Substrate processing apparatus and substrate processing method
Provided is a substrate processing apparatus including a processing chamber including a processing space, a substrate support configured to support a substrate in the processing chamber, an exhaust pipe arranged on a bottom wall of the processing chamber, an exhaust device configured to exhaust a fluid in the processing space via the exhaust pipe, a first supply pipe including a first portion inserted into the exhaust pipe and a second portion outside the exhaust pipe, and a fluid supply device configured to supply a fluid in a supercritical state to the processing space via the first supply pipe, wherein a first inlet at an end portion of the first supply pipe and an exhaust opening at an end portion of the exhaust pipe are on a central axis of the processing chamber.
1 . A substrate processing apparatus comprising:
a processing chamber including a processing space;
a substrate support configured to support a substrate in the processing chamber;
an exhaust pipe arranged on a bottom wall of the processing chamber, the exhaust pipe having an exhaust opening;
an exhaust device configured to exhaust a fluid in the processing space via the exhaust opening of the exhaust pipe;
a first supply pipe including a first portion arranged on the bottom wall of the processing chamber within the exhaust pipe and a second portion outside the exhaust pipe, the first supply pipe having a first inlet opening into the processing chamber and spaced apart from the exhaust opening; and
a fluid supply device configured to supply a processing fluid in a supercritical state to the processing space via the first inlet of the first supply pipe,
wherein the second portion of the first supply pipe is outside of the processing chamber.
2 . The substrate processing apparatus of claim 1 , wherein
the first inlet is at an end portion of the first supply pipe and the exhaust opening is at an end portion of the exhaust pipe,
the first inlet and the exhaust opening are on a central axis of the processing chamber, and
the first inlet of the first supply pipe vertically overlaps the exhaust opening of the exhaust pipe.
3 . The substrate processing apparatus of claim 2 , wherein, in a plan view, a center of the first inlet is inside the exhaust opening.
4 . The substrate processing apparatus of claim 2 , wherein, in a plan view, a center of the exhaust opening is inside the first inlet.
5 . The substrate processing apparatus of claim 1 , further comprising a second supply pipe arranged on an upper wall of the processing chamber, and configured to supply the processing fluid provided by the fluid supply device, to the processing space.
6 . The substrate processing apparatus of claim 5 , wherein a second inlet at an end portion of the second supply pipe at the upper wall of the processing chamber vertically overlaps the first inlet of the first supply pipe.
7 . The substrate processing apparatus of claim 6 , wherein a center of the first inlet of the first supply pipe, a center of the exhaust opening at an end portion of the exhaust pipe, and a center of the second inlet are aligned along the central axis of the processing chamber.
8 . The substrate processing apparatus of claim 5 , wherein the fluid supply device is configured to supply the processing fluid at a first temperature to a lower portion of the processing space via the first supply pipe, and to supply the processing fluid at a second temperature higher than the first temperature to an upper portion of the processing space via the second supply pipe.
9 . The substrate processing apparatus of claim 1 , wherein the exhaust pipe extends beyond an end portion of the first supply pipe toward the processing space.
10 . The substrate processing apparatus of claim 1 , wherein the first supply pipe extends beyond an end portion of the exhaust pipe toward the processing space.
11 . The substrate processing apparatus of claim 2 , further comprising a blocking plate covering the first inlet and the exhaust opening, the blocking plate configured to redirect the processing fluid from the first inlet towards a sidewall of the processing chamber, and wherein the blocking plate is coaxial with the processing chamber, the first inlet, and the exhaust opening and is placed at a level between a level of a bottom surface of the processing chamber and a level of the substrate support.
12 . The substrate processing apparatus of claim 1 , wherein an outer diameter of the first portion of the first supply pipe is less than an inner diameter of the exhaust pipe, and
the processing fluid contains carbon dioxide.
13 . A substrate processing apparatus comprising:
a processing chamber including a processing space, the processing chamber having a bottom wall with a mounting hole disposed at a center thereof;
a substrate support configured to support a substrate in the processing chamber;
a first supply pipe arranged inside the mounting hole and including a first inlet configured to inject a processing fluid in a supercritical state upward toward the center of the processing space;
an exhaust pipe including an exhaust opening arranged inside the mounting hole and configured to exhaust a fluid from the processing space; and
a blocking plate disposed over the first inlet and the exhaust opening, the blocking plate configured to redirect the processing fluid to a sidewall of the processing chamber,
wherein the first inlet and the exhaust opening are spaced apart from one another,
wherein the first inlet and the exhaust opening are coaxial with a central axis of the processing chamber.
14 . The substrate processing apparatus of claim 13 , wherein, in a plan view, a center of the first inlet is inside the exhaust opening formed at an end of the exhaust pipe, and
in a plan view, a center of the exhaust opening is inside the first inlet.
15 . The substrate processing apparatus of claim 13 , further comprising a second supply pipe arranged in an upper mounting hole of an upper wall of the processing chamber, and including a second inlet configured to inject the processing fluid into the processing space,
wherein the second inlet vertically overlaps the first inlet and the exhaust opening.
16 . The substrate processing apparatus of claim 15 , wherein a center of the first inlet, a center of the exhaust opening, and a center of the second inlet are aligned along the central axis of the processing chamber.
17 . The substrate processing apparatus of claim 13 , wherein the exhaust pipe comprises a first portion disposed within the first supply pipe and a second portion outside the first supply pipe, and
an outer diameter of the first portion of the exhaust pipe is less than an inner diameter of the first supply pipe.
18 . A substrate processing method comprising:
loading a substrate into a processing space of a processing chamber to align a central axis of the substrate with a central axis of the processing chamber;
supplying a processing fluid in a supercritical state into the processing chamber towards a bottom surface of the substrate via a first supply pipe that is coaxial with the central axis of the substrate and that is provided in a bottom wall of the processing chamber, the first supply pipe having a first inlet below a blocking plate positioned between the substrate and the bottom wall;
redirecting the processing fluid towards a sidewall of the processing chamber with the blocking plate; and
exhausting a fluid from a lower end of the processing chamber via an exhaust pipe having an exhaust opening coaxial with the central axis of the substrate and that is provided on the bottom wall of the processing chamber,
wherein the first inlet and the exhaust opening are spaced apart from one another, and
wherein the first supply pipe comprises a first portion disposed within the exhaust pipe and a second portion outside the exhaust pipe.
19 . The substrate processing method of claim 18 , further comprising supplying the processing fluid in the supercritical state into the processing chamber towards an upper surface of the substrate via a second supply pipe coaxial with the central axis of the substrate and that is provided in an upper wall of the processing chamber,
wherein the processing fluid supplied towards the upper surface of the substrate is supplied at a higher temperature than the processing fluid supplied towards the bottom surface of the substrate.
20 . The substrate processing apparatus of claim 1 , wherein a center of the first inlet at an end portion of the first supply pipe at the bottom wall of the processing chamber, and a center of the exhaust opening at an end portion of the exhaust pipe are aligned with a central axis of the processing chamber.