IP Library › Granted Patent US 12,527,236
Granted Patent B2
US 12,527,236 · App. 17/997,447 · Granted Jan 13, 2026

Lateral programmable metallization cell devices

Inventors: Michael Kozicki (Phoenix, AZ); Ninad Chamele (Tempe, AZ); Mehmet Balaban (Phoenix, AZ)
Assignee: ARIZONA BOARD OF REGENTS ON BEHALF OF ARIZONA STATE UNIVERSITY
H10N70/245H10N70/028H10N70/823H10N70/8416H10N70/8833
View Patent ↗
Loading inventors, assignments & file history…
Monitor This Case
Get email alerts when status or documents change.
Order Certified Copies
Most orders are placed with the USPTO same day — all within 24 business hours.
Order via The Patent Place →
Pre-filled with this patent's details
Quick Facts
Patent No.
US 12,527,236
App. No.
17/997,447
Filed
Oct 28, 2022
Granted
Jan 13, 2026
Kind
B2
Art Unit
2811
USPC
257/4
Abstract

Lateral programmable metallization cells may comprise a solid electrolyte layer, an anode coupled to the solid electrolyte layer, and a cathode coupled to the solid electrolyte layer. Exemplary solid electrolyte layers may comprise a first layer comprising an oxide electrolyte and a copper species and a second layer comprising at least one copper species, the second layer coupled to the first layer.

Claims (12)

1 . A lateral programmable metallization cell, comprising:

a solid electrolyte layer including

a first layer comprising an oxide electrolyte and a copper species; and

a second layer comprising metallic copper (Cu) and copper oxide (Cu 2 Q), the second layer coupled to the first layer;

an anode coupled to the solid electrolyte layer; and

a cathode coupled to the solid electrolyte layer.

2 . The lateral programmable metallization cell of claim 1 , wherein the oxide electrolyte comprises tungsten trioxide.

3 . The lateral programmable metallization cell of claim 1 , wherein the oxide electrolyte comprises silicon oxide.

4 . The lateral programmable metallization cell of claim 1 , wherein the oxide electrolyte comprises tantalum pentoxide.

5 . The lateral programmable metallization cell of claim 1 , wherein a thickness of the first layer is between one nanometer and 900 nanometers.

6 . The lateral programmable metallization cell of claim 1 , wherein a thickness of the second layer is between one nanometer and 50 nanometers.

7 . The lateral programmable metallization cell of claim 1 , wherein the cathode comprises nickel, and wherein the anode comprises copper.

