Semiconductor package structure
A semiconductor package structure includes a substrate, a dummy conductive mesh structure, an interposer, an underfill material, and a semiconductor die. The substrate includes a wiring structure in dielectric layers. The dummy conductive mesh structure is embedded in the substrate and is spaced apart from the wiring structure by the dielectric layers. The interposer is disposed over the substrate. The underfill material extends between the substrate and the interposer and over the dummy conductive mesh structure. The semiconductor die is disposed over the interposer and is electrically coupled to the wiring structure through the interposer.
1 . A semiconductor package structure, comprising:
a substrate comprising a wiring structure in dielectric layers;
a dummy conductive mesh structure embedded in the substrate and spaced apart from the wiring structure by the dielectric layers, wherein a top surface of the dummy conductive mesh structure is above a topmost surface of the wiring structure;
an interposer disposed over the substrate;
an underfill material extending between the substrate and the interposer and over the dummy conductive mesh structure; and
a semiconductor die disposed over the interposer and electrically coupled to the wiring structure through the interposer.
2 . The semiconductor package structure as claimed in claim 1 , wherein the dummy conductive mesh structure partially overlaps a corner of the interposer when viewed in a direction that is substantially perpendicular to a top surface of the substrate.
3 . The semiconductor package structure as claimed in claim 1 , further comprising a plurality of dummy conductive mesh structures embedded in the substrate and partially overlapping each corner of the interposer when viewed in a direction that is substantially perpendicular to a top surface of the substrate.
4 . The semiconductor package structure as claimed in claim 1 , wherein the dummy conductive mesh structure comprises metal.
5 . The semiconductor package structure as claimed in claim 1 , further comprising a conductive ring surrounding the dummy conductive mesh structure and spaced apart from the wiring structure by the dielectric layers.
6 . The semiconductor package structure as claimed in claim 1 , wherein the substrate comprises a package core disposed below the dummy conductive mesh structure.
7 . The semiconductor package structure as claimed in claim 1 , further comprising a plurality of bump structures electrically coupling the interposer to the wiring structure, wherein the underfill material extends between the dummy conductive mesh structure and the plurality of bump structures.
8 . The semiconductor package structure as claimed in claim 1 , further comprising a frame attached to the substrate through an adhesive layer.
9 . A semiconductor package structure, comprising:
a substrate comprising a wiring structure in inter-metal dielectric layers;
a plurality of dummy conductive structures extending below a top surface of the substrate and spaced apart from the wiring structure by the inter-metal dielectric layers, wherein a top surface of the plurality of dummy conductive structures is above a topmost surface of the wiring structure;
an underfill material covering the plurality of dummy conductive structures;
an interposer disposed over the substrate and electrically coupled to the wiring structure, wherein the interposer partially overlaps the plurality of dummy conductive structures in a top view; and
a semiconductor die disposed over the interposer and electrically coupled to the interposer.
10 . The semiconductor package structure as claimed in claim 9 , further comprising a molding material disposed over the interposer and surrounding the semiconductor die.
11 . The semiconductor package structure as claimed in claim 10 , wherein a sidewall of the molding material is substantially coplanar with a sidewall of the interposer.
12 . The semiconductor package structure as claimed in claim 10 , further comprising a plurality of bump structures surrounded by the molding material and electrically coupling the semiconductor die to the interposer.
13 . The semiconductor package structure as claimed in claim 9 , wherein each of the plurality of dummy conductive structures partially overlaps a corner of the interposer in the top view.
14 . The semiconductor package structure as claimed in claim 9 , wherein the plurality of dummy conductive structures and the wiring structure are formed of a same material.
15 . The semiconductor package structure as claimed in claim 9 , wherein the plurality of dummy conductive structures have a quadrilateral shape in the top view and have a dimension in a range of about 50 μm to about 300 μm.
16 . The semiconductor package structure as claimed in claim 9 , wherein the plurality of dummy conductive structures have an elliptical shape in the top view and have a dimension in a range of about 50 μm to about 300 μm.
17 . A semiconductor package structure, comprising:
a substrate comprising a wiring structure in inter-metal dielectric layers;
a dummy metal structure disposed in the inter-metal dielectric layers, wherein a top surface of the dummy metal structure is above a topmost surface of the wiring structure;
an interposer disposed over the dummy metal structure;
a plurality of bump structures adjacent to the dummy metal structure and electrically coupling the interposer to the wiring structure;
a semiconductor die disposed over the interposer and electrically coupled to the interposer; and
an underfill material surrounding the plurality of bump structures and covering the dummy metal structure.
18 . The semiconductor package structure as claimed in claim 17 , wherein a portion of the wiring structure extends below a bottom surface of the dummy metal structure.
19 . The semiconductor package structure as claimed in claim 17 , wherein in a top view, a first edge of the dummy metal structure is covered by the interposer, and a second edge of the dummy metal structure is outside of the interposer.
20 . The semiconductor package structure as claimed in claim 19 , wherein the underfill material covers the first edge and the second edge of the dummy metal structure in the top view.