MRAM with a multi-component, multi-layer bottom electrode
A magnetoresistive random access memory (MRAM) structure, a system, and a method of forming an MRAM structure. The MRAM structure may include a bottom electrode. The bottom electrode may include a diffusion barrier. The bottom electrode may further include a dielectric that surrounds one or more sidewalls of the diffusion barrier. The method may include depositing a first dielectric, where a metal component remains uncovered by the dielectric. The method may further include depositing a diffusion barrier on at least the metal component. The method may further include depositing an electrode layer on the first dielectric and the diffusion barrier, resulting in a bottom electrode comprising the electrode layer, the first dielectric, and the diffusion barrier.
1 . A magnetoresistive random access memory (MRAM) structure, wherein the MRAM structure comprises:
a bottom electrode, the bottom electrode comprising:
a diffusion barrier;
a dielectric that surrounds all sidewalls of the diffusion barrier; and
an electrode layer covering entire top surfaces of the diffusion barrier and the dielectric.
2 . The MRAM structure of claim 1 , wherein the diffusion barrier comprises at least one of TaN and Ru.
3 . The MRAM structure of claim 2 , wherein the electrode layer comprises at least one of TiN and W.
4 . The MRAM structure of claim 1 , further comprising:
an MRAM stack, wherein the MRAM stack comprises one or more stacks of ferromagnetic plates and insulator layers.
5 . The MRAM structure of claim 1 , wherein the dielectric comprises at least one of aluminum oxide, hafnium oxide, silicon oxide, SiN, and SiCN.
6 . The MRAM structure of claim 1 , wherein the diffusion barrier has a thickness between 10 nm and 50 nm.
7 . A system, wherein the system comprises:
a magnetoresistive random access memory (MRAM) structure, the MRAM structure comprising:
a bottom electrode, the bottom electrode comprising:
a diffusion barrier,
a dielectric that surrounds all sidewalls of the diffusion barrier; and
an electrode layer covering entire top surfaces of the diffusion barrier and the dielectric;
an MRAM stack; and
a top electrode.
8 . The system of claim 7 , wherein the diffusion barrier comprises at least one of TaN and Ru.
9 . The system of claim 8 , wherein the electrode layer comprises at least one of TiN and W.
10 . The system of claim 7 , wherein the diffusion barrier has a thickness between 10 nm and 50 nm.
11 . The system of claim 7 , further comprising a metal component, wherein the metal component is capped by the diffusion barrier.
12 . The system of claim 11 , wherein the diffusion barrier has a width less than or equal to the metal component.