Assignments (1)
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Jan 24, 2023
From: KOZICKI, MICHAEL; CHAMELE, NINAD; BALABAN, MEHMET
To: ARIZONA BOARD OF REGENTS ON BEHALF OF ARIZONA STATE UNIVERSITY
Reel/Frame 062470/0392 →
Continuity (2)
Provisional Application 63018395 · Apr 30, 2020
Related Publication 20230172079A1 · Jun 1, 2023
References Cited (240)
US 4712879A · Lynam et al. · 1987 [cited by applicant]
US 4904338A · Kozicki · 1990 [cited by applicant]
US 5314772A · Kozicki et al. · 1994 [cited by applicant]
US 5434917A · Naccache et al. · 1995 [cited by applicant]
US 5761115A · Kozicki et al. · 1998 [cited by applicant]
US 5896312A · Kozicki et al. · 1999 [cited by applicant]
US 5914893A · Kozicki et al. · 1999 [cited by applicant]
US 6084796A · Kozicki et al. · 2000 [cited by applicant]
US 6388324B2 · Kozicki · 2002 [cited by applicant]
US 6418049B1 · Kozicki et al. · 2002 [cited by applicant]
US 6469364B1 · Kozicki · 2002 [cited by applicant]
US 6487106B1 · Kozicki · 2002 [cited by applicant]
US 6635914B2 · Kozicki et al. · 2003 [cited by applicant]
US 6798692B2 · Kozicki et al. · 2004 [cited by applicant]
US 6825489B2 · Kozicki · 2004 [cited by applicant]
US 6865117B2 · Kozicki · 2005 [cited by applicant]
US 6914802B2 · Kozicki · 2005 [cited by applicant]
US 6927411B2 · Kozicki · 2005 [cited by applicant]
US 6940745B2 · Kozicki · 2005 [cited by applicant]
US 6985378B2 · Kozicki · 2006 [cited by applicant]
US 6998312B2 · Kozicki et al. · 2006 [cited by applicant]
US 7006376B2 · Kozicki · 2006 [cited by applicant]
US 7085928B1 · Schmid et al. · 2006 [cited by applicant]
US 7101728B2 · Kozicki et al. · 2006 [cited by applicant]
US 7142450B2 · Kozicki et al. · 2006 [cited by applicant]
US 7145794B2 · Kozicki · 2006 [cited by applicant]
US 7169635B2 · Kozicki et al. · 2007 [cited by applicant]
US 7180104B2 · Kozicki · 2007 [cited by applicant]
US 7227169B2 · Kozicki · 2007 [cited by applicant]
US 7288781B2 · Kozicki · 2007 [cited by applicant]
US 7294875B2 · Kozicki · 2007 [cited by applicant]
US 7372065B2 · Kozicki et al. · 2008 [cited by applicant]
US 7385219B2 · Kozicki et al. · 2008 [cited by applicant]
US 7402847B2 · Kozicki et al. · 2008 [cited by applicant]
US 7405967B2 · Kozicki et al. · 2008 [cited by applicant]
US 7560722B2 · Kozicki · 2009 [cited by applicant]
US 7675766B2 · Kozicki · 2010 [cited by applicant]
US 7728322B2 · Kozicki · 2010 [cited by applicant]
US 7763158B2 · Kozicki · 2010 [cited by applicant]
US 7929331B2 · Kozicki · 2011 [cited by applicant]
US 8022384B2 · Kozicki · 2011 [cited by applicant]
US 8134140B2 · Kozicki · 2012 [cited by applicant]
US 8213217B2 · Kozicki · 2012 [cited by applicant]
US 8213218B2 · Kozicki · 2012 [cited by applicant]
US 8218350B2 · Kozicki · 2012 [cited by applicant]
US 8331128B1 · Derhacobian et al. · 2012 [cited by applicant]
US 8742531B2 · Kozicki · 2014 [cited by applicant]
US 8941089B2 · Gopalan et al. · 2015 [cited by applicant]
US 8999819B2 · Kozicki et al. · 2015 [cited by applicant]
US 9165644B2 · Kamalanathan et al. · 2015 [cited by applicant]
US 9431606B1 · Ramaswamy et al. · 2016 [cited by applicant]
US 9460807B2 · Chung · 2016 [cited by applicant]
US 9627055B1 · Robustelli · 2017 [cited by applicant]
US 9773141B2 · Kozicki · 2017 [cited by applicant]
US 9836633B2 · Kozicki · 2017 [cited by applicant]
US 9917104B1 · Roizin et al. · 2018 [cited by applicant]
US 9971566B2 · Cambou · 2018 [cited by applicant]
US 9985791B2 · Cambou · 2018 [cited by applicant]
US 10074000B2 · Kozicki · 2018 [cited by applicant]
US 10090840B1 · Lee et al. · 2018 [cited by applicant]
US 10223567B2 · Kozicki · 2019 [cited by applicant]
US 10467447B1 · Kozicki · 2019 [cited by applicant]
US 10558172B2 · Kozicki · 2020 [cited by applicant]
