Polishing compostion for semiconductor process, manufacturing method of polishing composition and method for manufacturing semiconductor device by using the same
The present invention relates to a semiconductor process polishing composition and a semiconductor device manufacturing method in which the polishing composition is applied, and can provide a preparation method applied to a CMP process for an amorphous carbon layer, and thus exhibits a high polishing rate, prevents, during a CMP process, the re-adsorption of carbon residue on a semiconductor substrate and the contamination of a polishing pad, and stabilizes an accelerator in the polishing composition so that the storage stability thereof is excellent. In addition, provided is a semiconductor device manufacturing method in which the semiconductor process polishing composition is applied.
1 . A polishing composition for a semiconductor process, the polishing composition containing an abrasive particle, an accelerator, a stabilizer and a surfactant,
wherein the accelerator comprises a cerium salt,
wherein the stabilizer is an amino acid,
wherein the surfactant contains a nonionic fluorine-based polymer compound, and
wherein the polishing composition contains 0.5 to 5 parts by weight of the surfactant, 350 parts by weight to 750 parts by weight of the stabilizer, and 400 parts by weight to 800 parts by weight of the accelerator per 100 parts by weight of abrasive particles, and has a value, ranging from 0.5 to 2, which satisfies following Equation 1:
Ra
(
100
+
100
S
)
[
Equation
1
]
where, when an amorphous carbon layer (ACL) with a thickness of 2,000 Å is pressurized at a pressure of 2 psi for 60 seconds and polishing is performed under the condition that a speed of a carrier is 87 rpm, that a speed of a platen is 93 rpm, and that an inflow speed of a polishing composition is 200 ml/min, Ra depicts a value of a polishing rate measured in Å/min and S depicts parts by weight of a surfactant per 100 parts by weight of abrasive particles.
2 . The polishing composition of claim 1 , wherein the abrasive particle is selected from the group consisting of a metal oxide, an organic particle, an organic-inorganic composite particle, and a mixture thereof.
3 . The polishing composition of claim 1 , containing a pH adjuster.
4 . A method of manufacturing a semiconductor device, the method comprising:
1) a step of providing a polishing pad including a polishing layer;
2) a step of supplying the polishing composition of claim 1 to the polishing pad; and
3) a step of polishing a polishing target while causing relative rotation of the polishing target in such a manner that a surface of the polishing target that is to be polished is brought into contact with a polishing surface of the polishing layer.
5 . A method of manufacturing a polishing composition for a semiconductor process, the method comprising:
a step of manufacturing a polishing solution by placing a stabilizer and an accelerator into a solvent and mixing the solvent with the stabilizer and the accelerator,
where in the accelerator comprises a cerium salt,
wherein the stabilizer is an amino acid;
a step of adjusting a pH of the polishing solution by mixing the polishing solution with a pH adjuster; and
a step of mixing the pH-adjusted polishing solution with a surfactant and an abrasive particle,
wherein the surfactant contains a nonionic fluorine-based polymer compound, and
wherein the polishing composition contains the abrasive particle, the accelerator, the stabilizer, and the surfactant,
wherein the polishing composition contains 0.5 to 5 parts by weight of the surfactant, 350 parts by weight to 750 parts by weight of the stabilizer, and 400 parts by weight to 800 parts by weight of the accelerator per 100 parts by weight of abrasive particles and has a value, ranging from 0.5 to 2, which satisfies following Equation 1:
Ra
(
100
+
100
S
)
[
Equation
1
]
where, when an amorphous carbon layer (ACL) with a thickness of 2,000 Å is pressurized at a pressure of 2 psi for 60 seconds and polishing is performed under the condition that a speed of a carrier is 87 rpm, that a speed of a platen is 93 rpm, and that an inflow speed of a polishing composition is 200 ml/min, Ra depicts a value of a polishing rate measured in Å/min and S depicts parts by weight of a surfactant per 100 parts by weight of abrasive particles.
6 . The method of claim 5 , wherein in the step of manufacturing the polishing solution, a first polishing solution is manufactured by mixing the solvent with a stabilizer, and the first polishing solution is mixed with an accelerator.