IP Library › Granted Patent US 12,525,944
Granted Patent B2
US 12,525,944 · App. 18/193,424 · Granted Jan 13, 2026

Acoustic wave device with wurtzite based piezoelectric layer with high acoustic velocity

Inventors: Michael David Hill (Emmitsburg, MD); Alexandre Augusto Shirakawa (Cardiff by the Sea, CA); Benjamin Paul Abbott (Irvine, CA); Stefan Bader (Fort Collins, CO); David Albert Feld (Los Altos, CA); Kwang Jae Shin (Yongin, KR)
Assignee: Skyworks Global Pte. Ltd.
H03H9/02031C01B32/907H03H9/02015H03H9/02543H03H9/02834H03H9/173H03H9/176H03H9/25H03H9/568H03H9/6483C01P2002/52C01P2006/40
View Patent ↗
Loading inventors, assignments & file history…
Monitor This Case
Get email alerts when status or documents change.
Order Certified Copies
Most orders are placed with the USPTO same day — all within 24 business hours.
Order via The Patent Place →
Pre-filled with this patent's details
Quick Facts
Patent No.
US 12,525,944
App. No.
18/193,424
Granted
Jan 13, 2026
Kind
B2
Abstract

Aspects of this disclosure relate to an acoustic wave device with a piezoelectric layer that includes a wurtzite structure. The wurtzite structure can include a group 2 element and have a high acoustic velocity. For example, the wurtzite structure can include a carbide and the group 2 element can be carbon of the carbide. The high acoustic velocity can be over 10,000 meters per second. Related piezoelectric layers, acoustic wave filters, radio frequency modules, wireless communication devices, and methods are disclosed.

Claims (31)

1 . An acoustic wave device comprising:

electrodes including a first electrode and a second electrode;

a piezoelectric layer positioned between the first electrode and the second electrode, the piezoelectric layer including a wurtzite structure that includes carbon, the piezoelectric layer having an acoustic velocity of at least 10,000 meters per second; and

an air cavity configured as an acoustic reflector, the acoustic wave device being a bulk acoustic wave device configured to generate a bulk acoustic wave, the bulk acoustic wave device having a resonant frequency of at least 6 gigahertz.

2 . The acoustic wave device of claim 1 wherein the wurtzite structure further includes aluminum nitride.

3 . The acoustic wave device of claim 1 wherein the wurtzite structure includes a carbide, and the carbon is included in the carbide.

4 . The acoustic wave device of claim 1 wherein the wurtzite structure includes silicon carbide, and the carbon is included in the silicon carbide.

5 . The acoustic wave device of claim 4 wherein the piezoelectric layer includes Al 4 SiC 4 .

6 . The acoustic wave device of claim 1 wherein the wurtzite structure includes boron.

7 . The acoustic wave device of claim 1 wherein the piezoelectric layer includes a dopant.

8 . The acoustic wave device of claim 1 wherein the acoustic velocity is no greater than 15,000 meters per second.

9 . The acoustic wave device of claim 1 wherein the resonant frequency is in a range from 6 gigahertz to 15 gigahertz.

10 . The acoustic wave device of claim 1 wherein the acoustic velocity is at least 11,000 meters per second.

11 . An acoustic wave device comprising:

a piezoelectric layer including a wurtzite structure and having an acoustic velocity of at least 10,000 meters per second, the piezoelectric layer including Al 4 SiC 4 ; and

an electrode over the piezoelectric layer, the acoustic wave device configured to generate an acoustic wave.

12 . The acoustic wave device of claim 11 wherein the acoustic velocity is no greater than 15,000 meters per second.

13 . The acoustic wave device of claim 11 wherein the acoustic wave device is a bulk acoustic wave device, and the acoustic wave is a bulk acoustic wave.

14 . The acoustic wave device of claim 13 wherein the bulk acoustic wave device has a resonant frequency in a range from 6 gigahertz to 15 gigahertz.

15 . An acoustic wave filter comprising:

a bulk acoustic wave resonator including a piezoelectric layer including a wurtzite structure that includes carbon, the piezoelectric layer having an acoustic velocity of at least 10,000 meters per second, the bulk acoustic wave resonator having a resonant frequency of at least 6 gigahertz; and

a plurality of additional acoustic wave resonators, the acoustic wave filter configured to filter a radio frequency signal.

16 . The acoustic wave filter of claim 15 wherein the wurtzite structure includes aluminum nitride.

17 . The acoustic wave filter of claim 15 wherein the wurtzite structure includes silicon carbide, and the carbon is included in the silicon carbide.

18 . The acoustic wave filter of claim 15 wherein the resonant frequency is in a range from 6 gigahertz to 15 gigahertz.

19 . The acoustic wave filter of claim 15 wherein the acoustic velocity is no greater than 15,000 meters per second.

20 . A wireless communication device comprising:

the acoustic wave filter of claim 15 ;

an antenna operatively coupled to the acoustic wave filter;

a radio frequency amplifier operatively coupled to the acoustic wave filter and configured to amplify a radio frequency signal; and

a transceiver in communication with the radio frequency amplifier.

