Solid-state imaging apparatus and electronic apparatus

1. A light detecting device, comprising:

first and second pixels, each of the first and second pixels comprising:

a first photoelectric conversion region disposed above a semiconductor layer and a second photoelectric conversion region disposed in the semiconductor layer,

wherein out of the first photoelectric conversion region and the second photoelectric conversion region, one of the first photoelectric conversion region or the second photoelectric conversion region photoelectrically coverts light in a visible light region and the other of the first photoelectric conversion region or the second photoelectric conversion region photoelectrically converts light in an infrared light region;

a first filter,

wherein the first filter of the first pixel is configured to transmit a light in a predetermined wavelength region corresponding to a color component, and

wherein the first filter of the first pixel has transmission characteristics different than the first filter of the second pixel; and

a second filter configured to allow the other of the first photoelectric conversion region or the second photoelectric conversion region to receive light in a same infrared region.

2. The light detecting device according to claim 1 , wherein the first filter is a color filter.

3. The light detecting device according to claim 1 , wherein the second filter is formed above the first filter and has characteristics of transmitting light through at least two wavelength regions including a wavelength region in the visible light region and a wavelength region in the infrared region.

4. The light detecting device according to claim 1 , wherein the second filter is formed between the first photoelectric conversion region and the second photoelectric conversion region and has characteristics of transmitting light through a wavelength region at least in an infrared region.

5. The light detecting device according to claim 1 , wherein the second filter includes an inorganic film.

6. The light detecting device according to claim 1 , wherein the second filter is a multilayered filter formed by laminating a plurality of materials with different refractive indexes.

7. The light detecting device according to claim 1 , wherein the second filter is a metal thin-film filter in which a predetermined microstructural pattern is formed for a metal thin-film.

8. The light detecting device according to claim 1 , wherein each of the first and second pixels further comprises an electrode and a charge holding part.

9. The light detecting device according to claim 8 wherein the electrode is a transparent electrode.

10. The light detecting device according to claim 8 , wherein the second photoelectric conversion region is disposed between the electrode and the charge holding part and the charge holding part is electrically connected to the electrode.

11. An electronic apparatus mounting a light detecting device thereon, the light detecting device comprising:

first and second pixels, each of the first and second pixels comprising:

a first photoelectric conversion region disposed above a semiconductor layer and a second photoelectric conversion region disposed in the semiconductor layer,

wherein out of the first photoelectric conversion region and the second photoelectric conversion region, one of the first photoelectric conversion region or the second photoelectric conversion region photoelectrically coverts light in a visible light region and the other of the first photoelectric conversion region or the second photoelectric conversion region photoelectrically converts light in an infrared light region;

a first filter,

wherein the first filter of the first pixel is configured to transmit a light in a predetermined wavelength region corresponding to a color component, and

wherein the first filter of the first pixel has transmission characteristics different than the first filter of the second pixel; and

a second filter configured to allow the other of the first photoelectric conversion region or the second photoelectric conversion region to receive light in a same infrared region.

12. The electronic apparatus according to claim 11 , wherein the first filter is a color filter.

13. The electronic apparatus according to claim 11 , wherein the second filter is formed above the first filter and has characteristics of transmitting light through at least two wavelength regions including a wavelength region in the visible light region and a wavelength region in the infrared region.

14. The electronic apparatus according to claim 11 , wherein the second filter is formed between the first photoelectric conversion region and the second photoelectric conversion region and has characteristics of transmitting light through a wavelength region at least in an infrared region.

15. The electronic apparatus according to claim 11 , wherein the second filter includes an inorganic film.

16. The electronic apparatus according to claim 11 , wherein the second filter is a multilayered filter formed by laminating a plurality of materials with different refractive indexes.

17. The electronic apparatus according to claim 11 , wherein the second filter is a metal thin-film filter in which a predetermined microstructural pattern is formed for a metal thin-film.

18. The electronic apparatus according to claim 11 , wherein each of the first and second pixels further comprises an electrode and a charge holding part.

19. The electronic apparatus according to claim 18 wherein the electrode is a transparent electrode.

20. The electronic apparatus according to claim 18 , wherein the second photoelectric conversion region is disposed between the electrode and the charge holding part and the charge holding part is electrically connected to the electrode.