US 10710070B2 · Kozicki et al. · 2020 [cited by applicant]
US 10810731B2 · Kozicki · 2020 [cited by applicant]
US 10868246B2 · Karpov et al. · 2020 [cited by applicant]
US 11127694B2 · Kozicki et al. · 2021 [cited by applicant]
US 11244722B2 · Kozicki · 2022 [cited by applicant]
US 20020127886A1 · Moore et al. · 2002 [cited by applicant]
US 20030107105A1 · Kozicki · 2003 [cited by applicant]
US 20040101729A1 · Kearl · 2004 [cited by applicant]
US 20040124407A1 · Kozicki et al. · 2004 [cited by applicant]
US 20050225413A1 · Kozicki et al. · 2005 [cited by applicant]
US 20060238185A1 · Kozicki · 2006 [cited by applicant]
US 20060291364A1 · Kozicki · 2006 [cited by applicant]
US 20070285148A1 · Sakamoto et al. · 2007 [cited by applicant]
US 20080296697A1 · Hsu et al. · 2008 [cited by applicant]
US 20100006813A1 · Haiwen et al. · 2010 [cited by applicant]
US 20100072448A1 · Khoueir et al. · 2010 [cited by applicant]
US 20100163829A1 · Wang · 2010 [cited by examiner]
US 20100193761A1 · Amin et al. · 2010 [cited by applicant]
US 20110180775A1 · Lin et al. · 2011 [cited by applicant]
US 20110254141A1 · Roest et al. · 2011 [cited by applicant]
US 20110286258A1 · Chen et al. · 2011 [cited by applicant]
US 20130134374A1 · Kim et al. · 2013 [cited by applicant]
US 20130220413A1 · Kozicki et al. · 2013 [cited by applicant]
US 20150069320A1 · Rabkin et al. · 2015 [cited by applicant]
US 20150123064A1 · Schubert et al. · 2015 [cited by applicant]
US 20150123065A1 · Petz et al. · 2015 [cited by applicant]
US 20150195088A1 · Rostami et al. · 2015 [cited by applicant]
US 20150280120A1 · Molas · 2015 [cited by examiner]
US 20150372060A1 · Terai et al. · 2015 [cited by applicant]
US 20170098469A1 · Park · 2017 [cited by applicant]
US 20170271403A1 · Yamamoto · 2017 [cited by examiner]
US 20180012657A1 · Shih et al. · 2018 [cited by applicant]
US 20180088059A1 · Kozicki · 2018 [cited by applicant]
US 20180211703A1 · Choi et al. · 2018 [cited by applicant]
US 20190197265A1 · Kozicki · 2019 [cited by applicant]
US 20190221739A1 · Kim et al. · 2019 [cited by applicant]
US 20190335252A1 · Ryan · 2019 [cited by applicant]
US 20190378638A1 · Liu et al. · 2019 [cited by applicant]
US 20200006649A1 · Jiang et al. · 2020 [cited by applicant]
US 20200036037A1 · Krause et al. · 2020 [cited by applicant]
US 20200117882A1 · Kozicki · 2020 [cited by applicant]
US 20200203604A1 · Pillarisetty et al. · 2020 [cited by applicant]
US 20200272797A1 · Kozicki · 2020 [cited by applicant]
US 20200338556A1 · Kozicki et al. · 2020 [cited by applicant]
US 20200381372A1 · Kozicki et al. · 2020 [cited by applicant]
US 20210090649A1 · Kozicki et al. · 2021 [cited by applicant]
US 20210175185A1 · Kozicki et al. · 2021 [cited by applicant]
US 20210305508A1 · Lee et al. · 2021 [cited by applicant]
US 20210351348A1 · Hsu et al. · 2021 [cited by applicant]
US 20220148982A1 · Kozicki et al. · 2022 [cited by applicant]
US 20220262433A1 · Kozicki · 2022 [cited by applicant]
US 20230206964A1 · Shen et al. · 2023 [cited by applicant]
US 20230274893A1 · Andree · 2023 [cited by applicant]
CN 113517393A · 2021 [cited by applicant]
DE 102020122109A1 · 2021 [cited by applicant]
KR 101566949B1 · 2015 [cited by applicant]
WO WO1997048032A2 · 1997 [cited by applicant]
WO WO1997048032A3 · 1997 [cited by applicant]
WO WO1999028914A2 · 1999 [cited by applicant]
WO WO2000048196A1 · 2000 [cited by applicant]
WO WO2002021542A1 · 2002 [cited by applicant]
WO WO2002082452A2 · 2002 [cited by applicant]
WO WO2002099517A2 · 2002 [cited by applicant]
WO WO2003028098A2 · 2003 [cited by applicant]
WO WO2003032392A2 · 2003 [cited by applicant]
WO WO2003036735A2 · 2003 [cited by applicant]
WO WO2003058638A1 · 2003 [cited by applicant]
WO WO2003079463A2 · 2003 [cited by applicant]
WO WO2005083810A2 · 2005 [cited by applicant]
