Granted Patent B2

US 12,635,485 · App. 18/022,625 · Granted May 19, 2026

Inventors: Shunpei Yamazaki (Tokyo, JP); Shunichi Ito (Atsugi, JP); Yoshihiro Komatsu (Ebina, JP); Shinobu Kawaguchi (Isehara, JP); Shinya Sasagawa (Chigasaki, JP)

Assignee: Semiconductor Energy Laboratory Co., Ltd.

H01L21/477H01L21/02181H01L21/02266H01L21/0228H01L21/02345H01L21/02554H01L21/02565H01L21/02631

Abstract

Claims (39)

1 . A method for manufacturing a semiconductor device, the method comprising the steps of:

forming a first insulator;

forming a conductor over the first insulator;

forming a second insulator over the conductor;

forming a third insulator over the second insulator;

forming an oxide over the third insulator;

performing microwave treatment after the oxide is formed so that hydrogen in the oxide is removed and oxygen is supplied to the oxide;

performing first heat treatment; and

performing second heat treatment following the first heat treatment,

wherein a temperature of the first heat treatment is lower than a temperature of the second heat treatment, and

wherein the microwave treatment is performed in an atmosphere containing oxygen.

2 . A method for manufacturing a semiconductor device, the method comprising the steps of:

forming a first insulator;

forming a conductor over the first insulator;

forming a second insulator over the conductor;

forming a third insulator over the second insulator;

forming an oxide over the third insulator;

performing first heat treatment so that hydrogen in the oxide and the third insulator is removed and absorbed into the second insulator; and

performing second heat treatment following the first heat treatment so that hydrogen in the second insulator is removed and absorbed into the first insulator,

wherein a temperature of the first heat treatment is lower than a temperature of the second heat treatment.

3 . The method for manufacturing the semiconductor device, according to claim 1 ,

wherein the first heat treatment is performed within a range of 250° C. to 450° C., and

wherein the second heat treatment is performed within a range of 450° C. to 600° C.

4 . The method for manufacturing the semiconductor device, according to claim 1 ,

wherein the first insulator is formed using a sputtering target comprising aluminum and a gas comprising oxygen, and

wherein the second insulator comprises a metal oxide comprising hafnium and is formed by an ALD method.

5 . The method for manufacturing the semiconductor device, according to claim 1 ,

wherein the oxide is formed by a sputtering method and comprises indium, gallium, and zinc.

6 . The method for manufacturing the semiconductor device, according to claim 2 ,

wherein the first heat treatment is performed within a range of 250° C. to 450° C., and

wherein the second heat treatment is performed within a range of 450° C. to 600° C.

7 . The method for manufacturing the semiconductor device, according to claim 2 ,

wherein the first insulator is formed using a sputtering target comprising aluminum and a gas comprising oxygen, and

wherein the second insulator comprises a metal oxide comprising hafnium and is formed by an ALD method.

8 . The method for manufacturing the semiconductor device, according to claim 2 ,

wherein the oxide is formed by a sputtering method and comprises indium, gallium, and zinc.

9 . The method for manufacturing the semiconductor device, according to claim 2 , the method further comprising the step of:

performing microwave treatment after the oxide is formed so that hydrogen in the oxide is removed and oxygen is supplied to the oxide,

wherein the microwave treatment is performed in an atmosphere containing oxygen.

Assignments (1)

Priority Claims (1)

Continuity (1)

References Cited (45)