an interior at below atmosphere pressure, dispensing inert gas through the diffuser to increase the pressure within the interior.
20 . A method of displacing a gaseous atmosphere in a chamber of the wafer carrier of claim 18 , the method comprising: with the chamber containing multiple semiconductor wafers in the gaseous atmosphere, dispensing inert gas through the diffuser to add the inert gas to the interior.
21 . The method of claim 20 , wherein the gaseous atmosphere in the chamber is air, and the inert gas displaces the air.
22 . A method of making housing of a directional gas diffuser of claim 1 , by additive manufacturing, the method comprising:
forming a first layer of solidified feedstock,
forming a second layer of solidified feedstock on a surface of the first layer of solidified feedstock,
wherein the layers of solidified feedstock are part of the housing.
23 . The method of claim 22 , further comprising: forming a first feedstock layer on a surface, the feedstock layer comprising inorganic particles;forming a first solidified feedstock from the first feedstock layer;forming a second feedstock layer over the first feedstock layer, the second feedstock layer comprising inorganic particles; and forming a second solidified feedstock from the second feedstock layer, wherein the first and second solidified feedstock layers are part of a housing of a directional gas diffuser.
24 . The method of claim 22 , further comprising forming solidified feedstock by melting inorganic particles using a laser.
25 . The method of claim 22 , wherein the solidified feedstock layers comprise particles selected from: metal or metal alloy particles, metal composite matrix particles, ceramic particles, and polymer particles.