Semiconductor device
View Patent ↗A semiconductor device can include: a semiconductor chip including a first and second surface, a first electrode on the first surface, an active area on the second surface, a second electrode on the second surface, and a third electrode on the second surface; a first conductive member in the active area of the semiconductor chip and electrically connected to the semiconductor chip; a second conductive member in a second area and isolated from the first conductive member, the second area an area in which, when viewed from above, with respect to a first area of the active area in which the first conductive member is not provided, circles sharing centers of shortest distances between an outer periphery of the first conductive member and an outer periphery of the active area can be drawn largest in the first area; and a lead terminal connected to the first conductive member.
1 . A semiconductor device comprising:
a semiconductor chip comprising:
a first surface,
a second surface different from the first surface, the second surface comprising an active area comprising a first area and a second area in the first area,
a first electrode provided on the first surface,
a second electrode provided on the second surface, and
a third electrode provided on the second surface;
a first conductor provided in the active area of the semiconductor chip and electrically connected to the semiconductor chip;
a second conductor provided in the second area and isolated from the first conductor, when viewed from above, the second area being an area in which the first conductor is not provided, the second area being a portion of the first area having an area for circles with larger diameters between an outer periphery of the first conductor and an outer periphery of the active area compared to circles drawn in the first area between the outer periphery of the first conductor and the outer periphery of the active area;
a lead terminal connected to the first conductor;
an insulating film provided above the second electrode and having a first opening; and
a first connector provided in the first opening and connecting the first conductor and the semiconductor chip,
wherein the insulating film further has a second opening, and
the second conductor is connected to the second electrode via a second connector in the second opening.
2 . The semiconductor device according to claim 1 , wherein the second conductor is connected to the first connector.
3 . The semiconductor device according to claim 1 , wherein the first connector has a void.
4 . A semiconductor device comprising:
a semiconductor chip comprising:
a first surface,
a second surface different from the first surface, the second surface comprising an active area comprising a first area and a second area in the first area,
a first electrode provided on the first surface,
a second electrode provided on the second surface, and
a third electrode provided on the second surface;
a first conductor provided in the active area of the semiconductor chip and electrically connected to the semiconductor chip;
a second conductor provided in the second area and isolated from the first conductor, when viewed from above, the second area being an area in which the first conductor is not provided, the second area being a portion of the first area having an area for circles with larger diameters between an outer periphery of the first conductor and an outer periphery of the active area compared to circles drawn in the first area between the outer periphery of the first conductor and the outer periphery of the active area;
a lead terminal connected to the first conductor; and
a third conductor provided in the second area in a manner of being isolated from the first conductor and the second conductor, wherein
when viewed from above, the first conductor is provided between the second conductor and the third electrode and between the third conductor and the third electrode, and
the second conductor and the third conductor are provided symmetrically with respect to a third plane passing through the third electrode and perpendicular to the first surface.
5 . The semiconductor device according to claim 4 , wherein
when viewed from above, the active area has a U-shape or a squared U-shape, and
when viewed from above, the third electrode is provided inside the U-shape or the squared U-shape of the active area.
6 . The semiconductor device according to claim 4 , wherein
when viewed from above, the first conductor has a U-shape or a squared U-shape,
the second conductor and the third conductor are provided outside the U-shape or the squared U-shape of the first conductor, and
the third electrode is provided inside the U-shape or the squared U-shape of the first conductor.