WO WO2005124788A2 · 2005 [cited by applicant]
WO WO2006043185A1 · 2006 [cited by applicant]
WO WO2012065076A1 · 2012 [cited by applicant]
WO 2018057021A1 · 2018 [cited by applicant]
WO WO2018175973A1 · 2018 [cited by applicant]
WO 2019066964A1 · 2019 [cited by applicant]
Gopalan et al., Structure of copper-doped tungsten oxide films for solid-state memory, Journal of Non-Crystalline Solids 353 (2007) 1844-1848 (Year: 2007). [cited by examiner]
Banno et al., Diffusivity of Cu Ions in Solid Electrolyte and Its Effect on the Performance of Nanometer-Scale Switch, IEEE Transactions on Electron Devices, vol. 55, No. 11, Nov. 2008, pp. 3283-3287 (Year: 2008). [cited by examiner]
English Machine Translation of Kang et al. (KR101566949B1) dated Jun. 30, 2014. (Year: 2014). [cited by applicant]
Abtew, M. Zhang, and D. A. Drabold, “Ab initio estimate of temperature dependence of electrical conductivity in a model amorphous material: Hydrogenated amorphous silicon,” Phys. Rev. B 76, 045212 (2007). [cited by applicant]
Balakrishnan, S. C. P. Thermadam, M. Mitkova, and M. N. Kozicki, “A Low Power Non-Volatile Memory Element Based on Copper in Deposited Silicon Oxide,” in 2006 7th Annual Non-Volatile Memory Technology Symposium, 2006, p… [cited by applicant]
Barranco, F. Yubero, J. P. Espinos, P. Groening, A. R. Gonzalez-Elipe, Electronic state characterization of SiOx thin films prepared by evaporation, J. Appl. Phys. 97, 113714 (2005). [cited by applicant]
Barranco, J. A. Mejias, J. P. Espinos, A. Caballero, A. R. Gonzalez-Elipe, F. Yubero, Chemical stability of Si+n species in SiOx (x<2) thin films, J. Vac. Sci. Technol. A 19(1) Jan./Feb. 2001. [cited by applicant]
Barranco, J. Cotrino, F. Yubero, J. P. Espinos, A. R. Gonzalez-Elipe, Room temperature synthesis of porous SiO2 thin-films by plasma enhanced chemical vapor deposition, J. Vac. Sci. Technol. A (4), Jul./Aug. 2004. [cited by applicant]
Belandi et al., SiO2 Etch Rate Modification by ion Implantation, Solid State Phenomena, vol. 195, pp. 55-57, Dec. 2012. [cited by applicant]
Bernard, V. T. Renard, P. Gonon, and V. Jousseaume, “Back-end-of-line compatible Conductive Bridging RAM based on Cu and SiO2,” Microelectron. Eng., vol. 88, No. 5, pp. 814-816, 2011. [cited by applicant]
Bhattarai and D. A. Drabold, Vibrations in amorphous silica, J. Non. Cryst. Sol. 439 6 (2016). [cited by applicant]
Boyd and J. I. B. Wilson, A study on thin silicon dioxide films using infrared absorption techniques, J. App. Phys. 53 (6), pp. 4166-4171, Jun. 1982. [cited by applicant]
Cambou et al., PUF designed with ReRAM and ternary states; CISR 2016, pp. 1-8. [cited by applicant]
Cambou, F. Afghah, D. Sonderegger, J. Taggart, H. Barnaby, M. N. Kozicki, Ag conductive bridge RAMs for physical unclonable functions, Proceeding of the IEEE Host Conference, 2017, vol. 1, pp. 151-151. [cited by applicant]
Chen et al., “Total-Ionizing-Dose Effects on Resistance Stability of Programmable Metallization Cell Based Memory and Selectors,” IEEE Trans. Nucl. Sci., vol. 64, No. 1, pp. 269-276, 2017. [cited by applicant]
Chen, J. Wu, Q. Zhang and X. Su, Recent advancement of SiOx based anodes for lithium-ion batteries, J. Power Sources 363, 126 (2017). [cited by applicant]
Chen, S. Tappertzhofen, H. Barnaby, M. N. Kozicki, SiO2 based conductive bridging random access memory, J Electroceram (2017) 39:109-131. [cited by applicant]
Chen, W. et al., “Volatile and Non-Volatile Switching in Cu—SiO2 Programmable Metallization Cells”, IEEE Electron Device Letters, May 2016 [IEEE Date of Publication: Mar. 2016], vol. 37, No. 5, pp. 580-583 <DOI:10.1109/… [cited by applicant]
Choi et al., “Data clustering using memristor networks,” Scientific Reports, 5:10492, 2015. [cited by applicant]
