3D semiconductor device and structure with bonding
A 3D semiconductor device, the device including: a first level including a first single crystal layer, the first level including first transistors, where each of the first transistors includes a single crystal channel; first metal layers interconnecting at least the first transistors; a second metal layer overlaying the first metal layers; and a second level including a second single crystal layer, the second level including second transistors, where the second level overlays the first level, where at least one of the second transistors includes a transistor channel, where the at least one of the second transistors transistor channel includes non-silicon atoms, where the second level is directly bonded to the first level, and where the bonded includes direct oxide-to-oxide bonds.
1. A 3D semiconductor device, the device comprising:
a first level comprising a first single crystal layer, said first level comprising first transistors,
wherein each of said first transistors comprises a single crystal channel;
first metal layers interconnecting at least said first transistors;
a second metal layer overlaying said first metal layers; and
a second level comprising a second single crystal layer, said second level comprising second transistors,
wherein said second level overlays said first level,
wherein at least one of said second transistors comprises a transistor channel,
wherein said at least one of said second transistors transistor channel comprises non-silicon atoms,
wherein said second level is directly bonded to said first level, and
wherein said bonded comprises direct oxide-to-oxide bonds.
2. The device according to claim 1 ,
wherein said first level comprises ground power lines (Vss) and voltage power lines (Vdd), and
wherein power delivery control comprises controlling connection to said ground power lines (Vss) or to said voltage power lines (Vdd).
3. The device according to claim 1 ,
wherein said second level comprises a plurality of DRAM memory cells, each of said plurality of DRAM memory cells comprises at least one of said second transistors.
4. The device according to claim 1 ,
wherein said second level comprises a plurality of NAND memory cells, each of said plurality of NAND memory cells comprises at least one of said second transistors.
5. The device according to claim 1 ,
wherein said second transistors are aligned to said first transistors with a less than 400 nm alignment error.
6. The device according to claim 1 ,
wherein said bonded comprises direct metal-to-metal bonds that are disposed on a same level as the direct oxide to oxide bonds.
7. The device according to claim 1 ,
wherein said second single crystal layer thickness is less than 2 microns and greater than 5 nm.
8. A 3D semiconductor device, the device comprising:
a first level comprising a first single crystal layer, said first level comprising first transistors,
wherein each of said first transistors comprises a single crystal channel;
first metal layers interconnecting at least said first transistors;
a second metal layer overlaying said first metal layers; and
a second level comprising a second single crystal layer, said second level comprising second transistors,
wherein said second level overlays said first level,
wherein said device was singulated using laser dicing equipment,
wherein said second level is directly bonded to said first level, and
wherein said bonded comprises direct oxide-to-oxide bonds.
9. The device according to claim 8 ,
wherein said first level comprises a first power line charged to a first voltage,
wherein said second level comprises a second power line charged to a second voltage, and
wherein said second voltage is greater than said first voltage by at least 50%.
10. The device according to claim 8 ,
wherein said second level comprises a plurality of DRAM memory cells, each of said plurality of DRAM memory cells comprises at least one of said second transistors.
11. The device according to claim 8 ,
wherein said second level comprises a plurality of NAND memory cells, each of said plurality of NAND memory cells comprises at least one of said second transistors.
12. The device according to claim 8 ,
wherein said second transistors are aligned to said first transistors with a less than 400 nm alignment error.
13. The device according to claim 8 ,
wherein said bonded comprises direct metal-to-metal bonds that are disposed on a same level as the direct oxide-to-oxide bonds.
14. The device according to claim 8 ,
wherein at least one of said first transistors controls the power delivery for at least one of said second transistors.
15. A 3D semiconductor device, the device comprising:
a first level comprising a first single crystal layer;
first transistors,
wherein each of said first transistors comprises a single crystal channel;
first metal layers overlaying said first level;
a second metal layer overlaying said first metal layers; and
a second level comprising a second single crystal layer, said second level comprising second transistors,
wherein said second level overlays said first level;
wherein said second transistors are aligned to said first transistors with a less than 400 nm alignment error,
wherein said second level is directly bonded to said first level, and
wherein said bonded comprises direct oxide-to-oxide bonds.
16. The device according to claim 15 ,
wherein said first level comprises first transistors.
17. The device according to claim 15 ,
wherein said second level comprises a plurality of DRAM memory cells, each of said plurality of DRAM memory cells comprises at least one of said second transistors.
18. The device according to claim 15 ,
wherein said second level comprises a plurality of NAND memory cells, each of said plurality of NAND memory cells comprises at least one of said second transistors.
19. The device according to claim 15 ,
wherein at least one of said first transistors controls the power delivery for at least one of said second transistors.
20. The device according to claim 15 , further comprising:
a via disposed through said second level, and
wherein said via comprises a radius of less than 450 nm.