Backside illuminated image sensor structure including light pipe structure and manufacturing method thereof
View Patent ↗A backside illuminated image sensor structure including a pixel structure is provided. The pixel structure includes a substrate, a light sensing device, and at least one light pipe structure. The substrate includes a first surface and a second surface opposite to each other. The second surface has at least one recess. The light sensing device is located in the substrate. The light sensing device is adjacent to the first surface. The light pipe structure is located in the substrate. The light pipe structure is located directly above the light sensing device.
1 . A backside illuminated (BSI) image sensor structure, comprising a pixel structure, wherein the pixel structure comprises:
a substrate comprising a first surface and a second surface opposite to each other, wherein the second surface has at least one recess;
a light sensing device located in the substrate and adjacent to the first surface; and
at least one light pipe structure located in the substrate and located directly above the light sensing device, wherein the light pipe structure comprises:
a filling material layer located in the substrate; and
a passivation layer located between the filling material layer and the substrate.
2 . The BSI image sensor structure according to claim 1 , wherein the light pipe structure extends from the second surface toward the light sensing device.
3 . The BSI image sensor structure according to claim 1 , wherein the light pipe structure extends from the corresponding recess toward the light sensing device.
4 . The BSI image sensor structure according to claim 1 , wherein the second surface comprises an inverted pyramid array structure.
5 . The BSI image sensor structure according to claim 1 , wherein a refractive index of the light pipe structure is less than a refractive index of the substrate.
6 . The BSI image sensor structure according to claim 1 , wherein the pixel structure further comprises:
a filling layer filling the recess and connected to the light pipe structure; and
a deep trench isolation structure located in the substrate and located aside the light sensing device.
7 . The BSI image sensor structure according to claim 6 , wherein the light pipe structure, the deep trench isolation structure, and the filling layer are integrally formed.
8 . The BSI image sensor structure according to claim 6 , wherein a bottom of the deep trench isolation structure is lower than a bottom of the light pipe structure.
9 . The BSI image sensor structure according to claim 6 , wherein a refractive index of the deep trench isolation structure is less than a refractive index of the substrate.
10 . The BSI image sensor structure according to claim 1 , wherein the pixel structure further comprises:
a device layer located on the first surface.
11 . The BSI image sensor structure according to claim 1 , wherein the pixel structure further comprises:
a color filter layer located on the second surface; and
a microlens layer located on the color filter layer.
12 . The BSI image sensor structure according to claim 1 , comprising a plurality of the pixel structures, wherein the plurality of the pixel structures have the same light pipe structure layout.
13 . The BSI image sensor structure according to claim 1 , comprising a plurality of the pixel structures, wherein the plurality of the pixel structures have different light pipe structure layouts.
14 . A manufacturing method of a BSI image sensor structure, comprising:
providing a substrate, wherein the substrate comprises a first surface and a second surface opposite to each other;
forming a light sensing device in the substrate, wherein the light sensing device is adjacent to the first surface;
forming at least one recess on the second surface; and
forming at least one light pipe structure in the substrate, wherein the light pipe structure is located directly above the light sensing device, and the light pipe structure comprises:
a first portion of a filling material layer located in the substrate; and
a first portion of a passivation layer located between the filling material layer and the substrate.
15 . The manufacturing method of the BSI image sensor structure according to claim 14 , further comprising:
forming a deep trench isolation structure in the substrate, wherein the deep trench isolation structure is located aside the light sensing device; and
forming a filling layer in the recess, wherein the filling layer is connected to the light pipe structure.
16 . The manufacturing method of the BSI image sensor structure according to claim 15 , wherein a method of forming the light pipe structure, the deep trench isolation structure, and the filling layer comprises:
forming at least one first opening in the substrate, wherein the first opening is located directly above the light sensing device and is connected to the recess;
forming a second opening in the substrate, wherein the second opening is located aside the light sensing device; and
forming the filling material layer on the second surface, wherein the filling material layer fills the first opening, the second opening, and the recess, the light pipe structure comprises the first portion of the filling material layer located in the first opening, the deep trench isolation structure comprises a second portion of the filling material layer located in the second opening, and the filling layer comprises a third portion of the filling material layer located in the recess.
17 . The manufacturing method of the BSI image sensor structure according to claim 16 , further comprising:
performing a planarization process on the filling material layer.
18 . The manufacturing method of the BSI image sensor structure according to claim 16 , wherein the method of forming the light pipe structure, the deep trench isolation structure, and the filling layer further comprises:
conformally forming the passivation layer on the second surface, wherein the filling material layer is formed on the passivation layer, the light pipe structure further comprises the first portion of the passivation layer located in the first opening, the deep trench isolation structure further comprises a second portion of the passivation layer located in the second opening, and the filling layer further comprises a third portion of the passivation layer located in the recess.
19 . The manufacturing method of the BSI image sensor structure according to claim 14 , further comprising:
forming a device layer on the first surface;
forming a color filter layer on the second surface; and
forming a microlens layer on the color filter layer.