Solid-state imaging device, manufacturing method thereof, and electronic apparatus
A solid-state imaging device having a backside illuminated structure, includes: a pixel region in which pixels each having a photoelectric conversion portion and a plurality of pixel transistors are arranged in a two-dimensional matrix; an element isolation region isolating the pixels which is provided in the pixel region and which includes a semiconductor layer provided in a trench by an epitaxial growth; and a light receiving surface at a rear surface side of a semiconductor substrate which is opposite to a multilayer wiring layer.
1. A light detecting device, comprising:
a semiconductor substrate including a first plane that receives incident light and a second plane opposite to the first plane;
first to fourth photoelectric conversion regions disposed in the semiconductor substrate,
wherein the first photoelectric conversion region is adjacent to the second photoelectric conversion region, the third photoelectric conversion region, and the fourth photoelectric conversion region in a plan view;
a separation region disposed in the semiconductor substrate, wherein the separation region includes first to fourth parts, wherein the first part of the separation region is disposed between the first and second photoelectric conversion regions in the plan view, and wherein the second part of the separation region is disposed between the second and third photoelectric conversion regions in the plan view,
wherein the third part of the separation region is disposed between the third and fourth photoelectric conversion regions in the plan view, and wherein the fourth part of the separation region is disposed between the first and fourth photoelectric conversion regions in the plan view;
a floating diffusion region shared by the first to fourth photoelectric conversion regions, wherein the floating diffusion region is disposed between the first part of the separation region and the third part of the separation region in the plan view, and wherein the floating diffusion region is disposed between the second part of the separation region and the fourth part of the separation region in the plan view; and
a multi-wiring layer disposed on the second plane of the semiconductor substrate.
2. The light detecting device according to claim 1 , wherein the separation region includes a void.
3. The light detecting device according to claim 2 , wherein the void is not extended over the first plane.
4. The light detecting device according to claim 2 , wherein the semiconductor substrate includes a p-type region, and wherein the p-type region is disposed between the void and each photoelectric conversion region in a cross-sectional view.
5. The light detecting device according to claim 1 , wherein the separation region includes a first film and a second film.
6. The light detecting device according to claim 5 , wherein the first film includes an insulating film.
7. The light detecting device according to claim 1 , wherein the first photoelectric conversion region is adjacent to the second photoelectric conversion region in a first direction in the plan view, wherein the second photoelectric conversion region is adjacent to the third photoelectric conversion region in a second direction in the plan view, and wherein the first direction is perpendicular to the second direction.
8. The light detecting device according to claim 7 , wherein the first photoelectric conversion region is adjacent to the fourth photoelectric conversion region in the first direction in the plan view.
9. The light detecting device according to claim 7 , wherein the first part of the separation region does not contact the third part of the separation region in the plan view, and wherein the second part of the separation region does not contact the fourth part of the separation region in the plan view.
10. An electronic device, comprising:
a light detecting device, comprising:
a semiconductor substrate including a first plane that receives incident light and a second plane opposite to the first plane;
first to fourth photoelectric conversion regions disposed in the semiconductor substrate,
wherein the first photoelectric conversion region is adjacent to the second photoelectric conversion region, the third photoelectric conversion region, and the fourth photoelectric conversion region in a plan view;
a separation region disposed in the semiconductor substrate, wherein the separation region includes first to fourth parts, wherein the first part of the separation region is disposed between the first and second photoelectric conversion regions in the plan view, and wherein the second part of the separation region is disposed between the second and third photoelectric conversion regions in the plan view,
wherein the third part of the separation region is disposed between the third and fourth photoelectric conversion regions in the plan view, and wherein the fourth part of the separation region is disposed between the first and fourth photoelectric conversion regions in the plan view;
a floating diffusion region shared by the first to fourth photoelectric conversion regions, wherein the floating diffusion region is disposed between the first part of the separation region and the third part of the separation region in the plan view, and wherein the floating diffusion region is disposed between the second part of the separation region and the fourth part of the separation region in the plan view; and
a multi-wiring layer disposed on the second plane of the semiconductor substrate.
11. The electronic device according to claim 10 , wherein the separation region includes a void.
12. The electronic device according to claim 11 , wherein the void is not extended over the first plane.
13. The electronic device according to claim 11 , wherein the semiconductor substrate includes a p-type region, wherein the p-type region is disposed between the void and each photoelectric conversion region in a cross-sectional view.
14. The electronic device according to claim 10 , wherein the separation region includes a first film and a second film.
15. The electronic device according to claim 14 , wherein the first film includes an insulating film.
16. The electronic device according to claim 10 , wherein the first photoelectric conversion region is adjacent to the second photoelectric conversion region in a first direction in the plan view, wherein the second photoelectric conversion region is adjacent to the third photoelectric conversion region in a second direction in the plan view, and wherein the first direction is perpendicular to the second direction.
17. The electronic device according to claim 16 , wherein the first photoelectric conversion region is adjacent to the fourth photoelectric conversion region in the first direction in the plan view.
18. The electronic device according to claim 16 , wherein the first part of the separation region does not contact the third part of the separation region in the plan view, and wherein the second part of the separation region does not contact the fourth part of the separation region in the plan view.