Semiconductor structure and method for forming same
Semiconductor structure and method forming the same are provided. The method includes: providing a substrate and discrete conductive structures on the substrate; forming an insulating layer on an upper surface of each of the conductive structures; forming an isolation structure on a side wall of each of the conductive structures and on a side wall of each of the insulating layers; removing part of the isolation structure located on the side wall of the insulating layer; removing part of the insulating layer that is far away from a respective one of the conductive structures, to form and surround trenches by a surface of the substrate, the side walls of the isolation structures and the side walls of the insulating layers, a width of an opening of each trench being larger than a width of a bottom of each trench in a direction perpendicular to side walls of the trenches.
1. A method for forming a semiconductor structure, comprising:
providing a substrate and a plurality of discrete conductive structures located on the substrate;
forming an insulating layer on an upper surface of each of the conductive structures;
forming an isolation structure, located on a side wall of each of the conductive structures and on a side wall of each of the insulating layers;
removing a part of the isolation structure located on the side wall of the insulating layer, wherein an upper surface of the rest of the isolation structure is higher than the upper surface of each of the conductive structures;
removing a part of the insulating layer that is far away from a respective one of the conductive structures, wherein a width of a top of the rest of the insulating layer is less than a width of a bottom of the rest of the insulating layer, in a direction perpendicular to the side wall of the insulating layer; and
after removing the part of the insulating layer that is far away from the respective one of the conductive structures, trenches are formed and surrounded by a surface of the substrate, the side walls of the isolation structures and the side walls of the insulating layers, wherein a width of an opening of each of the trenches is larger than a width of a bottom of each of the trenches in a direction perpendicular to side walls of the trenches;
wherein removing the part of the insulating layer that is far away from the respective one of the conductive structures comprises: removing two opposite sides of a top of the insulating layer, so that grooves are formed at two ends of the top of each of the insulating layers, a bottom of each of the grooves being higher than or flush with the upper surface of the rest of the isolation structure;
wherein a thickness of each of the grooves accounts for 2.5% to 25% of a thickness of each of the conductive structures, in a direction parallel to the side wall of each of the conductive structures; and
wherein the thickness of each of the grooves is 1 nanometer to 20 nanometers, in the direction parallel to the side wall of each of the conductive structures.
2. The method for forming a semiconductor structure of claim 1 , wherein the part of the isolation structure located on the side wall of the insulating layer and the part of the insulating layer that is far away from the respective one of the conductive structures are removed by isotropic etching.
3. The method for forming a semiconductor structure of claim 1 , wherein the isolation structure comprises a first isolation layer, a second isolation layer and a third isolation layer; the second isolation layer being located between the first isolation layer and the third isolation layer, the first isolation layer being close to a respective one of the trenches, and the third isolation layer is in contact with a respective one of the conductive structures;
wherein the method, after removing the part of the insulating layer that is far away from the respective one of the conductive structures, comprises removing the second isolation layer to form a gap, and forming a fill layer on a top of the gap.
4. The method for forming a semiconductor structure of claim 3 , wherein forming the fill layer comprises: forming an initial fill layer on the top of the gap and the side wall of the insulating layer, and then removing the initial fill layer located on the side wall of the insulating layer, wherein the rest of the initial fill layer serves as the fill layer.
5. The method for forming a semiconductor structure of claim 3 , wherein a material of the first isolation layer is the same as a material of the third isolation layer, and the material of the first isolation layer is different from a material of the second isolation layer.
6. The method for forming a semiconductor structure of claim 1 , comprising
forming a conductive contact layer fully filling a respective one of the trenches, wherein the conductive contact layer in one of the trenches is electrically insulated from the conductive contact layer in another one of the trenches.
7. The method for forming a semiconductor structure of claim 1 , wherein
each of the conductive structures is a bit line structure; wherein the method, after forming the isolation structure and before removing the part of the isolation structure, comprises forming a capacitor contact layer on the substrate, wherein the capacitor contact layer is located between adjacent isolation structures of the isolation structures, an upper surface of the capacitor contact layer is higher than an upper surface of the bit line structure, and the upper surface of the capacitor contact layer is lower than an upper surface of the insulating layer;
wherein the method further comprises:
forming a capacitor barrier layer on the surface of the capacitor contact layer, the surface of the isolation structure and the side wall of the insulating layer which are exposed, after removing the part of the insulating layer; and
forming a capacitor conductive layer filling a respective one of the trenches on a surface of the capacitor barrier layer, wherein the capacitor conductive layer filling one of the trenches is electrically insulated from the capacitor conductive layer filling another one of the trenches;
wherein a capacitor contact structure is formed by the capacitor contact layer, the capacitor barrier layer and the capacitor conductive layer in each of the trenches.
8. The method for forming a semiconductor structure of claim 7 , wherein
forming the capacitor contact layer comprises: forming an initial capacitor contact layer between the isolation structures, on the upper surfaces of the isolation structures and on the upper surfaces of the insulating layers; and removing the initial capacitor contact layer located on the upper surfaces of the isolation structures, the upper surfaces of the insulating layers and between parts of the isolation structures, the rest of the initial capacitor contact layer serving as the capacitor contact layer.
9. The method for forming a semiconductor structure of claim 8 , wherein
the upper surface of the capacitor contact layer is 5 nanometers to 15 nanometers higher than the upper surface of the bit line structure.
10. A semiconductor structure, comprising:
a substrate and a plurality of discrete conductive structures located on the substrate;
an insulating layer located on an upper surface of each of the conductive structures;
a width of a top of the insulating layer is less than a width of a bottom of the insulating layer in a direction perpendicular to a side wall of the insulating layer;
an isolation structure, located on a side wall of each of the conductive structures and on the side wall of the insulating layer; wherein an upper surface of each of the conductive structures is lower than an upper surface of the isolation structure; and
trenches, formed and surrounded by a surface of the substrate, the side walls of the isolation structures and the side walls of the insulating layers; a width of an opening of each of the trenches is larger than a width of a bottom of each of the trenches in a direction perpendicular to a side wall of each of the trenches;
wherein there are grooves at opposite sides of a top of the insulating layer, and a bottom of each of the grooves is higher than or flush with the upper surface of the isolation structure;
wherein a thickness of each of the grooves accounts for 2.5% to 25% of a thickness of each of the conductive structures, in a direction parallel to the side wall of each of the conductive structures; and
wherein the thickness of each of the grooves is 1 nanometer to 20 nanometers, in the direction parallel to the side wall of each of the conductive structures.
11. The semiconductor structure of claim 10 , wherein a conductive contact layer fully fills a respective one of the trenches, and the conductive contact layer in one of the trenches is electrically insulated from the conductive contact layer in another one of the trenches.
12. The semiconductor structure of claim 10 , wherein
the isolation structure comprises a fill layer, a first isolation layer, and a third isolation layer; there is a gap between the first isolation layer and the third isolation layer; the fill layer is located on a top of the gap, the first isolation layer is close to a respective one of the trenches; the third isolation layer is on a side wall of a respective one of the conductive structures.
13. The semiconductor structure of claim 11 , wherein
the conductive contact layer is a capacitor contact structure formed by a capacitor contact layer, a capacitor barrier layer and a capacitor conductive layer in each of the trenches.
14. The semiconductor structure of claim 10 , wherein
each of the conductive structures is a bit line structure comprising a bit line contact layer, a bit line barrier layer, and a bit line conductive layer which are stacked.