De Los Santos Valladares et al., “Crystallization and electrical resistivity of Cu2O and CuO obtained by thermal oxidation of Cu thin films on SiO2/Si substrates,” Thin Solid Films, vol. 520, No. 20, pp. 6368-6374, 2012. [cited by applicant]
Dearnaley, A. Stoneham, D. Morgan, Electrical phenomena in amorphous oxide films. Rep. Prog. Phys. 33, 1129 (1970). [cited by applicant]
Ghijsen et al., “Electronic structure of Cu2O and CuO,” Phys. Rev. B, vol. 38, No. 16, pp. 11322-11330, 1988. [cited by applicant]
Gilbert et al. “A 0.6 V 8 pJ/write Non-Volatile CBRAM Macro Embedded in a Body Sensor Node for Ultra Low Energy Applications.” VLSI Circuits (VLSIC), 2013 Symposium on. IEEE, 2013. [cited by applicant]
Gopalan, M. N. Kozicki, S. Bhagat, S. C. Puthen Thermadam, T. L. Alford, and M. Mitkova, “Structure of copper-doped tungsten oxide films for solid-state memory,” J. Non. Cryst. Solids, vol. 353, No. 18-21, pp. 1844-1848… [cited by applicant]
Gopalan, M. N. Kozicki, S. Bhagat, S. C. Puthen Thermadam, T. L. Alford, and M. Mitkova, “Structure of coppe-doped tungsten oxide films for solid-state memory, ” J. Non. Cryst. Solids, vol. 353, No. 18-21 pp. 1844-1848,… [cited by applicant]
Grassini, M. Ishtaiwi, M. Parvis, L. Benussi, S. Bianco, S. Colafranceschi, D. Piccolo, SiOx coated plastic fiber optic sensor for gas monitoring in RPC, Proceeding of Science, (RPC2012)072. [cited by applicant]
Herasimenka, W. J. Dauksher, M. Boccard, S. Bowden, ITO/SiOx:H stacks for silicon heterojunction solar cells, Solar Energy Materials & Solar Cells 158 (2016) pp. 98-101. [cited by applicant]
Hernandez, et al., Tailoring the Surface density of silicon nanocrystals embedded in SiOx single layers, J. Appl. Phys. 114, 233101 (2013). [cited by applicant]
International Preliminary Report on Patentability for Application No. PCT/US2018/024156 dated Oct. 3, 2019 (14 pages). [cited by applicant]
International Search Report and Written Opinion for Application No. PCT/US2018/024156 dated Jul. 13, 2018 (16 pages). [cited by applicant]
International Search Report and Written Opinion for Application No. PCT/US2021/030157 dated Sep. 22, 2021 (16 pages). [cited by applicant]
Jayatissa, K. Guo, and A. C. Jayasuriya, “Fabrication of cuprous and cupric oxide thin films by heat treatment,” Appl. Surf. Sci., vol. 255, No. 23, pp. 9474-9479, 2009. [cited by applicant]
Kang, B. Arnold, C. J. Summers, B. K. Wagner, Synthesis of silicon quantum dot buried SiOx films with controlled luminescent properties for solid-state lighting, Nanotechnology 17 (2006) pp. 4477-4482. [cited by applicant]
Kim et al., “A Physical Unclonable Function with Redox-based Nanoionic Resistive Memory,” arXiv:1611.04665v1 [cs.ET], (2016). [cited by applicant]
Klingsporn, S. Kirner, C. Villringer , D. Abou-Ras, I. Costina, M. Lehmann, and B. Stannowski, Resolving the nanostructure of plasma-enhanced chemical vapor deposited nanocrystalline SiOx layers for application in solar… [cited by applicant]
Koffyberg and F. A. Benko, “A photoelectrochemical determination of the position of the conduction and valence band edges of p-type CuO,” J. Appl. Phys., vol. 53, No. 2, pp. 1173-1177, 1982. [cited by applicant]
Kozicki and H. J. Barnaby, “Conductive bridging random access memory—Materials, devices and applications,” Semicond. Sci. Technol., vol. 31, No. 11, 2016. [cited by applicant]
Kozicki et al., “Nonvolatile memory based on solid electrolytes,” in Proc. IEEE Non-Volatile Memory Technol. Symp., pp. 10-17, 2004. [cited by applicant]
Kozicki et al., “Nanoscale memory elements based on solid-state electrolytes,” IEEE Trans. Nanotechnol, vol. 4, pp. 331-338, May 2005. [cited by applicant]
Kozicki et al., “Programmable metallization cell memory based on Ag—Ge—S and Cu—Ge—S solid electrolytes,” Proc. NVMTS, p. 83-89, 2005. [cited by applicant]
