System and method for valid window maximization in toggle mode link using systematic skew addition to compensate for SSO and crosstalk
Embodiments of the disclosed technology relate to the operation of devices including memory devices, and more particularly to valid window maximization in a toggle mode (TM) or Open NAND Flash Interface (ONFI) link using systematic skew while compensating for simultaneous switching outputs (SSO) and cross talk.
1. A device, comprising:
a first circuit and at least one second circuit that communicate with each other through a parallel interface, wherein the first circuit is configured to transfer data signals (DQ signals) to the at least one second circuit over one or more data lines of the parallel interface; and
a control circuit, configured to, for each respective second circuit:
calculate a valid window of each DQ signal transferred to the respective second circuit;
identify from the DQ signals one or more critical signals having a smallest valid window plus a valid window margin;
store the one or more critical signals in a Critical Timing (CT) bucket;
store other DQ signals in a Relaxed Timing (RT) bucket;
skew the one or more critical signals stored in the CT bucket by a skew amount together;
continue to skew and measure the valid windows of the one or more critical signals until a maximum valid window is obtained;
store skew tap settings with the maximum valid window for write training taps for a respective second circuit; and
derive DQS tap settings based on the respective valid windows of the one or more critical signals stored in the CT bucket.
2. A memory device comprising the device of claim 1 , wherein the first circuit is a storage controller, the second circuit is a memory die, and the parallel interface is a memory interface.
3. The device of claim 1 , wherein a number of the one or more critical signals is 1 or 2.
4. The device of claim 1 , wherein the skew amount is +1 tap.
5. The memory device of claim 2 , wherein the memory device is a non-volatile memory.
6. The memory device of claim 2 , wherein the memory device is a volatile memory.
7. The memory device of claim 2 , wherein the control circuit is in the storage controller.
8. The device of claim 1 , wherein the parallel interface is one of a Toggle Mode (TM) link, a Toggle NAND 2.0, or an Open NAND Flash Interface (ONFI).
9. A non-transitory computer-readable storage medium comprising instructions executable by a processor, the instructions programming the processor to control a first circuit and at least one second circuit that communicate with each other through a parallel interface, wherein the first circuit is configured to transfer data signals (DQ signals) and strobe signals (DQS) to the at least one second circuit over one or more data lines of the parallel interface, the instructions programming the processor to, for each respective second circuit:
calculate a valid window of each DQ signal transferred to the respective second circuit;
identify from the DQ signals at least one critical signal having a smallest valid window;
set a reference valid window to the smallest valid window;
determine whether each respective valid window satisfies a condition of being less than the reference valid window plus a valid window margin;
when a respective valid window satisfies the condition, store the DQ signal corresponding to the respective valid window in a Critical Timing (CT) bucket;
when the respective valid window does not satisfy the condition, store the DQ signal corresponding to the respective valid window in a Relaxed Timing (RT) bucket;
skew each DQ signal placed in the CT bucket by a skew amount together and measure the valid window of the respective DQ signal again;
when the valid window after the respective DQ signal is skewed is equal to an initial valid window of the respective DQ signal, store the valid window as a maximum valid window;
store skew tap settings with the maximum valid window for write training taps for a respective second circuit; and
derive DQS tap settings based on the respective valid windows of the one or more DQ signals stored in the CT bucket.
10. The non-transitory computer-readable storage medium of claim 9 , wherein the first circuit is a storage controller, the second circuit is a memory die, and the parallel interface is a memory interface.
11. The non-transitory computer-readable storage medium of claim 9 , wherein a number of the one or more critical signals is 1 or 2.
12. The non-transitory computer-readable storage medium of claim 9 , wherein the skew amount is +1 tap.
13. A non-volatile memory device comprising the non-transitory computer-readable storage medium of claim 9 .
14. The non-transitory computer-readable storage medium of claim 9 , wherein the parallel interface is one of a Toggle Mode (TM) link, a Toggle NAND 2.0, or an Open NAND Flash Interface (ONFI).
15. The non-transitory computer-readable storage medium of claim 9 , wherein the valid window margin is approximately 50 ps.
16. The device of claim 1 , wherein the valid window margin is approximately 50 ps.
17. A method for operating a device comprising a first circuit and at least one second circuit that communicate with each other through a parallel interface, wherein the first circuit is configured to transfer data signals (DQ signals) and strobe signals (DQS) to the at least one second circuit over one or more data lines of the parallel interface, the method comprising:
calculating a valid window of each DQ signal transferred to a respective second circuit;
identifying from the DQ signals one or more critical signals having a smallest valid window plus a valid window margin;
storing the one or more critical signals in a Critical Timing (CT) bucket;
storing other DQ signals in a Relaxed Timing (RT) bucket;
skewing the one or more critical signals stored in the CT bucket by a skew amount together;
continuing to skew and measure the valid window of the one or more critical signals until a maximum valid window is obtained;
storing skew tap settings with the maximum valid window for the one or more critical signals for write training taps for a respective second circuit; and
deriving DQS tap settings based on the respective valid windows of the one or more critical signals stored in the CT bucket.
18. The method of claim 17 , wherein the skew amount is +1 tap.
19. The method of claim 17 , wherein the device is a memory device, the first circuit is a storage controller, the second circuit is a memory die, and the parallel interface is a memory interface.
20. The method of claim 17 , wherein the parallel interface is one of a Toggle Mode (TM) link, a Toggle NAND 2.0, or an Open NAND Flash Interface (ONFI).