IP Library › Granted Patent US 12,278,379
Granted Patent B2
US 12,278,379 · App. 18/176,309 · Granted Apr 15, 2025

Anodes for lithium-based energy storage devices

Inventors: John C. Brewer (Rochester, NY); Kevin Tanzil (Rochester, NY); Paul D. Garman (Pittsford, NY); Robert G. Anstey (Tonawanda, NY)
Assignee: Graphenix Development, Inc.
H01M4/661H01M4/0404H01M4/0428H01M4/0442H01M4/131H01M4/134H01M4/1391H01M4/1395H01M4/386H01M4/626H01M4/667H01M4/669H01M10/0525H01M2004/021H01M2004/027
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Quick Facts
Patent No.
US 12,278,379
App. No.
18/176,309
Granted
Apr 15, 2025
Kind
B2
Abstract

An anode for a lithium-based energy storage device such as a lithium-ion battery is disclosed. The anode includes an electrically conductive current collector comprising an electrically conductive layer and a transition metal oxide layer overlaying the electrically conductive layer. The anode may include a continuous porous lithium storage layer provided over the transition metal oxide layer. The continuous porous lithium storage layer may include at least 80 atomic % silicon. A method of making the anode may include providing an electrically conductive current collector having an electrically conductive layer and a transition metal oxide layer provided over the electrically conductive layer. A continuous porous lithium storage layer is deposited over the transition metal oxide layer by PECVD. The continuous porous lithium storage layer has a total content of silicon of at least 80 atomic %.

Claims (24)

1. A method of making an anode for use in an energy storage device, the method comprising:

providing an electrically conductive current collector comprising an electrically conductive layer and a transition metal oxide layer overlaying over the electrically conductive layer; and

depositing a continuous porous lithium storage layer onto the transition metal oxide layer by PECVD, wherein the continuous porous lithium storage layer has a total content of silicon of at least 80 atomic %.

2. The method of claim 1 , wherein the PECVD comprises an expanding thermal chemical vapor deposition plasma process.

3. The method of claim 1 , wherein the PECVD comprises using a microwave source or an AC source.

4. The method of claim 1 , wherein the transition metal oxide layer has an average thickness of at least 0.02 μm.

5. The method of claim 1 , wherein the transition metal oxide layer comprises an oxide of nickel, an oxide of titanium, or an oxide of copper.

6. The method of claim 1 , wherein the continuous porous lithium storage layer has an average thickness in a range of 2 μm to 15 μm.

7. The method of claim 1 , wherein the continuous porous lithium storage layer has a total content of silicon of at least 90 atomic %.

8. The method of claim 1 , wherein the continuous porous lithium storage layer further comprises 0.1 to 10 atomic % of a silicide forming metallic element.

9. The method of claim 1 , wherein the continuous porous lithium storage layer further comprises 0.2 to 5 atomic % of a silicide forming metallic element.

10. The method of claim 1 , wherein the continuous porous lithium storage layer has an average density in a range of 1.1 to 2.25 g/cm 3 .

11. The method of claim 1 , further comprising forming the transition metal oxide layer by sputtering.

12. The method of claim 1 , further comprising forming the transition metal oxide layer by evaporation.

13. The method of claim 1 , further comprising forming the transition metal oxide layer by CVD.

14. The method of claim 1 , further comprising forming the transition metal oxide layer by ALD.

15. The method of claim 1 , further comprising forming a supplemental layer over the continuous porous lithium storage layer.

16. The method of claim 15 , wherein forming the supplemental layer comprises ALD, CVD, PECVD, evaporation, or sputtering.

17. The method of claim 15 , wherein forming the supplemental layer comprises solution coating or ink jet deposition.

18. The method of claim 15 , wherein the supplemental layer comprises a solid-state electrolyte.

19. The method of claim 1 , wherein the electrically conductive layer is in the form of a metal foil or metal mesh and comprises stainless steel, nickel, copper, or titanium.

20. An anode made by the method of claim 1 , wherein:

the silicon comprises amorphous silicon, and

the continuous porous lithium storage layer has interstices embedded therein.

Assignments (1)
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Mar 1, 2023
From: BREWER, JOHN C.; TANZIL, KEVIN; GARMAN, PAUL D.; ANSTEY, ROBERT G.
To: GRAPHENIX DEVELOPMENT, INC.
Reel/Frame 062840/0270 →
Continuity (5)
Continuation 17677642 · Feb 22, 2022
Continuation 17109872 · Dec 2, 2020
Continuation 16285842 · Feb 26, 2019
Provisional Application 62635290 · Feb 26, 2018
Related Publication 20230207831A1 · Jun 29, 2023
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