Method for programming a memory device to reduce retention error
In certain aspects, a memory device includes a plurality of memory cells and a control circuit coupled to the plurality of memory cells. The plurality of memory cells includes a first set of memory cells configured to be programmed into a first set of programming states each of which is not lower than a first predetermined programming state. The control circuit is configured to perform a first program pass on the first set of memory cells. The control circuit is configured to continue to program at least a first memory cell from the first set of memory cells with one or more first programming voltages. A threshold voltage of the first memory cell is greater than a first verification voltage that corresponds to a first programming state of the first memory cell. The control circuit is configured to perform a second program pass on the first set of memory cells.
1 . A memory device, comprising:
a plurality of memory cells, comprising:
a first set of memory cells configured to be programmed into a first set of programming states each of which is not lower than a first predetermined programming state; and
a control circuit coupled to the plurality of memory cells and configured to:
perform a first program pass to program the first set of memory cells;
continue to program at least a first memory cell from the first set of memory cells with one or more first programming voltages, wherein a threshold voltage of the first memory cell is greater than a first verification voltage that corresponds to a first programming state of the first memory cell; and
perform a second program pass to program the first set of memory cells after the first memory cell is continued to be programmed with the one or more first programming voltages.
2 . The memory device of claim 1 , wherein to continue to program at least the first memory cell with the one or more first programming voltages, the control circuit is configured to:
apply the one or more first programming voltages to further program the first memory cell in the first program pass.
3 . The memory device of claim 2 , wherein:
the threshold voltage of the first memory cell is smaller than the first verification voltage in a previous program loop of the first program pass, and becomes greater than the first verification voltage in a current program loop of the first program pass; and
to apply the one or more first programming voltages to further program the first memory cell in the first program pass, the control circuit is configured to apply one or more program pulses in one or more following program loops after the current program loop to further program the first memory cell in the one or more following program loops, respectively.
4 . The memory device of claim 1 , wherein to continue to program at least the first memory cell from the first set of memory cells with the one or more first programming voltages, the control circuit is configured to:
reprogram at least the first memory cell in an intermediate program pass between the first program pass and the second program pass performed on the first set of memory cells.
5 . The memory device of claim 4 , wherein the control circuit is further configured to reprogram at least the first memory cell in the intermediate program pass in response to receiving a reprogramming instruction from a memory controller.
6 . The memory device of claim 1 , wherein:
the first set of memory cells is coupled to a word line WL(n), wherein n is a positive integer;
the plurality of memory cells further comprise a second set of memory cells coupled to a word line WL(n+1), a third set of memory cells coupled to a word line WL(n+2), and a fourth set of memory cells coupled to a word line WL(n−1); and
the control circuit is further configured to:
perform the first program pass on the first set of memory cells coupled to the word line WL(n);
perform the second program pass on the fourth set of memory cells coupled to the word line WL(n−1);
perform the first program pass on the second set of memory cells coupled to the word line WL(n+1);
perform the second program pass on the first set of memory cells coupled to the word line WL(n);
perform the first program pass on the third set of memory cells coupled to the word line WL(n+2); and
perform the second program pass on the second set of memory cells coupled to the word line WL(n+1).
7 . The memory device of claim 6 , wherein:
the second set of memory cells is configured to be programmed into a second set of programming states each of which is not lower than the first predetermined programming state;
the third set of memory cells is configured to be programmed into a third set of programming states each of which is not lower than the first predetermined programming state; and
the control circuit is further configured to:
continue to program at least the first memory cell from the first set of memory cells with the one or more first programming voltages in the first program pass performed on the first set of memory cells coupled to the word line WL(n);
continue to program at least a second memory cell from the second set of memory cells with one or more second programming voltages in the first program pass performed on the second set of memory cells coupled to the word line WL(n+1); and
continue to program at least a third memory cell from the third set of memory cells with one or more third programming voltages in the first program pass performed on the third set of memory cells coupled to the word line WL(n+2).
8 . The memory device of claim 6 , wherein:
the second set of memory cells is configured to be programmed into a second set of programming states each of which is not lower than the first predetermined programming state;
the third set of memory cells is configured to be programmed into a third set of programming states each of which is not lower than the first predetermined programming state; and
the control circuit is further configured to:
reprogram at least the first memory cell in an intermediate program pass between the first program pass and the second program pass performed on the first set of memory cells coupled to the word line WL(n);
reprogram at least a second memory cell from the second set of memory cells in an intermediate program pass between the first program pass and the second program pass performed on the second set of memory cells coupled to the word line WL(n+1); and
reprogram at least a third memory cell from the third set of memory cells in an intermediate program pass between the first program pass and the second program pass performed on the third set of memory cells coupled to the word line WL(n+2).
9 . The memory device of claim 1 , wherein responsive to programming at least the first memory cell from the first set of memory cells with the one or more first programming voltages, a first width of a first threshold voltage distribution of the first memory cell corresponding to the first programming state is different from a second width of a second threshold voltage distribution of a second memory cell corresponding to a second programming state, wherein the second programming state is lower than the first predetermined programming state.
