Estimating peak source current using memory die substrate temperature detection
Embodiments of the present technology provide a memory die that estimates ICC peak using cost effective (and small area) on-memory die components and processing circuitry. The memory die leverages a temperature sensor to estimate a temperature rise for a substrate region of the memory die located proximate to a wordline ramp up pump during a wordline ramp up process performed before a read operation. Based on the estimated temperature rise for the substrate region, the memory die can determine that an ICC peak of the memory die deviates from a target ICC peak value—and adjust parameters of the wordline ramp up process in a manner that brings the ICC peak of the memory die closer to the target ICC peak value.
1 . A method comprising:
estimating, during a wordline ramp up process, a temperature rise for a substrate region of a memory die located proximate to a wordline ramp up pump that drives the wordline ramp up process;
calculating a peak source current (ICC peak) of the memory die by applying a temperature-to-current coefficient for the substrate region to the estimated temperature rise;
determining that the ICC peak deviates from a target ICC peak value; and
adjusting parameters of the wordline ramp up process based on the determination.
2 . The method of claim 1 , wherein adjusting the parameters of the wordline ramp up process based on the determination comprises:
in response to determining the ICC peak exceeds the target ICC peak value, reducing a ramp up rate of the wordline ramp up pump; and
in response to determining the ICC peak is less than the target ICC peak value, increasing the ramp up rate of the wordline ramp up pump.
3 . The method of claim 1 , further comprising:
estimating the temperature-to-current coefficient for the substrate region by estimating a calibration temperature rise for the substrate region when a known current is applied through the substrate region.
4 . The method of claim 1 , wherein estimating the temperature rise comprises:
using a temperature sensor to estimate a minimum and maximum temperature of the substrate region during the wordline ramp up process.
5 . The method of claim 4 , further comprising:
enabling the temperature sensor prior to the wordline ramp up process; and
disabling the temperature sensor after the wordline ramp up process.
6 . The method of claim 1 , wherein the wordline ramp up process is performed before a read operation.
7 . The method of claim 1 , wherein a maximum current consumed by the wordline ramp up pump during the wordline ramp up process approximates the ICC peak.
8 . A memory die, comprising:
a wordline ramp up pump that drives a wordline ramp up process; and
a processor operative to:
estimate, during the wordline ramp up process, a temperature rise for a substrate region of the memory die located proximate to the wordline ramp up pump from two or more temperature measurements by a temperature sensor in the substrate region;
determine that a peak source current (ICC peak) of the memory die deviates from a target ICC peak value based on applying a temperature-to-current coefficient for the substrate region to the estimated temperature rise; and
adjust parameters of the wordline ramp up process based on the determination.
9 . The memory die of claim 8 , wherein adjusting the parameters of the wordline ramp up process based on the determination comprises:
in response to determining the ICC peak exceeds the target ICC peak value, reducing a ramp up rate of the wordline ramp up pump; and
in response to determining the ICC peak is less than the target ICC peak value, increasing the ramp up rate of the wordline ramp up pump.
10 . The memory die of claim 8 , wherein the processor is further operative to:
Estimate the temperature-to-current coefficient for the substrate region by estimating a calibration temperature rise for the substrate region when a known current is applied through the substrate region.
11 . The memory die of claim 8 , further comprising a temperature sensor located at the substrate region, wherein estimating the temperature rise comprises:
using the temperature sensor to estimate a minimum and maximum temperature of the substrate region during the wordline ramp up process.
12 . The memory die of claim 11 , wherein the processor is further operative to:
enable the temperature sensor prior to the wordline ramp up process; and
disable the temperature sensor after the wordline ramp up process.
13 . The memory die of claim 8 , wherein the wordline ramp up process is performed before a read operation.
14 . The memory die of claim 8 , wherein a maximum current consumed by the wordline ramp up pump during the wordline ramp up process approximates the ICC peak.
15 . A memory die comprising:
a wordline ramp up pump that drives a wordline ramp up process; and
a processor operative to:
estimate, during the wordline ramp up process, a temperature rise for a substrate region of the memory die located proximate to the wordline ramp up pump;
in response to determining a peak source current (ICC peak) of the memory die exceeds a target ICC peak value based on applying a temperature-to-current coefficient for the substrate region to the estimated temperature rise, reduce a ramp rate of the wordline ramp up pump; and
in response to determining the ICC peak is less than the target ICC peak value based on applying the temperature-to-current coefficient for the substrate region to the estimated temperature rise, increase the ramp rate of the wordline ramp up pump.
16 . The memory die of claim 15 , wherein the processor is further operative to:
estimate the temperature-to-current coefficient for the substrate region by estimating a calibration temperature rise for the substrate region when a known current is applied through the substrate region.
17 . The memory die of claim 15 , further comprising a temperature sensor located at the substrate region, wherein estimating the temperature rise comprises:
using the temperature sensor to estimate a minimum and maximum temperature of the substrate region during the wordline ramp up process.
18 . The memory die of claim 17 , wherein the processor is further operative to:
enable the temperature sensor prior to the wordline ramp up process; and
disable the temperature sensor after the wordline ramp up process.
19 . The memory die of claim 15 , wherein the wordline ramp up process is performed before a read operation.
20 . The memory die of claim 15 , wherein a maximum current consumed by the wordline ramp up pump during the wordline ramp up process approximates the ICC peak.