Through-circuit Vias in interconnect structures
An integrated circuit (IC) with through-circuit vias (TCVs) and methods of forming the same are disclosed. The IC includes a semiconductor device, first and second interconnect structures disposed on first and second surfaces of the semiconductor device, respectively, first and second inter-layer dielectric (ILD) layers disposed on front and back surfaces of the substrate, respectively, and a TCV disposed within the first and second interconnect structures, the first and second ILD layers, and the substrate. The TCV is spaced apart from the semiconductor device by a portion of the substrate and portions of the first and second ILD layers. A first end of the TCV, disposed over the front surface of the substrate, is connected to a conductive line of the first interconnect structure and a second end of the TCV, disposed over the back surface of the substrate, is connected to a conductive line of the second interconnect structure.
1. A method, comprising:
forming a semiconductor device on a front surface of a substrate;
forming a first interconnect structure on the front surface of the substrate;
performing a thin down process on a back surface of the substrate;
forming a first portion of a second interconnect structure on a back surface of the thinned down substrate;
forming a through-via opening extending through the first portion of the second interconnect structure, the substrate, and the first interconnect structure;
depositing a conductive liner along sidewalls of the through-via opening;
depositing a conductive plug on the conductive liner; and
forming a second portion of the second interconnect structure on the conductive plug.
2. The method of claim 1 , further comprising forming a polymer plug in the through-via opening prior to forming the conductive liner.
3. The method of claim 2 , further comprising forming a conductive line opening in the first portion of the second interconnect structure and on the polymer plug.
4. The method of claim 1 , further comprising:
depositing a polymer layer in the through-via opening prior to depositing the conductive liner; and
performing a curing process on the polymer layer.
5. The method of claim 1 , further comprising:
depositing a polymer layer in the through-via opening prior to depositing the conductive liner; and
etching a top portion of the polymer layer to expose sidewalls of a dielectric layer surrounding the polymer layer.
6. The method of claim 1 , further comprising depositing an organic material layer in the through-via opening prior to depositing the conductive liner.
7. The method of claim 1 , further comprising etching a dielectric layer surrounding the through-via opening to form a metal line opening on the through-via opening.
8. The method of claim 1 , further comprising forming a polymer-filled dual damascene structure in a dielectric layer of the first portion of a second interconnect structure prior to forming the through-via opening.
9. The method of claim 8 , further comprising replacing the polymer-filled dual damascene structure with a metal-filled dual damascene structure prior to forming the second portion of the second interconnect structure.
10. A method, comprising:
forming a semiconductor device on a first surface of a substrate comprising a non-insulating material;
forming a first interconnect structure on the first surface of the substrate;
forming a second interconnect structure on a second surface of the substrate;
forming a dual damascene conductive structure extending through the second interconnect structure, the substrate, and the first interconnect structure; and
forming a third interconnect structure on the dual damascene conductive structure.
11. The method of claim 10 , wherein forming the dual damascene conductive structure comprises:
forming a conductive through-via extending through the second interconnect structure, the substrate, and the first interconnect structure; and
forming a conductive line on the conductive through-via and in the second interconnect structure.
12. The method of claim 10 , wherein forming the dual damascene conductive structure comprises forming a through-via opening extending through the second interconnect structure, the substrate, and the first interconnect structure.
13. The method of claim 10 , wherein forming the dual damascene conductive structure comprises forming a polymer-filled through-via extending through the second interconnect structure, the substrate, and the first interconnect structure.
14. The method of claim 10 , wherein forming the dual damascene conductive structure comprises:
forming a polymer-filled through-via extending through the second interconnect structure, the substrate, and the first interconnect structure; and
replacing the polymer-filled through-via with a metal-filled through-via.
15. The method of claim 10 , wherein forming the dual damascene conductive structure comprises:
forming a polymer-filled through-via extending through the second interconnect structure, the substrate, and the first interconnect structure; and
forming a metal line opening on the polymer-filled through-via.
16. A method, comprising:
forming a semiconductor device on a first surface of a substrate comprising a non-insulating material;
forming a first interconnect structure on the first surface of the substrate;
forming a first dual damascene conductive structure extending through the first interconnect structure and the substrate;
forming a second interconnect structure on a second surface of the substrate; and
forming a second dual damascene conductive structure extending through the second interconnect structure and on the first dual damascene conductive structure.
17. The method of claim 16 , wherein forming the second dual damascene conductive structure comprises etching a dielectric layer of the second interconnect structure to expose a surface of the first dual damascene conductive structure.
18. The method of claim 16 , wherein forming the second dual damascene conductive structure comprises depositing a conductive liner of the second dual damascene conductive structure directly on a conductive liner of the first dual damascene conductive structure.
19. The method of claim 16 , wherein forming the first dual damascene conductive structure comprises:
forming a polymer-filled through-via extending through the first interconnect structure and the substrate; and
replacing the polymer-filled through-via with a metal-filled through-via.
20. The method of claim 16 , further comprising forming a polymer-filled dual damascene structure on the second interconnect structure prior to forming the second dual damascene conductive structure.