Deep ultraviolet light-emitting diode
A deep ultraviolet light-emitting diode is provided. A deep ultraviolet light-emitting diode according to one embodiment comprises: a substrate; an n-type semiconductor layer positioned on the substrate; a mesa which is disposed on the n-type semiconductor layer, comprises an active layer and a p-type semiconductor layer, and has a plurality of via-holes exposing the n-type semiconductor layer; n-ohmic contact layers contacting the n-type semiconductor layer in the via-holes; a p-ohmic contact layer contacting the p-type semiconductor layer; an n-pad metal layer electrically connected to the n-ohmic contact layers; a p-pad metal layer electrically connected to the p-ohmic contact layer; an n-bump electrically connected to the n-pad metal layer; and a p-bump electrically connected to the p-pad metal layer, wherein the p-pad metal layer is formed so as to surround the n-pad metal layer.
1 . A deep UV light emitting diode, comprising:
a substrate;
an n-type semiconductor layer disposed on the substrate;
a mesa disposed on the n-type semiconductor layer, including an active layer and a p-type semiconductor layer, and including a groove exposing the n-type semiconductor layer;
n-ohmic contact layers contacting the n-type semiconductor layer in the groove;
a p-ohmic contact layer contacting the p-type semiconductor layer;
an n-pad metal layer electrically connected to the n-ohmic contact layers;
a p-pad metal layer electrically connected to the p-ohmic contact layer;
an n-bump electrically connected to the n-pad metal layer; and
a p-bump electrically connected to the p-pad metal layer,
wherein:
the groove extends in a longitudinal direction of the mesa,
a difference between a length of the mesa in the longitudinal direction and a length of the groove is smaller than or equal to a width of each mesa region disposed on both sides of the groove.
2 . The deep UV light emitting diode of claim 1 , further comprising:
an n-capping layer covering the n-ohmic contact layers; and
a p-capping layer covering the p-ohmic contact layer.
3 . The deep UV light emitting diode of claim 1 ,
wherein a total area of the mesa region disposed on both sides of the groove exceeds ½ of a total area of the mesa.
4 . The deep UV light emitting diode of claim 1 ,
wherein corners of one end of the mesa region disposed on both sides of the groove have a curved shape.
5 . The deep UV light emitting diode of claim 1 ,
wherein depressions are formed at outer corners among the corners of one end of the mesa region disposed on both sides of the groove, respectively.
6 . The deep UV light emitting diode of claim 1 ,
wherein the groove includes a main groove extending in the longitudinal direction of the mesa; and
a plurality of sub grooves extending in a direction perpendicular to the main groove.
7 . The deep UV light emitting diode of claim 6 ,
wherein the plurality of sub-grooves includes grooves having different lengths and widths.
8 . The deep UV light emitting diode of claim 6 ,
wherein the deep UV light emitting diode has a symmetric structure with respect to a line passing through a center and parallel to the sub-groove.
9 . The deep UV light emitting diode of claim 6 ,
wherein the deep UV light emitting diode has an asymmetric structure with respect to the line passing through the center and parallel to the main groove.