Structures and methods for heat dissipation of semiconductor devices
View Patent ↗A semiconductor structure is disclosed. In one example, the semiconductor structure includes: a device region having at least one semiconductor device; a dummy region in contact with the device region; and at least one thermal conductor embedded in the dummy region.
1. A semiconductor structure, comprising:
a semiconductor device embedded in a device region;
a thermal conductor embedded in the device region;
a vertical interconnect access (via) disposed in the device region and thermally coupling the thermal conductor to at least one surface of the semiconductor structure,
wherein the semiconductor device and the via share the following layers:
a first layer formed of a first material,
a second layer formed of a second material and formed on the first layer, and
a third layer formed of a third material and formed on the second layer, wherein the first material, the second material and the third material are different from each other.
2. The semiconductor structure of claim 1 , wherein the thermal conductor increases an average thermal conductivity of the device region.
3. The semiconductor structure of claim 1 , wherein the thermal conductor is formed of a thermally conductive material that thermally couples the semiconductor device to the via.
4. The semiconductor structure of claim 1 , wherein the via thermally couples the thermal conductor to at least one of the following on the at least one surface: a thermal bump, a heat sink, or a heat pipe.
5. The semiconductor structure of claim 1 , further comprising:
a substrate;
a bottom surface below the substrate; and
a top surface opposite to the bottom surface.
6. The semiconductor structure of claim 1 , wherein the thermal conductor serves as a metal layer in the via.
7. The semiconductor structure of claim 1 , wherein the semiconductor device is in contact with a dummy region.
8. The semiconductor structure of claim 1 , wherein the semiconductor device is contained within a cell phone.
9. The semiconductor structure of claim 1 , wherein:
the first material is tungsten;
the second material is copper; and
the third material is aluminum.
10. A method for forming a semiconductor structure, comprising:
forming a semiconductor device on a semiconductor substrate;
forming a thermal conductor in a dummy region on the semiconductor substrate;
forming a via in the dummy region, wherein the via thermally couples the thermal conductor to at least one surface of the semiconductor structure,
wherein the semiconductor device and the via share the following layers:
a first layer formed of tungsten,
a second layer formed of copper and formed on the first layer, and
a third layer formed of aluminum and formed on the second layer.
11. The method of claim 10 , wherein forming the thermal conductor in the dummy region increases an average thermal conductivity of the dummy region.
12. The method of claim 10 , wherein the dummy region is in contact with the semiconductor device.
13. The method of claim 10 , wherein the thermal conductor is formed of a thermally conductive material that thermally couples the semiconductor device to the via.
14. The method of claim 10 , further comprising forming at least one of the following on the at least one surface: a thermal bump, a heat sink, or a heat pipe.
15. The method of claim 10 , wherein:
the semiconductor structure has a bottom surface below the substrate and a top surface opposite to the bottom surface.
16. A method for forming a semiconductor structure, comprising:
forming a plurality of semiconductor devices in at least one device region on a semiconductor substrate;
forming a thermal conductor in a dummy region on the semiconductor substrate;
forming a plurality of vias in the dummy region on the semiconductor substrate, wherein each of the plurality of vias thermally couples the plurality of semiconductor devices and the thermal conductor to at least one surface of the semiconductor structure,
wherein the plurality of semiconductor devices and the plurality of vias share the following layers:
a first layer formed of a first material,
a second layer formed of a second material and formed on the first layer, and
a third layer formed of a third material and formed on the second layer.
17. The method of claim 16 , wherein the dummy region is in contact with the at least one device region.
18. The method of claim 16 , wherein the plurality of vias comprises a thermally conductive material that increases an average thermal conductivity of the dummy region.
19. The method of claim 16 , wherein the thermal conductor comprises at least one of the following: a thermal bump, a heat sink, or a heat pipe.
20. The method of claim 16 , wherein the third layer is an interconnect layer formed of aluminum and formed on the second layer.