Kozicki, C. Gopalan, M. Balakrishnan, and M. Mitkova, “A low-power nonvolatile switching element based on copper-tungsten oxide solid electrolyte,” IEEE Trans. Nanotechnol., vol. 5, No. 5, pp. 535-544, 2006. [cited by applicant]
Kozicki, et al., Copper-Silicon oxide resistive memory: A versatile back-end-of-line technology, invited presentation, Memrisys 2019, Dresden, Jul. 8-11. [cited by applicant]
Kozicki, M. Mitkova, M. Park, M. Balakrishnan, and C. Gopalan, “Information storage using nanoscale electrodeposition of metal in solid electrolytes,” Superlattices Microstruct., vol. 34, No. 3-6, pp. 459-465, 2003. [cited by applicant]
Kozicki, P. Maroufkhani, and M. Mitkova, “Valving in microchannels via electrodeposition on solid electrolytes,” vol. 1, No. Jan., pp. 716-719, 2005. [cited by applicant]
Kuzmin, A. Anspoks, A. Kalinko, J. Timoshenko, and R. Kalendarev, “X-ray absorption spectroscopy of Cu-doped WO3 films for use in electrochemical metallization cell memory,” J. Non. Cryst. Solids, vol. 401, pp. 87-91, 2… [cited by applicant]
Kwon et al., “Nanoscale CuO solid-electrolyte-based conductive-bridging-random-access-memory cell operating multi-level-cell and 1selector1resistor,” J. Mater. Chem. C, vol. 3, No. 37, pp. 9540-9550, 2015. [cited by applicant]
Lucovsky, J. Manitini, Low temperature growth of silicon dioxide films: A study of chemical bonding by ellipsometry and infra-red spectroscopy, J. Vac. Sci. Technol. B 5 (2) Mar./Apr. 1987. [cited by applicant]
Mehonic, A. J. Kenyon, Emulating the Electrical Activity of the Neuron Using a Silicon Oxide RRAM Cell, Front. Neurosci. 10:57, 2016. [cited by applicant]
Mehonic, A. L. Shluger, D. Gao, I. Valov, E. Miranda, D. Ielmini, A. Bricalli, E. Ambrosi, C. Li, J. J. Yang, Q. Xia, A. J. Kenyon, Silicon Oxide (SiOx): A Promising Material for Resistance Switching?, Adv. Mater. 2018,… [cited by applicant]
Mehonic, M. Buckwell, L. Montesi, L. Garnett, S. Hudziak, S. Fearn, R. Chater, D. McPhail, A. J. Kenyon, Structural changes and conductance thresholds in metal-free intrinsic SiOx resistive random access memory, J. Appl… [cited by applicant]
Mehonic, M. Buckwell, L. Montesi, M. S. Munde, D. Gao, S. Hudziak, R. J. Chater, S. Fearn, D. McPhail, M. Bosman, A. L. Shluger, A. J. Kenyon, Nanoscale Transformations in Metastable, Amorphous, Silicon-Rich Silica Adv.… [cited by applicant]
Mehonic, M.S. Munde, W.H. Ng, M. Buckwell, L. Montesi, M. Bosman, A.L. Shluger, A.J. Kenyon, Intrinsic resistance switching in amorphous silicon oxide for high performance SiOx ReRAM devices, Microelectronic Engineering… [cited by applicant]
Mehonic, S. Cueff, M. Wojdak, S. Hudziak, C. Labbe, R. Rizk, A. J Kenyon, Electrically tailored resistance switching in silicon oxide, Nanotechnology 23 (2012) 455201 (9pp). [cited by applicant]
Mehonic, S. Cueff, M. Wojdak, S. Hudziak, O. Jambois, C. Labbé, B. Garrido, R. Rizk, A. J. Kenyon, Resistive switching in silicon suboxide films, J. Appl. Phys. 111, 074507 (2012). [cited by applicant]
Mickel et al., “A physical model of switching dynamics in tantalum oxide memristive devices,” Appl. Phys. Lett., vol. 102, p. 223502, 2013. [cited by applicant]
Moore, “Moore's Law , Electronics,” vol. 38, No. 8, p. 114, 1965. [cited by applicant]
Munde, A. Mehonic, W. H. Ng , M. Buckwell, L. Montesi, M. Bosman, A. L. Shluger, A. J. Kenyon, Intrinsic Resistance Switching in Amorphous Silicon Suboxides: The Role of Columnar Microstructure, Scientific Reports 7: 92… [cited by applicant]
Murarka, “Multilevel interconnections for ULSI and GSI era,” Mater. Sci. Eng. R Reports, vol. 19, No. 3-4, pp. 87-151, 1997. [cited by applicant]
