Substrate pedestal including backside gas-delivery tube
A semiconductor substrate processing apparatus includes a vacuum chamber having a processing zone in which a semiconductor substrate may be processed, a process gas source in fluid communication with the vacuum chamber for supplying a process gas into the vacuum chamber, a showerhead module through which process gas from the process gas source is supplied to the processing zone of the vacuum chamber, and a substrate pedestal module. The substrate pedestal module includes a platen made of ceramic material having an upper surface configured to support a semiconductor substrate thereon during processing, a stem made of ceramic material having an upper stem flange that supports the platen, and a backside gas tube made of ceramic material that is located in an interior of the stem. The backside gas tube includes an upper gas tube flange that is located between a lower surface of the platen and an upper surface of the upper stem flange wherein the backside gas tube is in fluid communication with at least one backside gas passage of the platen and the backside gas tube is configured to supply a backside gas to a region below a lower surface of a semiconductor substrate that is to be supported on the upper surface of the platen during processing.
1. A method of processing a substrate, the method comprising:
placing the substrate on a substrate pedestal, the substrate pedestal including a platen formed from a ceramic material having an upper surface configured to support the substrate during processing, a stem of the substrate pedestal being formed from a ceramic material and having an upper-stem flange to support the platen, a backside-gas tube is formed from a ceramic material that is located in an interior portion of the stem, the backside-gas tube including an upper gas-tube flange located between a lower surface of the platen and an upper surface of the upper-stem flange, the backside-gas tube being in fluid communication with at least one backside gas passage of the platen, the backside-gas tube being configured to supply a backside gas to a region below a lower surface of the substrate that is to be supported on an upper surface of the platen during processing;
forming a vacuum seal through the upper surface of the upper gas-tube flange to the lower surface of the platen through diffusion bonding; and
supplying a gas selected from gases including a backside heat-transfer gas and a purge gas through the backside-gas tube to a region below and in fluid communication with at least a central portion of a lower surface of the substrate supported on the upper surface of the platen during processing.
2. The method of claim 1 , wherein the substrate pedestal is located within a vacuum chamber with a showerhead located in the vacuum chamber and above the substrate pedestal, the method further comprising:
supplying a process gas through the showerhead into the vacuum chamber, the process gas to be supplied from a process gas source that is in fluid communication with the vacuum chamber; and
supplying the process gas from the showerhead into a processing zone located between the showerhead and the substrate located on the substrate pedestal.
3. The method of claim 1 , wherein the processing comprises at least one type of deposition process selected from deposition processes including chemical vapor deposition, plasma-enhanced chemical vapor deposition, atomic layer deposition, plasma-enhanced atomic layer deposition, pulsed deposition layer, and plasma-enhanced pulsed deposition layer.
4. The method of claim 1 , further comprising placing the substrate on a mesa pattern formed on the upper surface of the platen, the mesa pattern to provide gas passages between mesas of the mesa pattern and a lower surface of the substrate supported on the mesa pattern.
5. The method of claim 1 , wherein, the backside-gas tube includes at least one opening in the upper gas-tube flange such that at least one respective electrical connection can extend through the upper gas-tube flange.
6. A method of processing a substrate, the method comprising:
placing the substrate on a platen of a substrate pedestal, the substrate pedestal including a stem coupled to the platen;
injecting at least one backside gas into a backside-gas tube that is located in an interior portion of the stem, the backside-gas tube including an upper gas-tube flange, the backside-gas tube being in fluid communication with at least one backside gas passage of the platen;
forming a vacuum seal through the upper surface of the upper gas-tube flange to the lower surface of the platen through diffusion bonding; and
supplying a backside gas, the backside gas being selected from gases including a backside heat-transfer gas and a purge gas through the backside-gas tube to a region below and in fluid communication with at least a central portion of a lower surface of the substrate supported on an upper surface of the platen during processing.
7. The method of claim 6 , wherein the backside-gas tube includes at least one opening in the upper gas-tube flange such that at least one respective electrical connection can extend through the upper gas-tube flange.
8. The method of claim 6 , wherein:
the platen is formed from a ceramic material; and
the stem of the substrate pedestal is formed from a ceramic material.
9. The method of claim 6 , wherein the backside-gas tube is formed from a ceramic material.
10. The method of claim 6 , wherein the backside-gas tube includes the upper gas-tube flange that is located between a lower surface of the platen and an upper surface of the upper-stem flange.
11. The method of claim 6 , wherein the substrate pedestal is to be located within a vacuum chamber with a showerhead located in the vacuum chamber and above the substrate pedestal, the method further comprising:
supplying a process gas through the showerhead into the vacuum chamber, the process gas to be supplied from a process gas source that is in fluid communication with the vacuum chamber; and
supplying the process gas from the showerhead into a processing zone located between the showerhead and the substrate located on the substrate pedestal.
12. The method of claim 6 , further comprising placing the substrate on a mesa pattern formed on an upper surface of the platen, the mesa pattern to provide gas passages between mesas of the mesa pattern and a lower surface of the substrate supported on the mesa pattern.
13. A method of forming a substrate pedestal, the method comprising:
forming a platen having an upper surface configured to support a substrate during processing on the substrate pedestal;
forming a stem of the substrate pedestal to have an upper-stem flange to support the platen;
forming a backside-gas tube within an interior portion of the stem, the backside-gas tube including an upper gas-tube flange located between a lower surface of the platen and an upper surface of the upper-stem flange, the backside-gas tube to be in fluid communication with at least one backside gas passage of the platen, the backside-gas tube being configured to supply a backside gas to a region below and in fluid communication with at least a central portion of a lower surface of the substrate that is to be supported on the upper surface of the platen during processing; and
diffusion bonding an upper surface of the upper gas-tube flange to the lower surface of the platen so as to form a vacuum seal.
14. The method of claim 13 , further comprising forming each of the platen, the stem, and the backside-gas tube from a ceramic material.
15. The method of claim 13 , wherein the plate, the stem, and the backside-gas tube are formed from aluminum nitride.
16. The method of claim 13 , further comprising forming a mesa pattern formed on the upper surface of the platen, the mesa pattern to provide gas passages between mesas of the mesa pattern and a lower surface of the substrate to be supported on the mesa pattern.
17. The method of claim 13 , further comprising forming at least one electrical connection to extend through the upper gas-tube flange.