Power semiconductor device with voltage clamp circuit
A power semiconductor device includes: a main power switch having a drain, source, and gate; and a voltage clamp circuit in parallel with the main power switch and having a clamp voltage less than a breakdown voltage of the main power switch. The voltage clamp circuit includes: a pulldown switch having a normally-on gate electrically connected to the source of the main power switch; a plurality of series-connected diodes electrically connected between the drain of the main power switch and a drain of the pulldown switch; a voltage clamp device electrically connected between a source of the pulldown switch and the source of the main power switch; and a second power switch having a normally-off gate electrically connected to the drain of the pulldown switch, a drain electrically connected to the drain of the main power switch, and a source electrically connected to the source of the pulldown switch.
1 . A power semiconductor device, comprising:
a main power switch having a drain, a source, and a gate; and
a voltage clamp circuit in parallel with the main power switch and having a clamp voltage less than a breakdown voltage of the main power switch,
wherein the voltage clamp circuit comprises:
a pulldown switch having a normally-on gate electrically connected to the source of the main power switch;
a plurality of series-connected diodes electrically connected between the drain of the main power switch and a drain of the pulldown switch;
a voltage clamp device electrically connected between a source of the pulldown switch and the source of the main power switch; and
a second power switch having a normally-off gate electrically connected to the drain of the pulldown switch, a drain electrically connected to the drain of the main power switch, and a source electrically connected to the source of the pulldown switch.
2 . The power semiconductor device of claim 1 , wherein the main power switch is a first normally-off GaN transistor, wherein the pulldown switch is a normally-on GaN transistor, and wherein the second power switch is a second normally-off GaN transistor.
3 . The power semiconductor device of claim 2 , wherein the first normally-off GaN transistor, the normally-on GaN transistor and the second normally-off GaN transistor are monolithically integrated in the same GaN die.
4 . The power semiconductor device of claim 2 , wherein the first normally-off GaN transistor and the second normally-off GaN transistor have a same breakdown voltage, and wherein the second normally-off GaN transistor has a smaller area than the first normally-off GaN transistor.
5 . The power semiconductor device of claim 1 , wherein the voltage clamp device is a Zener diode, wherein a cathode of the Zener diode is electrically connected to the source of the pulldown switch, and wherein an anode of the Zener diode is electrically connected to the source of the main power switch.
6 . The power semiconductor device of claim 1 , wherein the voltage clamp device comprises:
a transistor;
a plurality of diodes electrically connected between a drain of the transistor and a gate of the transistor; and
a resistor electrically connected between a source of the transistor and the gate of the transistor,
wherein the drain of the transistor is electrically connected to the source of the pulldown switch,
wherein the source of the transistor is electrically connected to the source of the main power switch.
7 . The power semiconductor device of claim 1 , wherein the plurality of series-connected diodes comprises a plurality of series-connected ESD (electrostatic discharge) protection diodes.
8 . The power semiconductor device of claim 1 , wherein the clamp voltage is in a range of 600V to 900V.
9 . The power semiconductor device of claim 1 , wherein the voltage clamp circuit comprises a resistor electrically connected between the source and the drain of the pulldown switch.
10 . A power semiconductor device, comprising:
a main bidirectional power switch having a first source/drain, a second source/drain, a first gate, and a second gate; and
a voltage clamp circuit in parallel with the main bidirectional power switch and having a clamp voltage less than a breakdown voltage of the main bidirectional power switch,
wherein the voltage clamp circuit comprises:
a second bidirectional power switch having a first normally-off gate and a second normally-off gate;
a first normally-on pulldown switch, a first plurality of series-connected diodes, and a first voltage clamp device collectively configured to turn on the first normally-off gate of the second bidirectional power switch in response to an over voltage condition during unclamped inductive switching of the power semiconductor device; and
a second normally-on pulldown switch, a second plurality of series-connected diodes, and a second voltage clamp device collectively configured to turn on the second normally-off gate of the second bidirectional power switch in response to the over voltage condition.
11 . The power semiconductor device of claim 10 , wherein the first gate and the second gate of the main bidirectional power switch are each a normally-off gate.
12 . The power semiconductor device of claim 10 , wherein the first gate and the second gate of the main bidirectional power switch are each a normally-on gate.
13 . The power semiconductor device of claim 10 , wherein one of the first gate and the second gate of the main bidirectional power switch is a normally-off gate, and wherein the other one of the first gate and the second gate of the main bidirectional power switch is a normally-on gate.
14 . The power semiconductor device of claim 10 , wherein:
a normally-on gate of the first normally-on pulldown switch is electrically connected to the first source/drain of the main bidirectional power switch;
the first plurality of series-connected diodes is electrically connected between the second source/drain of the main bidirectional power switch and a drain of the first normally-on pulldown switch;
the first voltage clamp device is electrically connected between a source of the first normally-on pulldown switch and the first source/drain of the main bidirectional power switch;
a normally-on gate of the second normally-on pulldown switch is electrically connected to the second source/drain of the main bidirectional power switch;
the second plurality of series-connected diodes is electrically connected between the first source/drain of the main bidirectional power switch and a drain of the second normally-on pulldown switch;
the second voltage clamp device is electrically connected between a source of the second normally-on pulldown switch and the second source/drain of the main bidirectional power switch;
the first normally-off gate of the second bidirectional power switch is electrically connected to the drain of the first normally-on pulldown switch;
a first source/drain of the second bidirectional power switch is electrically connected to the source of the first normally-on pulldown switch;
the second normally-off gate of the second bidirectional power switch is electrically connected to the drain of the second normally-on pulldown switch; and
a second source/drain of the second bidirectional power switch is electrically connected to the source of the second normally-on pulldown switch.
15 . The power semiconductor device of claim 10 , wherein the first voltage clamp device is a first Zener diode, a cathode of the first Zener diode is electrically connected to a source of the first normally-on pulldown switch, and an anode of the first Zener diode is electrically connected to the first source/drain of the main bidirectional power switch, and wherein the second voltage clamp device is a second Zener diode, a cathode of the second Zener diode is electrically connected to a source of the second normally-on pulldown switch, and an anode of the second Zener diode is electrically connected to the second source/drain of the main bidirectional power switch.
16 . The power semiconductor device of claim 10 ,
wherein the first voltage clamp device comprises:
a first transistor;
a first plurality of diodes electrically connected between a drain of the first transistor and a gate of the first transistor; and
a first resistor electrically connected between a source of the first transistor and the gate of the first transistor,
wherein the second voltage clamp device comprises:
a second transistor;
a second plurality of diodes electrically connected between a drain of the second transistor and a gate of the second transistor; and
a second resistor electrically connected between a source of the second transistor and the gate of the second transistor,
wherein the drain of the first transistor is electrically connected to a source of the first normally-on pulldown switch,
wherein the source of the first transistor is electrically connected to the first source/drain of the main bidirectional power switch,
wherein the drain of the second transistor is electrically connected to a source of the second normally-on pulldown switch, and
wherein the source of the second transistor is electrically connected to the second source/drain of the main bidirectional power switch.
17 . The power semiconductor device of claim 10 , wherein the first plurality of series-connected diodes comprises a first plurality of series-connected ESD (electrostatic discharge) protection diodes, and wherein the second plurality of series-connected diodes comprises at a second plurality of series-connected ESD protection diodes.
18 . The power semiconductor device of claim 10 , wherein the clamp voltage is in a range of 600V to 900V.