Nandakumar, S. et al., “Physics-based switching model for Cu/SiO2/W quantum memristor”, 2016 74th Annual Device Research Conference (DRC) (Jun. 19-22, 2016, Newark, DE, USA), Date Added to IEEE Xplore: Aug. 2016, 2 page… [cited by applicant]
Nesheva, C. Raptis, A. Perakis, I. Beneva, Z. Aneva, Z. Levi, S. Alexandrova, H. Hofmeister, Raman scattering and photoluminescence from Si nanoparticles in annealed SiOx thin films, J. Appl. Phys., vol. 92, No. 8, pp. … [cited by applicant]
Nili et al., “Donor-induced performance tuning of amorphous SrTiO3 memristive nanodevices: Multistate resistive switching and mechanical tunability,” Advanced Functional Materials, vol. 25, No. 21, pp. 3172-3182, 2015. [cited by applicant]
Nili et al., “Nanoscale resistive switching in amorphous perovskite oxide (a-SrTiO3) memristors,” Advanced Functional Materials, vol. 24, No. 43, pp. 6741-6750, 2014. [cited by applicant]
Novikov, V. A. Gritsenko, Short-range order in amorphous SiOx by x-ray photoelectron spectroscopy, J. Appl. Phys. 110, 014107 (2011). [cited by applicant]
O'Leary, J. H. Thomas, Characterization of reactively evaporated SiOx thin films, Journal of Vacuum Science & Technology A 5, 106 (1987). [cited by applicant]
Oxford Instruments, “Basic PECVD Plasma Processes,” <https://nanolab.berkeley.edu/process_manual/chap6/6.20PECVD.pdf> dated 2003. [cited by applicant]
Oxley, Electroforming, switching and memory effects in oxide thin films. Act. Passive Electron. Compon. 3, 217, 1977. [cited by applicant]
Pai, S. S. Chao, Y. Takagi, G. Lucovsky, Infrared spectroscopic study of SiOx films produced by plasma enhanced chemical vapor deposition, J. Vac. Sci. Technol. A 4 (3) May/Jun. 1986. [cited by applicant]
Pandey, P. Biswas and D. A. Drabold, Force enhanced atomic refinement: application to amorphous silica and amorphous silicon, Phys. Rev. B 92 155205 (2015). [cited by applicant]
Park, K.S. Kim, M.H. Jung, WJ Cho and J. Jung, Electrical Characteristics of SiO2/High-k Dielectric Stacked Tunnel Barriers for Nonvolatile Memory Applications. Journal of The Korean Physical Society vol. 55. 10.3938/jk… [cited by applicant]
Pearton, W. H. Heo, M. Ivill, D. P. Norton, and T. Steiner, “Dilute magnetic semiconducting oxides,” Semicond. Sci. Technol., vol. 19, No. 10, pp. R59-R74, 2004. [cited by applicant]
Pelgrom et al., “Matching properties of MOS transistors,” IEEE Journal of solid-state circuits, vol. 24, No. 5, pp. 1433-1439, 1989. [cited by applicant]
Pliskin, Comparison of properties of dielectric films deposited by various methods, Journ. of Vac. Sci. and Tech., vol. 14, No. 5, pp. 1064-1081, Sep./Oct. 1977. [cited by applicant]
Prasai et al., High precision detection of change in intermediate range order of amorphous zirconia-doped tantala thin films due to annealing, Phys. Rev. Lett. 123 045501 (2019). [cited by applicant]
Ramírez-Ortiz et al., “A catalytic application of Cu2O and CuO films deposited over fiberglass,” Appl. Surf. Sci., vol. 174, No. 3-4, pp. 177-184, 2001. [cited by applicant]
Remache, et al. Design of porous silicon/PECVD SiOx antireflection coatings for silicon solar cells, Materials Science and Engineering B 176 (2011), pp. 45-48. [cited by applicant]
Schindler, M. Weides, M. N. Kozicki, R. Waser, Low current resistive switching in Cu—SiO2 cells, Appl. Phys. Lett. 92, 122910 (2008). [cited by applicant]
Shallenberger, Determination of chemistry and microstructure in SiOx (0.1<x<0.8) films by x-ray photoelectron spectroscopy, Journal of Vacuum Science & Technology A 14, 693 (1996). [cited by applicant]
Simmons, R. R. Verderber, New thin-film resistive memory, The Radio and Electronic Engineer, Aug. 1967. [cited by applicant]
Sopinskyy, V. Khomchenko, Electroluminescence in SiOx films and SiOx-film-based systems, Current Opinion in Solid State and Materials Science 7 (2003) 97-109. [cited by applicant]