10 . The memory device of claim 1 , wherein to continue to program at least the first memory cell with the one or more first programming voltages, the control circuit is configured to:
determine that a predetermined number of program loops have been performed when the threshold voltage of the first memory cell becomes greater than the first verification voltage, wherein a value for the predetermined number of program loops is determined based on the first predetermined programming state; and
select the first memory cell from the first set of memory cells to continue to program the first memory cell with the one or more first programming voltages.
11 . The memory device of claim 1 , wherein to continue to program the at least one first memory cell with the one or more first programming voltages, the control circuit is configured to:
determine that a programming of a second predetermined programming state has been finished when the threshold voltage of the at least one first memory cell becomes greater than the first verification voltage, wherein the second predetermined programming state is determined based on the first predetermined programming state; and
select the first memory cell from the first set of memory cells to continue to program the first memory cell with the one or more first programming voltages.
12 . The memory device of claim 1 , wherein the plurality of memory cells are quad-level cells (QLCs), and the first and second program passes comprise a coarse program pass and a fine program pass, respectively.
13 . A system, comprising:
a memory controller configured to generate and send a reprogramming instruction to a memory device;
the memory device coupled to the memory controller and configured to store data, comprising:
a plurality of memory cells, comprising a first set of memory cells configured to be programmed into a first set of programming states each of which is not lower than a first predetermined programming state; and
a control circuit coupled to the plurality of memory cells and configured to:
perform a first program pass to program the first set of memory cells;
in response to receiving the reprogramming instruction, reprogram at least a first memory cell from the first set of memory cells; and
perform a second program pass to program the first set of memory cells after the first memory cell is reprogrammed.
14 . The system of claim 13 , wherein the memory controller is configured to generate and send the reprogramming instruction to the memory device prior to the second program pass performed on the first set of memory cells.
15 . The system of claim 14 , wherein to reprogram at least the first memory cell from the first set of memory cells, the control circuit is configured to:
reprogram at least the first memory cell in an intermediate program pass prior to the second program pass performed on the first set of memory cells.
16 . The system of claim 14 , wherein:
the first set of memory cells is coupled to a word line WL(n), wherein n is a positive integer;
the plurality of memory cells further comprise a second set of memory cells coupled to a word line WL(n+1), a third set of memory cells coupled to a word line WL(n+2), and a fourth set of memory cells coupled to a word line WL(n−1); and
the control circuit is further configured to:
perform the first program pass on the first set of memory cells coupled to the word line WL(n);
perform the second program pass on the fourth set of memory cells coupled to the word line WL(n−1);
perform the first program pass on the second set of memory cells coupled to the word line WL(n+1);
perform the second program pass on the first set of memory cells coupled to the word line WL(n);
perform the first program pass on the third set of memory cells coupled to the word line WL(n+2); and
perform the second program pass on the second set of memory cells coupled to the word line WL(n+1).
17 . The system of claim 16 , wherein the memory controller is configured to generate and send the reprogramming instruction to the memory device in response to one of the following: a completion of the first program pass performed on the first set of memory cells coupled to the word line WL(n), a completion of the second program pass performed on the fourth set of memory cells coupled to the word line WL(n−1), or a completion of the first program pass performed on the second set of memory cells coupled to the word line WL(n+1).
18 . A method for operating a memory device comprising a plurality of memory cells, the plurality of memory cells comprising a first set of memory cells configured to be programmed into a first set of programming states each of which is not lower than a first predetermined programming state, the method comprising:
performing a first program pass to program the first set of memory cells;
continuing to program at least a first memory cell from the first set of memory cells with one or more first programming voltages, wherein a threshold voltage of the first memory cell is greater than a first verification voltage that corresponds to a first programming state of the first memory cell; and
performing a second program pass to program the first set of memory cells after the first memory cell is continued to be programmed with the one or more first programming voltages.
19 . A method for operating a system comprising a memory controller and a memory device, comprising:
generating, by the memory controller, a reprogramming instruction;
sending, by the memory controller, the reprogramming instruction to the memory device, wherein the memory device comprises a first set of memory cells configured to be programmed into a first set of programming states each of which is not lower than a first predetermined programming state;
performing, by the memory device, a first program pass to program the first set of memory cells;
in response to receiving the reprogramming instruction, reprogramming, by the memory device, at least a first memory cell from the first set of memory cells; and
performing, by the memory device, a second program pass to program the first set of memory cells after the first memory cell is reprogrammed.
20 . A memory device, comprising:
a plurality of memory cells, comprising:
a first set of memory cells configured to be programmed into a first set of programming states each of which is not lower than a first predetermined programming state; and
a second set of memory cells configured to be programmed into a second set of programming states each of which is lower than the first predetermined programming state; and
a control circuit coupled to the plurality of memory cells and configured to:
perform a first program pass to program the first set of memory cells and the second set of memory cells;
continue to program at least a first memory cell from the first set of memory cells with one or more first programming voltages, wherein a first width of a first threshold voltage distribution of the first memory cell is different from a second width of a second threshold voltage distribution of a second memory cell from the second set of memory cells; and
perform a second program pass to program the first set of memory cells and the second set of memory cells after the first memory cell is continued to be programmed with the one or more first programming voltages.
21 . The memory device of claim 20 , wherein the first width of the first threshold voltage distribution of the first memory cell is narrower than the second width of the second threshold voltage distribution of the second memory cell from the second set of memory cells.