Measurements of semiconductor structures based on spectral differences at different process steps
Methods and systems for measuring values of one or more parameters of interest, including changes in values of one or more parameters of interest, based on measured spectral differences are presented herein. A trained spectral difference based measurement model determines changes in the values of one or more parameters of interest based on a measure of differences in spectra measured before and after one or more process steps. In some examples, a measure of spectral difference is determined based on a difference in measured intensity, a difference in harmonic signal values, or a difference in value of one or more Mueller Matrix elements. A measure of spectral difference may be expressed as a set of difference values, a scalar value, or coefficients of a functional fit to difference values. A measure of spectral difference may be determined based on a weighting of spectral differences according to wavelength.
1 . A metrology system comprising:
a spectroscopic measurement subsystem comprising:
an illuminator configured to provide an amount of illumination light to one or more metrology targets disposed on a wafer at each of a plurality of different measurement instances in a semiconductor fabrication process flow, wherein each of the different measurement instances are separated by at least one semiconductor process step of the semiconductor fabrication process flow; and
a detector configured to detect an amount of light from the one or more metrology targets in response to the amount of illumination light and generate spectral measurement signals in response to the amount of detected light at each of the plurality of different measurement instances in the semiconductor fabrication process flow; and
a computing system configured to:
receive the spectral measurement signals associated with each of the plurality of different measurement instances;
determine a value of a measure indicative of a spectral difference between spectral measurement signals associated with two different measurement instances of the plurality of different measurement instances; and
estimate a value of a structural parameter of interest characterizing the one or more metrology targets based on a trained spectral difference based measurement model that functionally relates the value of the measure indicative of the spectral difference to the value of the structural parameter of interest.
2 . The metrology system of claim 1 , wherein the measure indicative of the spectral difference is a difference in measured intensity at each of a discrete set of measured wavelengths.
3 . The metrology system of claim 1 , wherein the measure indicative of the spectral difference is a difference in measured harmonic signal values at each of a discrete set of measured wavelengths.
4 . The metrology system of claim 1 , wherein the measure indicative of the spectral difference is a difference in measured values of one or more Mueller Matrix elements at each of a discrete set of measured wavelengths.
5 . The metrology system of claim 1 , wherein the measure indicative of the spectral difference is a scalar value indicative of a difference in measured values of the spectral measurement signals at each of a discrete set of measured wavelengths.
6 . The metrology system of claim 5 , wherein the scalar value is a Root Mean Squared Error (RMSE) measure of the difference in measured values of the spectral measurement signals at each of the discrete set of measured wavelengths.
7 . The metrology system of claim 1 , wherein the measure indicative of the spectral difference is a set of coefficients characterizing a mathematical function fit to the spectral difference at each of a discrete set of wavelengths.
8 . The metrology system of claim 1 , wherein the measure indicative of spectral difference is determined based on a weighting of the spectral difference between spectral measurement signals according to wavelength across a set of discrete wavelengths.
9 . The metrology system of claim 1 , wherein the two different measurement instances of the plurality of different measurement instances are adjacent measurement instances in the semiconductor fabrication process flow.
10 . The metrology system of claim 1 , the computing system further configured to:
train the spectral difference based measurement model with simulated measurement data, actual measurement data associated with a Design of Experiments (DOE) wafer, or a combination thereof.
11 . The metrology system of claim 1 , wherein the illuminator and detector comprise any of a spectroscopic ellipsometer, a spectroscopic reflectometer, a spectroscopic scatterometer, a beam profile reflectometer, and a beam profile ellipsometer.
12 . A method comprising:
providing an amount of illumination light to one or more metrology targets disposed on a wafer at each of a plurality of different measurement instances in a semiconductor fabrication process flow, wherein each of the different measurement instances are separated by at least one semiconductor process step of the semiconductor fabrication process flow;
detecting an amount of light from the one or more metrology targets in response to the amount of illumination light;
generating spectral measurement signals in response to the amount of detected light at each of the plurality of different measurement instances in the semiconductor fabrication process flow;
determining a value of a measure indicative of a spectral difference between spectral measurement signals associated with two different measurement instances of the plurality of different measurement instances; and
estimating a value of a structural parameter of interest characterizing the one or more metrology targets based on a trained spectral difference based measurement model that functionally relates the value of the measure indicative of the spectral difference to the value of the structural parameter of interest.
13 . The method of claim 12 , wherein the measure indicative of the spectral difference is a difference in measured intensity at each of a discrete set of measured wavelengths, a difference in measured harmonic signal values at each of a discrete set of measured wavelengths, or a difference in measured values of one or more Mueller Matrix elements at each of a discrete set of measured wavelengths.
14 . The method of claim 12 , wherein the measure indicative of the spectral difference is a scalar value indicative of a difference in measured values of the spectral measurement signals at each of a discrete set of measured wavelengths.
15 . The method of claim 12 , wherein the measure indicative of the spectral difference is a set of coefficients characterizing a mathematical function fit to the spectral difference at each of a discrete set of wavelengths.
16 . The method of claim 12 , wherein the measure indicative of spectral difference is determined based on a weighting of the spectral difference between spectral measurement signals according to wavelength across a set of discrete wavelengths.
17 . The method of claim 12 , wherein the two different measurement instances of the plurality of different measurement instances are adjacent measurement instances in the semiconductor fabrication process flow.
18 . The method of claim 12 , further comprising:
training the spectral difference based measurement model with simulated measurement data, actual measurement data associated with a Design of Experiments (DOE) wafer, or a combination thereof.
19 . A metrology system comprising:
a spectroscopic measurement subsystem comprising:
an illuminator configured to provide an amount of illumination light to one or more metrology targets disposed on a wafer at each of a plurality of different measurement instances in a semiconductor fabrication process flow, wherein each of the different measurement instances are separated by at least one semiconductor process step of the semiconductor fabrication process flow; and
a detector configured to detect an amount of light from the one or more metrology targets in response to the amount of illumination light and generate spectral measurement signals in response to the amount of detected light at each of the plurality of different measurement instances in the semiconductor fabrication process flow; and
a non-transient, computer-readable medium storing instructions that, when executed by one or more processors, causes the one or more processors to:
receive the spectral measurement signals associated with each of the plurality of different measurement instances;
determine a value of a measure indicative of a spectral difference between spectral measurement signals associated with two different measurement instances of the plurality of different measurement instances; and
estimate a value of a structural parameter of interest characterizing the one or more metrology targets based on a trained spectral difference based measurement model that functionally relates the value of the measure indicative of the spectral difference to the value of the structural parameter of interest.
20 . The metrology system of claim 19 , wherein the two different measurement instances of the plurality of different measurement instances are adjacent measurement instances in the semiconductor fabrication process flow.