Subedi, K. Prasai, M. N. Kozicki, and D. A. Drabold, Structural origins of electronic conduction in amorphous copper-doped alumina, Phys. Rev. Materials 3 065605 (2019). [cited by applicant]
Suzuki, Y. Ishikawa, M. Isshiki, and Y. Waseda, “Native Oxide Layers Formed on the Surface of Ultra High-Purity Iron and Copper Investigated by Angle Resolved XPS,” Mater. Trans. JIM, vol. 38, No. 11, pp. 1004-1009, 199… [cited by applicant]
Takayanagi, S. Akao, T. Yanagisawa, N. Nakaso, Y. Tsukahara, S. Hagihara, T. Oizumi, N. Takeda, T. Tsuji, K. Yamanaka, Detection of Trace Water Vapor Using SiOx-Coated Ball SAW Sensor, Materials Transactions, vol. 55, N… [cited by applicant]
Thapa, B. Bhattarai, M. N. Kozicki, K. N. Subedi and D. A. Drabold, Structure and charge transport of amorphous Cu-doped tantalum pentoxide: an ab initio study, Phys. Rev. Materials 4 064603 (2020). [cited by applicant]
Tomozeiu, Electrical conduction and dielectric relaxation of a-SiOx (0bxb2) thin films deposited by reactive RF magnetron sputtering, Thin Solid Films 516 (2008) 8199-8204. [cited by applicant]
Tsunoda et al., “Low power and high speed switching of Ti-doped NiO ReRAM under the unipolar voltage source of less than 3 V,” in IEEE International Electron Devices Meeting (IEDM), 2007, pp. 767-770. [cited by applicant]
U.S. Appl. No. 17/025,523, filed Sep. 18, 2020, Kozicki. [cited by applicant]
U.S. Appl. No. 17/050,750, filed Oct. 26, 2020, Kozicki et al. [cited by applicant]
U.S. Appl. No. 17/072,701, filed Oct. 16, 2020, Kozicki. [cited by applicant]
U.S. Appl. No. 17/100,028, filed Nov. 20, 2020, Kozicki. [cited by applicant]
U.S. Appl. No. 17/112,668, filed Dec. 4, 2020, Kozicki. [cited by applicant]
United States Patent Office Action for U.S. Appl. No. 17/025,523 dated Jul. 1, 2021 (14 pages). [cited by applicant]
Valov et al., “Electrochemical metallization memories—Fundamentals, applications, prospects,” Nanotechnology, vol. 22, p. 254003, 2011. [cited by applicant]
Valov et al., “Nanobatteries in redox-based resistive switches require extension of memristor theory,” Nature Communications, vol. 4, p. 1771, 2013. [cited by applicant]
Van Hapert, Hopping Conduction and Chemical Structure, a study on Silicon Suboxides, PHD Thesis, Universiteit Utrecht, 2012, ISBN 90-393-3063-8. (159 pages). [cited by applicant]
Wang, Yang Yang, Jae-Hwang Lee, Vera Abramova, Huilong Fei, Gedeng Ruan, Edwin L. Thomas, James M. Tour, Nanoporous Silicon Oxide Memory, Nano Lett. 2014, 14, 4694-4699. [cited by applicant]
Waser et al., “Nanoionics-based resistive switching memories,” Nature Materials, vol. 6, No. 11, pp. 833-840, 2007. [cited by applicant]
Waser et al., “Redox-based resistive switching memories—nanoionic mechanisms, prospects, and challenges,” Advanced materials, vol. 21, No. 25-26, pp. 2632-2663, 2009. [cited by applicant]
Willers et al., MEMS-based gyroscope as PUFs; CCS'16, Oct. 24-28, 2016, pp. 591-602. [cited by applicant]
Yang, Y. et al., “Novel Complementary Resistive Switch Crossbar Memory Write and Read Schemes”, IEEE Transactions on Nanotechnology, Mar. 2015 [IEEE Date of Publication: Jan. 2015], vol. 14, No. 2, pp. 346-357 <DOI:10.1… [cited by applicant]
Yoshida, I. Umezu, N. Sakamoto, M. Inada, A. Sugimura, Effect of structure on radiative recombination processes in amorphous silicon suboxide prepared by rf sputtering, J. Appl. Phys. 92, 5936 (2002). [cited by applicant]
Zheng, C. N. Xu, E. Tanaka, Y. Tomokiyo, M. Suzuki, and E. S. Otabe, “Charge-spin-orbital coupling in CuO,” Phys. C Supercond., vol. 357-360, pp. 181-185, 2001. [cited by applicant]
Zhou, Tao Du, Lijie Guo, Morten M. Smedskjaer, Mathieu Bauchy, New insights into the structure of sodium silicate glasses by force-enhanced atomic refinement, J. Non. Cryst. Sol. 536 120006 (2020). [cited by applicant]