Assignments (1)
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Mar 14, 2024
From: HILL, MICHAEL DAVID; SHIRAKAWA, ALEXANDRE AUGUSTO; ABBOTT, BENJAMIN PAUL; BADER, STEFAN; FELD, DAVID ALBERT; SHIN, KWANG JAE
To: SKYWORKS GLOBAL PTE. LTD.
Reel/Frame 066776/0187 →
Continuity (3)
Provisional Application 63362264 · Mar 31, 2022
Provisional Application 63362257 · Mar 31, 2022
Related Publication 20230327635A1 · Oct 12, 2023
References Cited (36)
US 20050093648A1 · Inoue · 2005 [cited by examiner]
US 20090123259A1 · Barclay et al. · 2009 [cited by applicant]
US 20110115571A1 · Nakamura · 2011 [cited by examiner]
US 20150326200A1 · Grannen · 2015 [cited by examiner]
US 20200099359A1 · Shin et al. · 2020 [cited by applicant]
US 20200177157A1 · Nakagawa et al. · 2020 [cited by applicant]
US 20200358464A1 · Abbott · 2020 [cited by examiner]
US 20210159874A1 · Yang · 2021 [cited by examiner]
US 20210203402A1 · Shealy · 2021 [cited by examiner]
US 20210265971A1 · Knapp · 2021 [cited by examiner]
US 20210296566A1 · Koutsaroff · 2021 [cited by examiner]
US 20220037580A1 · Nakamura · 2022 [cited by examiner]
US 20220060166A1 · Yantchev · 2022 [cited by applicant]
US 20220182034A1 · Moe · 2022 [cited by examiner]
US 20230353119A1 · Hill et al. · 2023 [cited by applicant]
US 20240136998A1 · Burak · 2024 [cited by examiner]
Jenkins et al., “Growth of solid solutions of aluminum nitride and silicon carbide by metalorganic chemical vapor deposition”, Journal of Crystal Growth, 1993, 128: 375-378. [cited by applicant]
Liljeholm et al., “Synthesis and characterization of (0001)-textured wurtzite Al [cited by applicant]
Song et al., “Surface acoustic wave device properties of (B, Al)N films on 128° Y-X LiNbOs substrate”, Applied Surface Science, 2010, 256: 7156-7159. [cited by applicant]
Tasnadi et al., “Significant configurational dependence of the electromechanical coupling constant of Bo. [cited by applicant]
Witthaut et al., “Characterization of ternary Al—B—N films”, Thin Solid Films, 2000, 377-378, pp. 478-483. [cited by applicant]
U.S. Appl. No. 18/193,317, filed Mar. 30, 2023, Acoustic Wave Device With Wurtzite Based Piezoelectric Layer. [cited by applicant]
Boguslawski, “Doping properties of C, Si, and Ge impurities in GaN and AlN”, Physical Review B, vol. 56(15):9496-9505 (1997). [cited by applicant]
Burton et al., “First principles phase diagram calculations for the wurtzite-structure quasibinary systems SiC—AiN, SiC—GaN and SiC—InN”, Journal of Applied Physics, vol. 110:023507-1-023507-8 (2011). [cited by applicant]
Davis et al., Annual Report, “Low-temperature deposition and characterization of N- and P-Type silicon carbide thin films and associated ohmic and schottky contacts”, Office of the Chief Naval Research, Report for the p… [cited by applicant]
Davis et al., “Final Technical Report: Pseudomorphic semiconducting heterostructures from combinations of AlN, GaN and selected SiC polytypes: Theoretical advancement and its coordination with experimental studies of nu… [cited by applicant]
Gu et al., “Aluminum nitride-silicon carbide alloy crystals grown on SiC substrates by sublimation”, MRS Internet J. Nitride Semicond. Res. vol. 10(5):1-8 (2005). [cited by applicant]
Jenkins et al., “Growth of solid solutions of aluminum nitride and silicon carbide by metalorganic chemical vapor deposition”, Materials Science Research Center of Excellence, Department of Electrical Engineering, Schoo… [cited by applicant]
Kern et al., “Solid solutions of AlN and SiC grown by plasma-assisted, gas-source molecular beam epitaxy,” J. Matter Res., vol. 7, No. 7, Jul. 1993. [cited by applicant]
Luo et al., “First-principles study of wurtzite BC [cited by applicant]
Pedesseau et al., “Al [cited by applicant]
Rais-Zadeh et al., “Gallium nitride as an electromechanical material”, Journal of Microelectromechanical Systems, vol. 23(6):1252-1271 (2014). [cited by applicant]
Ramazanov et al., “Structural properties of the epitaxial (SiC) [cited by applicant]
Rowland et al., “Epitaxial Growth of AlN by Plasma-Assisted Gas-Source Molecular Beam Epitaxy,” Nov. 1992. [cited by applicant]
Xie et al., “Growth and electrical characterization of Al—N co-doping SiC single crystals”, IEEE, in 4 pages (2017). [cited by applicant]
Zangvil et al., “Phase relationships in the silicon carbide-aluminum nitride system”, J. Am. Ceram. Soc., vol. 71(10):884-890 (1988). [cited by applicant]