Diode, power reception device and power transmission system
This diode has an undoped GaN layer 11 , an Al x Ga 1-x N layer (0<x<1) 12 thereon, a Mg-doped p-type In y Ga 1-y N layer (0<y<1) 13 having an island-like shape thereon, a metal electrode 14 thereon, an anode electrode 15 which is provided on the Al x Ga 1-x N layer 12 and which is electrically connected to the metal electrode 14 and a cathode electrode 16 which is provided on a part of the Al x Ga 1-x N layer 12 which is located on the opposite side from the anode electrode 15 with respect to the p-type In y Ga 1-y N layer 13 . In this diode, at a non-operating time, a two-dimensional electron gas 17 is formed in the undoped GaN layer 11 in the vicinity part of a hetero-interface between the Al x Ga 1-x N layer 12 and the undoped GaN layer 11 except a part below the p-type In y Ga 1-y N layer 13.
1 . A diode, comprising:
an undoped GaN layer,
an Al x Ga 1-x N layer (0<x<1) on the undoped GaN layer,
a Mg-doped p-type In y Ga 1-y N layer (0<y<1) having an island-like shape on the Al x Ga 1-x N layer,
a metal electrode which is provided on the whole surface of the p-type In y Ga 1-y N layer and which is in contact with the p-type In y Ga 1-y N layer,
an anode electrode which is provided on the Al x Ga 1-x N layer such that the anode electrode extends from the Al x Ga 1-x N layer on the metal electrode and which is electrically connected to the metal electrode; and
a cathode electrode which is provided on a part of the Al x Ga 1-x N layer which is located on the opposite side from the anode electrode with respect to the p-type In y Ga 1-y N layer,
0.1 <x <0.3
10 [nm]< t Al <40 [nm]
0.05 <y <0.25
2 [nm]< t In <20 [nm]
1×10 19 [cm −3 ]<[Mg]<1×10 21 [cm −3 ]
being satisfied when the thickness of the Al x Ga 1-x N layer is denoted as tai, the thickness of the p-type In y Ga 1-y N layer is denoted as tin and the Mg concentration of the p-type In y Ga 1-y N layer is denoted as [Mg],
a two-dimensional electron gas being formed in the undoped GaN layer in the vicinity part of a hetero-interface between the Al x Ga 1-x N layer and the undoped GaN layer except a part below the p-type In y Ga 1-y N layer and the two-dimensional electron gas being depleted to form the depletion region in the part below the p-type In y Ga 1-y N layer at a non-operating time,
0 [V]<V on <1.0 [V] being satisfied when the forward turn-on voltage is denoted as V on .
2 . The diode according to claim 1 wherein an insulating layer is provided between the edge of the metal electrode on the side of the cathode electrode and the p-type In y Ga 1-y N layer such that the insulating layer extends on a part of the Al x Ga 1-x N layer which is located between the p-type In y Ga 1-y N layer and the cathode electrode.
3 . A power reception device, comprising:
a power reception circuit for receiving a high-frequency radio wave,
the power reception circuit having a rectifier diode for converting a high-frequency radio wave into direct current,
the rectifier diode being
a diode, comprising:
an undoped GaN layer,
an Al x Ga 1-x N layer (0<x<1) on the undoped GaN layer,
a Mg-doped p-type In y Ga 1-y N layer (0<y<1) having an island-like shape on the Al x Ga 1-x N layer,
a metal electrode which is provided on the whole surface of the p-type In y Ga 1-y N layer and which is in contact with the p-type In y Ga 1-y N layer,
an anode electrode which is provided on the Al x Ga 1-x N layer such that the anode electrode extends from the Al x Ga 1-x N layer on the metal electrode and which is electrically connected to the metal electrode; and
a cathode electrode which is provided on a part of the Al x Ga 1-x N layer which is located on the opposite side from the anode electrode with respect to the p-type In y Ga 1-y N layer,
0.1 <x <0.3
10 [nm]< t Al <40 [nm]
0.05 <y <0.25
2 [nm]< t In <20 [nm]
1×10 19 [cm −3 ]<[Mg]<1×10 21 [cm −3 ]
being satisfied when the thickness of the Al x Ga 1-x N layer is denoted as t Al , the thickness of the p-type In y Ga 1-y N layer is denoted as tin and the Mg concentration of the p-type In y Ga 1-y N layer is denoted as [Mg],
a two-dimensional electron gas being formed in the undoped GaN layer in the vicinity part of a hetero-interface between the Al x Ga 1-x N layer and the undoped GaN layer except a part below the p-type In y Ga 1-y N layer and the two-dimensional electron gas being depleted to form the depletion region in the part below the p-type In y Ga 1-y N layer at a non-operating time,
0 [V]<V on <1.0 [V] being satisfied when the forward turn-on voltage is denoted as V on .
4 . A power transmission system, comprising:
a power transmission circuit for transmitting a high-frequency radio wave; and
a power reception circuit for receiving a high-frequency radio wave,
the power reception circuit having a rectifier diode for converting a high-frequency radio wave into direct current,
the rectifier diode being
a diode, comprising:
an undoped GaN layer,
an Al x Ga 1-x N layer (0<x<1) on the undoped GaN layer,
a Mg-doped p-type In y Ga 1-y N layer (0<y<1) having an island-like shape on the Al x Ga 1-x N layer,
a metal electrode which is provided on the whole surface of the p-type In y Ga 1-y N layer and which is in contact with the p-type In y Ga 1-y N layer,
an anode electrode which is provided on the Al x Ga 1-x N layer such that the anode electrode extends from the Al x Ga 1-x N layer on the metal electrode and which is electrically connected to the metal electrode; and
a cathode electrode which is provided on a part of the Al x Ga 1-x N layer which is located on the opposite side from the anode electrode with respect to the p-type In y Ga 1-y N layer,
0.1 <x <0.3
10 [nm]< t Al <40 [nm]
0.05 <y <0.25
2 [nm]< t In <20 [nm]
1×10 19 [cm −3 ]<[Mg]<1×10 21 [cm −3 ]
being satisfied when the thickness of the Al x Ga 1-x N layer is denoted as t Al , the thickness of the p-type In y Ga 1-y N layer is denoted as tin and the Mg concentration of the p-type In y Ga 1-y N layer is denoted as [Mg],
a two-dimensional electron gas being formed in the undoped GaN layer in the vicinity part of a hetero-interface between the Al x Ga 1-x N layer and the undoped GaN layer except a part below the p-type In y Ga 1-y N layer and the two-dimensional electron gas being depleted to form the depletion region in the part below the p-type In y Ga 1-y N layer at a non-operating time,
0 [V]<V on <1.0 [V] being satisfied when the forward turn-on voltage is denoted as V on .