Stacked die assembly
A sensor device comprising: a lead frame; a first/second semiconductor die having a first/second sensor structure at a first/second sensor location, and a plurality of first/second bond pads electrically connected to the lead frame; the semiconductor dies having a square or rectangular shape with a geometric center; the sensor locations are offset from the geometrical centers; the second die is stacked on top of the first die, and is rotated by a non-zero angle and optionally also offset or shifted with respect to the first die, such that a perpendicular projection of the first and second sensor location coincide.
1. A magnetic sensor device comprising:
a lead frame;
a first semiconductor die implemented in a first CMOS technology node, the first semiconductor die comprising a first magnetic sensor structure and a plurality of first bond pads wire-bonded to the lead frame;
a second semiconductor die implemented in a second CMOS technology node different from the first CMOS technology node, the second semiconductor die comprising a second magnetic sensor structure and a plurality of second bond pads wire-bonded to the lead frame.
2. The magnetic sensor device according to claim 1 , wherein the first semiconductor die and the second semiconductor die are galvanically separated.
3. The magnetic sensor device according to claim 1 , wherein the first semiconductor die is connected to first pins for ground and power supply and the second semiconductor die is connected to second pins for ground and power supply, the first pins being different than the second pins.
4. The magnetic sensor device according to claim 1 ,
wherein the first semiconductor die is configured for providing a first linear or an angular position based on magnetic field components based on signals obtained from the first magnetic sensor structure, and the second semiconductor die is configured for providing a second linear or an angular position based on magnetic field gradients based on signals obtained from the second magnetic sensor structure; or
wherein the first semiconductor die is configured for providing a first linear or an angular position based on magnetic field gradients based on signals obtained from the first magnetic sensor structure, and the second semiconductor die is configured for providing a second linear or an angular position based on magnetic field gradients based on signals obtained from the second magnetic sensor structure.
5. The magnetic sensor device according to claim 1 ,
wherein the first magnetic sensor structure comprises horizontal Hall elements, and
wherein the second magnetic sensor structure comprises vertical Hall elements.
6. The magnetic sensor device according to claim 1 ,
wherein the first magnetic sensor structure comprises an integrated magnetic concentrator;
and wherein the second magnetic sensor structure does not comprise an integrated magnetic concentrator.
7. The magnetic sensor device according to claim 1 , wherein the first magnetic sensor structure and the second magnetic sensor structure are not identical.
8. The magnetic sensor device according to claim 1 , wherein the first semiconductor die is configured for providing an actual measurement, and the second semiconductor die is configured for providing a redundant measurement.
9. The magnetic sensor device according to claim 1 , wherein the first magnetic sensor structure and the second magnetic structure comprise one or more sensor elements selected from the group consisting of: horizontal Hall elements, vertical hall elements, and magneto-resistive elements.
10. A sensor system comprising:
a magnetic sensor device according to claim 1 ; and
a magnetic source arranged in a vicinity of the magnetic sensor device.
11. A magnetic sensor device comprising:
a lead frame;
a first semiconductor die comprising a first magnetic sensor structure and a plurality of first bond pads wire-bonded to the lead frame;
a second semiconductor die comprising a second magnetic sensor structure and a plurality of second bond pads wire-bonded to the lead frame;
wherein the first magnetic sensor structure comprises an integrated magnetic concentrator; and
wherein the second magnetic sensor structure does not comprise an integrated magnetic concentrator.
12. The magnetic sensor device according to claim 11 , wherein the first semiconductor die and the second semiconductor die are galvanically separated.
13. The magnetic sensor device according to claim 11 , wherein the first semiconductor die is connected to first pins for ground and power supply and the second semiconductor die is connected to second pins for ground and power supply, the first pins being different than the second pins.
14. The magnetic sensor device according to claim 11 , wherein the first magnetic sensor structure includes a first type of magnetic sensitive elements and the second magnetic sensor structure includes a second type of magnetic sensitive elements different from the first type of magnetic sensitive elements.
15. The magnetic sensor device according to claim 11 , wherein the first magnetic sensor structure has a first physical arrangement of magnetic sensitive elements and the second magnetic sensor structure has a second physical arrangement of magnetic sensitive elements different than the first physical arrangement.
16. A sensor system comprising:
a magnetic sensor device according to claim 11 ; and
a magnetic source arranged in a vicinity of the magnetic sensor device.