IP Library › Granted Patent US 12,415,824
Granted Patent B2
US 12,415,824 · App. 18/232,421 · Granted Sep 16, 2025

Molybdenum(0) precursors for deposition of molybdenum films

Inventors: Chandan Kr Barik (Singapore, SG); John Sudijono (Singapore, SG); Chandan Das (Singapore, SG); Doreen Wei Ying Yong (Singapore, SG); Mark Saly (Santa Clara, CA); Bhaskar Jyoti Bhuyan (San Jose, CA); Feng Q. Liu (San Jose, CA)
Assignee: Applied Materials, Inc.
C07F11/005C23C16/0272C23C16/18C23C16/4408C23C16/45527C23C16/45553C23C16/56C23C16/0209C23C16/0227
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Quick Facts
Patent No.
US 12,415,824
App. No.
18/232,421
Granted
Sep 16, 2025
Kind
B2
Abstract

Molybdenum(0) and coordination complexes are described. Methods for depositing molybdenum-containing films on a substrate are described. The substrate is exposed to a molybdenum precursor and a reactant to form the molybdenum-containing film (e.g., elemental molybdenum, molybdenum oxide, molybdenum carbide, molybdenum silicide, molybdenum disulfide, molybdenum nitride). The exposures can be sequential or simultaneous.

Claims (21)

1. A method of depositing a film, the method comprising:

exposing a substrate to a molybdenum(0) precursor having a structure selected from the group consisting of:

Mo(CO) n (CNMe) (6-n) wherein n is from 1 to 3, Mo(CO) n (Py) (6-n) wherein n is from 1 to 3, Mo(CO) n (SMe 2 ) (6-n) wherein n is from 1 to 3,

 wherein n is from 1 to 3 and L is selected from the group consisting of a 2n-electron donor neutral monodentate ligand, a 2n-electron donor neutral bidentate ligand, a 2n-electron donor neutral tridentate ligand, and combinations thereof; and

exposing the substrate to a reactant to form a molybdenum-containing film on a substrate surface, the molybdenum-containing film substantially free of halogen.

2. The method of claim 1 , wherein the reactant comprises one or more of an oxidizing agent and a reducing agent.

3. The method of claim 1 , wherein the molybdenum-containing film comprises one or more of a molybdenum metal (elemental Mo) film, a molybdenum oxide film, a molybdenum carbide film, a molybdenum silicide film, a molybdenum disulfide film, and a molybdenum nitride film.

4. The method of claim 1 , wherein the substrate is exposed to the molybdenum(0) precursor and the reactant sequentially.

5. The method of claim 1 , wherein the substrate is exposed to the molybdenum(0) precursor and the reactant simultaneously.

6. The method of claim 1 , further comprising purging the substrate surface of the molybdenum(0) precursor prior to exposing the substrate to the reactant.

7. The method of claim 6 , wherein purging comprises one or more of applying a vacuum or flowing a purge gas over the substrate surface.

8. The method of claim 7 , wherein the purge gas comprises one or more of nitrogen (N 2 ), helium (He), and argon (Ar).

9. A method of depositing a film, the method comprising:

forming a molybdenum-containing film in a process cycle comprising sequential exposure of a substrate to a molybdenum(0) precursor, purge gas, reactant, and purge gas, wherein the molybdenum(0) precursor has a structure

selected from the group consisting of: Mo(CO) n (CNMe) (6-n) wherein n is from 1 to 3, Mo(CO) n (Py) (6-n) wherein n is from 1 to 3, Mo(CO) n (SMe 2 ) (6-n) wherein n is from 1 to 3,

 wherein n is from 1 to 3 and L is selected from the group consisting of a 2n-electron donor neutral monodentate ligand, a 2n-electron donor neutral bidentate ligand, a 2n-electron donor neutral tridentate loand, and combinations thereof.

10. The method of claim 9 , wherein the molybdenum(0) precursor is substantially free of halogen and substantially free of a Mo—O bond.

11. The method of claim 9 , wherein purging comprises one or more of applying a vacuum or flowing a purge gas over the substrate.

12. The method of claim 11 , wherein the purge gas comprises one or more of nitrogen (N 2 ), helium (He), and argon (Ar).

13. The method of claim 1 , wherein the molybdenum(0) precursor is substantially free of halogen and substantially free of a Mo—O bond.

14. The method of claim 9 , wherein the molybdenum(0) precursor is substantially free of halogen and substantially free of a Mo—O bond.

Assignments (1)
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Aug 15, 2023
From: BARIK, CHANDAN KR; SUDIJONO, JOHN; DAS, CHANDAN; YONG, DOREEN WEI YING; SALY, MARK; BHUYAN, BHASKAR JYOTI; LIU, FENG Q.
To: APPLIED MATERIALS, INC.
Reel/Frame 064596/0552 →
Continuity (2)
Division 17236020 · Apr 21, 2021
Related Publication 20230382933A1 · Nov 30, 2023
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